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Results: 1-9 |
Results: 9
HOT-CARRIER RELIABILITY IN N-MOSFETS USED AS PASS-TRANSISTORS
Authors: GOGUENHEIM D BRAVAIX A VUILLAUME D VARROT M REVIL N MORTINI P
Citation: D. Goguenheim et al., HOT-CARRIER RELIABILITY IN N-MOSFETS USED AS PASS-TRANSISTORS, Microelectronics and reliability, 38(4), 1998, pp. 539-544
HOT-CARRIER INJECTIONS IN SIO2
Authors: VUILLAUME D BRAVAIX A GOGUENHEIM D
Citation: D. Vuillaume et al., HOT-CARRIER INJECTIONS IN SIO2, Microelectronics and reliability, 38(1), 1998, pp. 7-22
A COUPLED I(V) AND CHARGE-PUMPING ANALYSIS OF STRESS-INDUCED LEAKAGE CURRENTS IN 5NM-THICK GATE OXIDES
Authors: GOGUENHEIM D BRAVAIX A VUILLAUME D MONDON F CANDELIER P JOURDAIN M MEINERTZHAGEN A
Citation: D. Goguenheim et al., A COUPLED I(V) AND CHARGE-PUMPING ANALYSIS OF STRESS-INDUCED LEAKAGE CURRENTS IN 5NM-THICK GATE OXIDES, Microelectronic engineering, 36(1-4), 1997, pp. 141-144
INFLUENCES OF THE DIFFERENT DEGRADATION MECHANISMS IN AC-STRESSED P-MOSFETS DURING PASS TRANSISTOR OPERATION
Authors: BRAVAIX A GOGUENHEIM D VUILLAUME D REVIL N VARROT M MORTINI P
Citation: A. Bravaix et al., INFLUENCES OF THE DIFFERENT DEGRADATION MECHANISMS IN AC-STRESSED P-MOSFETS DURING PASS TRANSISTOR OPERATION, Microelectronic engineering, 36(1-4), 1997, pp. 305-308
ANALYSIS OF THE HOT-CARRIER DEGRADATION OF DEEP-SUBMICROMETER LARGE-ANGLE-TILT-IMPLANTED DRAIN (LATID) MOSFETS
Authors: BRAVAIX A VUILLAUME D
Citation: A. Bravaix et D. Vuillaume, ANALYSIS OF THE HOT-CARRIER DEGRADATION OF DEEP-SUBMICROMETER LARGE-ANGLE-TILT-IMPLANTED DRAIN (LATID) MOSFETS, Solid-state electronics, 41(9), 1997, pp. 1293-1301
HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS
Authors: VUILLAUME D BRAVAIX A GOGUENHEIM D MARCHETAUX JC BOUDOU A
Citation: D. Vuillaume et al., HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1473-1474
IMPROVED HOT-CARRIER IMMUNITY OF P-MOSFETS WITH 8NM THICK NITRIDED GATE-OXIDE DURING BIDIRECTIONAL STRESSING
Authors: BRAVAIX A VUILLAUME D GOGUENHEIM D DORVAL D HAOND M
Citation: A. Bravaix et al., IMPROVED HOT-CARRIER IMMUNITY OF P-MOSFETS WITH 8NM THICK NITRIDED GATE-OXIDE DURING BIDIRECTIONAL STRESSING, Microelectronic engineering, 28(1-4), 1995, pp. 273-276
DAMAGE-INDUCED BY CARRIER INJECTION IN 8 NM THICK OXIDES AND NITRIDEDOXIDES
Authors: BRAVAIX A VUILLAUME D THIRION V DORVAL D STRABONI A
Citation: A. Bravaix et al., DAMAGE-INDUCED BY CARRIER INJECTION IN 8 NM THICK OXIDES AND NITRIDEDOXIDES, Journal of non-crystalline solids, 187, 1995, pp. 365-368
LIFETIME PREDICTION METHODS FOR P-MOSFETS - A COMPARATIVE-STUDY OF STANDARD AND CHARGE-PUMPING LIFETIME CRITERIA
Authors: BRAVAIX A VUILLAUME D
Citation: A. Bravaix et D. Vuillaume, LIFETIME PREDICTION METHODS FOR P-MOSFETS - A COMPARATIVE-STUDY OF STANDARD AND CHARGE-PUMPING LIFETIME CRITERIA, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 101-108
Risultati: 1-9 |