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Results: 1-18 |

Results: 18

OPTICAL-PROPERTIES OF STEPPED INXGA1-XAS GAAS QUANTUM-WELLS/

Authors: DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SCHIUMARINI D SIMEONE MG

Citation: A. Dandrea et al., OPTICAL-PROPERTIES OF STEPPED INXGA1-XAS GAAS QUANTUM-WELLS/, Microelectronic engineering, 43-4, 1998, pp. 259-263

OPTICAL-PROPERTIES OF STEPPED INXGA1-XAS GAAS QUANTUM-WELLS/

Authors: DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SCHIUMARINI D SIMEONE MG

Citation: A. Dandrea et al., OPTICAL-PROPERTIES OF STEPPED INXGA1-XAS GAAS QUANTUM-WELLS/, Journal of applied physics, 83(12), 1998, pp. 7920-7928

2ND-HARMONIC GENERATION IN STEPPED INASGAAS GAAS QUANTUM-WELLS/

Authors: DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SCHIUMARINI D SIMEONE MG

Citation: A. Dandrea et al., 2ND-HARMONIC GENERATION IN STEPPED INASGAAS GAAS QUANTUM-WELLS/, Physica status solidi. a, Applied research, 164(1), 1997, pp. 383-386

INTERFACE ABRUPTNESS IN STRAINED III-V HETEROSTRUCTURES

Authors: BRUNI MR KACIULIS S MATTOGNO G RIGHINI G

Citation: Mr. Bruni et al., INTERFACE ABRUPTNESS IN STRAINED III-V HETEROSTRUCTURES, Applied surface science, 104, 1996, pp. 652-655

INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/

Authors: ROMANATO F DRIGO AV FRANCESIO L FRANZOSI P LAZZARINI L SALVIATI G MAZZER M BRUNI MR SIMEONE MG

Citation: F. Romanato et al., INVESTIGATION OF STRAIN RELAXATION MECHANISMS IN INGAAS GAAS SINGLE-LAYER FILMS/, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 491-498

RAMAN STUDIES OF INAS IN0.53GA0.47AS SINGLE QUANTUM-WELLS GROWN ON INP SUBSTRATE BY MBE/

Authors: QUAGLIANO LG SIMEONE MG BRUNI MR GAMBACORTI N ZUGARINI M

Citation: Lg. Quagliano et al., RAMAN STUDIES OF INAS IN0.53GA0.47AS SINGLE QUANTUM-WELLS GROWN ON INP SUBSTRATE BY MBE/, Superlattices and microstructures, 17(1), 1995, pp. 27-30

EXCITON-STATES IN INXGA1-XAS GAAS DOUBLE-QUANTUM WELLS - NORMALIZED REFLECTION SPECTRAL/

Authors: DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SIMEONI G

Citation: A. Dandrea et al., EXCITON-STATES IN INXGA1-XAS GAAS DOUBLE-QUANTUM WELLS - NORMALIZED REFLECTION SPECTRAL/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1423-1427

NORMALIZED REFLECTION SPECTRA IN GAAS INXGA(1-X) AS SINGLE QUANTUM-WELLS - STRUCTURE CHARACTERIZATIONS AND EXCITONIC PROPERTIES/

Authors: DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SIMEONE MG GAMBACORTI N

Citation: A. Dandrea et al., NORMALIZED REFLECTION SPECTRA IN GAAS INXGA(1-X) AS SINGLE QUANTUM-WELLS - STRUCTURE CHARACTERIZATIONS AND EXCITONIC PROPERTIES/, Physical review. B, Condensed matter, 52(15), 1995, pp. 10713-10716

NORMALIZED REFLECTION SPECTRA IN INXGA1-XAS GAAS STRAINED QUANTUM-WELLS - STRUCTURE AND ELECTRONIC-PROPERTIES/

Authors: DANDREA A TOMASSINI N FERRARI L RIGHINI M SELCI S BRUNI MR SIMEONE MG

Citation: A. Dandrea et al., NORMALIZED REFLECTION SPECTRA IN INXGA1-XAS GAAS STRAINED QUANTUM-WELLS - STRUCTURE AND ELECTRONIC-PROPERTIES/, Physica status solidi. a, Applied research, 152(1), 1995, pp. 315-322

ROLE OF THE SUBSTRATE DEOXIDATION PROCESS IN THE GROWTH OF STRAINED INAS INP HETEROSTRUCTURES/

Authors: BRUNI MR GAMBACORTI N KACIULIS S MATTOGNO G SIMEONE MG QUAGLIANO LG TOMASSINI N JUSSERAND B

Citation: Mr. Bruni et al., ROLE OF THE SUBSTRATE DEOXIDATION PROCESS IN THE GROWTH OF STRAINED INAS INP HETEROSTRUCTURES/, Journal of crystal growth, 150(1-4), 1995, pp. 123-127

DEPTH PROFILING OF INAS INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

Authors: BRUNI MR GAMBACORTI N KACIULIS S MATTOGNO G SIMEONE MG VITICOLI S

Citation: Mr. Bruni et al., DEPTH PROFILING OF INAS INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 228-231

MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM EPITAXY-GROWN INGAAS GAAS BUFFER HETEROSTRUCTURES/

Authors: FERRARI C FRANZOSI P LAZZARINI L SALVIATI G BERTI M DRIGO AV MAZZER M ROMANATO F BRUNI MR SIMEONE MG

Citation: C. Ferrari et al., MECHANISMS OF STRAIN RELEASE IN MOLECULAR-BEAM EPITAXY-GROWN INGAAS GAAS BUFFER HETEROSTRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 510-514

TRANSMISSION ELECTRON-MICROSCOPY, HIGH-RESOLUTION X-RAY-DIFFRACTION AND RUTHERFORD BACKSCATTERING STUDY OF STRAIN RELEASE IN INGAAS GAAS BUFFER LAYERS/

Authors: SALVIATI G LAZZARINI L FERRARI C FRANZOSI P MILITA S ROMANATO F BERTI M MAZZER M DRIGO AV BRUNI MR SIMEONE MG GAMBACORTI N

Citation: G. Salviati et al., TRANSMISSION ELECTRON-MICROSCOPY, HIGH-RESOLUTION X-RAY-DIFFRACTION AND RUTHERFORD BACKSCATTERING STUDY OF STRAIN RELEASE IN INGAAS GAAS BUFFER LAYERS/, Scanning microscopy, 8(4), 1994, pp. 943-955

ABOVE BARRIER EXCITON CONFINEMENT IN INGAAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/

Authors: CAPIZZI M POLIMENI A FROVA A MARTELLI F OZANYAN KB WORREN T BRUNI MR SIMEONE MG

Citation: M. Capizzi et al., ABOVE BARRIER EXCITON CONFINEMENT IN INGAAS GAAS MULTIPLE-QUANTUM-WELL STRUCTURES/, Solid-state electronics, 37(4-6), 1994, pp. 641-644

GLANCING ANGLE EXAFS INVESTIGATION OF INGAAS GAAS STRAINED-LAYER MULTIPLE-QUANTUM WELLS - STRAIN AND BOND DISTANCES/

Authors: TURCHINI S PROIETTI MG MARTELLI F ALAGNA L BRUNI MR PROSPERI T SIMEONE MG GARCIA J

Citation: S. Turchini et al., GLANCING ANGLE EXAFS INVESTIGATION OF INGAAS GAAS STRAINED-LAYER MULTIPLE-QUANTUM WELLS - STRAIN AND BOND DISTANCES/, JPN J A P 1, 32, 1993, pp. 419-421

DEPTH PROFILING OF INXGA1-XAS GAAS SUPERLATTICE/

Authors: BRUNI MR KACIULIS S MATTOGNO G SIMEONE MG VITICOLI S MARTELLI F

Citation: Mr. Bruni et al., DEPTH PROFILING OF INXGA1-XAS GAAS SUPERLATTICE/, Applied surface science, 72(1), 1993, pp. 89-93

MICROSCOPIC INVESTIGATION OF THE STRAIN DISTRIBUTION IN INGAAS GAAS QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/

Authors: PROIETTI MG MARTELLI F TURCHINI S ALAGNA L BRUNI MR PROSPERI T SIMEONE MG GARCIA J

Citation: Mg. Proietti et al., MICROSCOPIC INVESTIGATION OF THE STRAIN DISTRIBUTION IN INGAAS GAAS QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 127(1-4), 1993, pp. 592-595

ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION DETERMINATIONS OF STRAIN RELEASE IN INGAAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/

Authors: SALVIATI G FERRARI C LAZZARINI L NASI L NORMAN CE BRUNI MR SIMEONE MG MARTELLI F

Citation: G. Salviati et al., ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION DETERMINATIONS OF STRAIN RELEASE IN INGAAS GAAS SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of the Electrochemical Society, 140(8), 1993, pp. 2422-2427

Risultati: 1-18 |