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Results: 1-20 |
Results: 20
CHARGE INJECTION USING GATE-INDUCED-DRAIN-LEAKAGE CURRENT FOR CHARACTERIZATION OF PLASMA EDGE DAMAGE IN CMOS DEVICES
Authors: BROZEK T RAO VR SRIDHARAN A WERKING JD CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., CHARGE INJECTION USING GATE-INDUCED-DRAIN-LEAKAGE CURRENT FOR CHARACTERIZATION OF PLASMA EDGE DAMAGE IN CMOS DEVICES, IEEE transactions on semiconductor manufacturing, 11(2), 1998, pp. 211-216
GATE OXIDE LEAKAGE DUE TO TEMPERATURE ACCELERATED DEGRADATION UNDER PLASMA CHARGING CONDITIONS
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., GATE OXIDE LEAKAGE DUE TO TEMPERATURE ACCELERATED DEGRADATION UNDER PLASMA CHARGING CONDITIONS, Microelectronics and reliability, 38(1), 1998, pp. 73-79
INCREASED HOLE TRAPPING IN GATE OXIDES AS LATENT DAMAGE FROM PLASMA CHARGING
Authors: BROZEK T VISWANATHAN CR
Citation: T. Brozek et Cr. Viswanathan, INCREASED HOLE TRAPPING IN GATE OXIDES AS LATENT DAMAGE FROM PLASMA CHARGING, Semiconductor science and technology, 12(12), 1997, pp. 1551-1558
OXIDE THICKNESS DEPENDENCE OF HOLE TRAP GENERATION IN MOS STRUCTURES UNDER HIGH-FIELD ELECTRON INJECTION
Authors: BROZEK T LUM EB VISWANATHAN CR
Citation: T. Brozek et al., OXIDE THICKNESS DEPENDENCE OF HOLE TRAP GENERATION IN MOS STRUCTURES UNDER HIGH-FIELD ELECTRON INJECTION, Microelectronic engineering, 36(1-4), 1997, pp. 161-164
POLARITY DEPENDENCE OF CUMULATIVE PROPERTIES OF CHARGE-TO-BREAKDOWN IN VERY THIN GATE OXIDES
Authors: BROZEK T SZYPER EC VISWANATHAN CR
Citation: T. Brozek et al., POLARITY DEPENDENCE OF CUMULATIVE PROPERTIES OF CHARGE-TO-BREAKDOWN IN VERY THIN GATE OXIDES, Solid-state electronics, 41(7), 1997, pp. 995-999
EVALUATION OF PLASMA DAMAGE USING FULLY PROCESSED METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: LI XY BROZEK T PREUNINGER F CHAN D VISWANATHAN CR
Citation: Xy. Li et al., EVALUATION OF PLASMA DAMAGE USING FULLY PROCESSED METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 571-576
COMPARISON OF DAMAGE CREATED BY A CHEMICAL DOWNSTREAM ETCHER AND PLASMA-IMMERSION SYSTEM IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: BROZEK T DAO T VISWANATHAN CR
Citation: T. Brozek et al., COMPARISON OF DAMAGE CREATED BY A CHEMICAL DOWNSTREAM ETCHER AND PLASMA-IMMERSION SYSTEM IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 577-581
HOLE TRAP GENERATION IN THE GATE OXIDE DUE TO PLASMA-INDUCED CHARGING
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., HOLE TRAP GENERATION IN THE GATE OXIDE DUE TO PLASMA-INDUCED CHARGING, IEEE electron device letters, 17(9), 1996, pp. 440-442
TEMPERATURE ACCELERATED GATE OXIDE DEGRADATION UNDER PLASMA-INDUCED CHARGING
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., TEMPERATURE ACCELERATED GATE OXIDE DEGRADATION UNDER PLASMA-INDUCED CHARGING, IEEE electron device letters, 17(6), 1996, pp. 288-290
THRESHOLD VOLTAGE DEGRADATION IN PLASMA-DAMAGED CMOS TRANSISTORS - ROLE OF ELECTRON AND HOLE TRAPS RELATED TO CHARGING DAMAGE
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., THRESHOLD VOLTAGE DEGRADATION IN PLASMA-DAMAGED CMOS TRANSISTORS - ROLE OF ELECTRON AND HOLE TRAPS RELATED TO CHARGING DAMAGE, Microelectronics and reliability, 36(11-12), 1996, pp. 1627-1630
SIMPLE METHOD FOR EVALUATING PROCESS-INDUCED CHARGING DAMAGE TO THE GATE OXIDE OF METAL-OXIDE-SEMICONDUCTOR DEVICES
Authors: BROZEK T VISWANATHAN CR
Citation: T. Brozek et Cr. Viswanathan, SIMPLE METHOD FOR EVALUATING PROCESS-INDUCED CHARGING DAMAGE TO THE GATE OXIDE OF METAL-OXIDE-SEMICONDUCTOR DEVICES, Applied physics letters, 69(12), 1996, pp. 1770-1772
GENERATION OF HOLE TRAPS IN THIN SILICON-OXIDE LAYERS UNDER HIGH-FIELD ELECTRON INJECTION
Authors: BROZEK T VISWANATHAN CR
Citation: T. Brozek et Cr. Viswanathan, GENERATION OF HOLE TRAPS IN THIN SILICON-OXIDE LAYERS UNDER HIGH-FIELD ELECTRON INJECTION, Applied physics letters, 68(13), 1996, pp. 1826-1828
A MODEL FOR THRESHOLD VOLTAGE SHIFT UNDER POSITIVE AND NEGATIVE-HIGH-FIELD ELECTRON INJECTION IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) TRANSISTORS
Authors: BROZEK T CHAN YD VISWANATHAN CR
Citation: T. Brozek et al., A MODEL FOR THRESHOLD VOLTAGE SHIFT UNDER POSITIVE AND NEGATIVE-HIGH-FIELD ELECTRON INJECTION IN COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) TRANSISTORS, JPN J A P 1, 34(2B), 1995, pp. 969-972
ANOMALOUS DEGRADATION OF MOS STRUCTURES IN SUBSTRATE HOT-ELECTRON INJECTION EXPERIMENTS
Authors: BROZEK T HAHN D VISWANATHAN CR
Citation: T. Brozek et al., ANOMALOUS DEGRADATION OF MOS STRUCTURES IN SUBSTRATE HOT-ELECTRON INJECTION EXPERIMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 337-340
EFFECT OF RADIATION ON BREAKDOWN OF ELECTRICALLY PRE-DEGRADED OXIDES IN MOS STRUCTURES
Authors: BROZEK T WISNIEWSKI R BECK RB JAKUBOWSKI A
Citation: T. Brozek et al., EFFECT OF RADIATION ON BREAKDOWN OF ELECTRICALLY PRE-DEGRADED OXIDES IN MOS STRUCTURES, Microelectronic engineering, 28(1-4), 1995, pp. 349-352
RADIATION PROPERTIES OF SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ZINC-DOPED OXIDES
Authors: BROZEK T DIDENKO PI KIBLIK VY LOGUSH OI LITOVCHENKO VG ROMANOVA GF
Citation: T. Brozek et al., RADIATION PROPERTIES OF SILICON METAL-OXIDE-SEMICONDUCTOR STRUCTURES WITH ZINC-DOPED OXIDES, JPN J A P 1, 33(10), 1994, pp. 5823-5828
ELECTRICAL BEHAVIOR AND BREAKDOWN IN PLASMA-DEPOSITED CUBIC BN LAYERS
Authors: BROZEK T SZMIDT J JAKUBOWSKI A OLSZYNA A
Citation: T. Brozek et al., ELECTRICAL BEHAVIOR AND BREAKDOWN IN PLASMA-DEPOSITED CUBIC BN LAYERS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 720-724
CHARGE BUILDUP AND OXIDE WEAR-OUT DURING FOWLER-NORDHEIM ELECTRON INJECTION IN IRRADIATED MOS STRUCTURES
Authors: BROZEK T JAKUBOWSKI A
Citation: T. Brozek et A. Jakubowski, CHARGE BUILDUP AND OXIDE WEAR-OUT DURING FOWLER-NORDHEIM ELECTRON INJECTION IN IRRADIATED MOS STRUCTURES, Microelectronics, 25(7), 1994, pp. 507-514
EFFECT OF CARBON ON THERMAL-OXIDATION OF SILICON AND ELECTRICAL-PROPERTIES OF SIO2-SI STRUCTURES
Authors: BECK RB BROZEK T RUZYLLO J HOSSAIN SD TRESSLER RE
Citation: Rb. Beck et al., EFFECT OF CARBON ON THERMAL-OXIDATION OF SILICON AND ELECTRICAL-PROPERTIES OF SIO2-SI STRUCTURES, Journal of electronic materials, 22(6), 1993, pp. 689-694
DIELECTRIC INTEGRITY OF THIN THERMAL OXIDES ON SILICON
Authors: BROZEK T JAKUBOWSKI A
Citation: T. Brozek et A. Jakubowski, DIELECTRIC INTEGRITY OF THIN THERMAL OXIDES ON SILICON, Microelectronics and reliability, 33(11-12), 1993, pp. 1637-1656
Risultati: 1-20 |