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Results:
1-8
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Results: 8
Authors:
THEWES R
BROX M
GOSER KF
WEBER W
Citation: R. Thewes et al., HOT-CARRIER DEGRADATION OF P-MOSFETS UNDER ANALOG OPERATION, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 607-617
Authors:
WEBER W
BROX M
THEWES R
SAKS NS
Citation: W. Weber et al., HOT-HOLE INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS - REPLY, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1474-1477
Authors:
WEBER W
BROX M
THEWES R
SAKS NS
Citation: W. Weber et al., HOT-HOLE-INDUCED NEGATIVE OXIDE CHARGES IN N-MOSFETS, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1473-1480
Authors:
BROX M
WEBER W
Citation: M. Brox et W. Weber, HOLE KINETICS IN METAL-OXIDE-SEMICONDUCTOR OXIDES INVESTIGATED BY A HOT-CARRIER DEGRADATION EXPERIMENT, Journal of applied physics, 75(8), 1994, pp. 4046-4054
Authors:
BROX M
SCHWERIN A
WANG Q
WEBER W
Citation: M. Brox et al., A MODEL FOR THE TIME-DEPENDENCE AND BIAS-DEPENDENCE OF P-MOSFET DEGRADATION, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1184-1196
Authors:
WEBER W
BROX M
Citation: W. Weber et M. Brox, PHYSICAL-PROPERTIES OF SIO2 AND ITS INTERFACE TO SILICON IN MICROELECTRONIC APPLICATIONS, MRS bulletin, 18(12), 1993, pp. 36-42
Authors:
WEBER W
BROX M
VONSCHWERIN A
THEWES R
Citation: W. Weber et al., HOT-CARRIER STRESS EFFECTS IN P-MOSFETS - PHYSICAL EFFECTS RELEVANT FOR CIRCUIT OPERATION, Microelectronic engineering, 22(1-4), 1993, pp. 253-260
Authors:
WEBER W
BROX M
Citation: W. Weber et M. Brox, DYNAMIC EFFECTS IN HOT-CARRIER DEGRADATION RELEVANT FOR CMOS OPERATION, Microelectronics and reliability, 33(11-12), 1993, pp. 1729-1736
Risultati:
1-8
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