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Results: 1-25 |
Results: 25
TUNABLE, STRONGLY NON PARABOLIC CONFINEMENT IN A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY EPITAXIAL REGROWTH
Authors: CINA S ARNONE DD BURROUGHES JH NORMAN CE BURKE T HUGHES HP PEPPER M RITCHIE DA
Citation: S. Cina et al., TUNABLE, STRONGLY NON PARABOLIC CONFINEMENT IN A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY EPITAXIAL REGROWTH, JPN J A P 1, 37(3B), 1998, pp. 1570-1573
MOBILITY (10(6) CM(2) V-1 S(-1)) OF 2DEGS, 30 NM FROM EX-SITU PATTERNED GAAS REGROWTH INTERFACES
Authors: BURKE TM RITCHIE DA LINFIELD EH OSULLIVAN MP BURROUGHES JH LEADBEATER ML HOLMES SN NORMAN CE SHIELDS AJ
Citation: Tm. Burke et al., MOBILITY (10(6) CM(2) V-1 S(-1)) OF 2DEGS, 30 NM FROM EX-SITU PATTERNED GAAS REGROWTH INTERFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 202-206
PLASMONS IN SPATIALLY NONUNIFORM MAGNETIC-FIELDS
Authors: CINA S ARNONE DD BURROUGHES JH HOLMES SN BURKE T HUGHES HP RITCHIE DA PEPPER M
Citation: S. Cina et al., PLASMONS IN SPATIALLY NONUNIFORM MAGNETIC-FIELDS, Physica. B, Condensed matter, 251, 1998, pp. 286-290
FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED ON (100)GAAS WITH HOLE GAS SIDEGATES ON A (311)A GAAS SUBSTRATE
Authors: CINA S ARNONE DD BURKE T BURROUGHES JH NORMAN C HUGHES HP PEPPER M RITCHIE DA
Citation: S. Cina et al., FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED ON (100)GAAS WITH HOLE GAS SIDEGATES ON A (311)A GAAS SUBSTRATE, Microelectronic engineering, 43-4, 1998, pp. 431-436
ELECTRON REFLECTION AND INTERFERENCE IN THE GAAS ALAS-AL SCHOTTKY COLLECTOR RESONANT-TUNNELING DIODE/
Authors: NORTH AJ LINFIELD EH SIMMONS MY RITCHIE DA LEADBEATER ML BURROUGHES JH FODEN CL PEPPER M
Citation: Aj. North et al., ELECTRON REFLECTION AND INTERFERENCE IN THE GAAS ALAS-AL SCHOTTKY COLLECTOR RESONANT-TUNNELING DIODE/, Physical review. B, Condensed matter, 57(3), 1998, pp. 1847-1854
SURFACE DECONTAMINATION OF PATTERNED GAAS SUBSTRATES FOR MOLECULAR-BEAM EPITAXY REGROWTH USING A HYDROGEN RADICAL SOURCE
Authors: BURKE TM QUIERIN MA GRIMSHAW MP RITCHIE DA PEPPER M BURROUGHES JH
Citation: Tm. Burke et al., SURFACE DECONTAMINATION OF PATTERNED GAAS SUBSTRATES FOR MOLECULAR-BEAM EPITAXY REGROWTH USING A HYDROGEN RADICAL SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 325-328
HYDROGEN RADICAL SURFACE CLEANING OF GAAS FOR MBE REGROWTH
Authors: BURKE TM LINFIELD EH RITCHIE DA PEPPER M BURROUGHES JH
Citation: Tm. Burke et al., HYDROGEN RADICAL SURFACE CLEANING OF GAAS FOR MBE REGROWTH, Journal of crystal growth, 175, 1997, pp. 416-421
FAR-INFRARED STUDY OF A LATERALLY CONFINED ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON A PATTERNED (100)N(-GAAS SUBSTRATE())
Authors: AMONE DD CINA S BURROUGHES JH HOLMES SN BURKE T HUGHES HP RITCHIE DA PEPPER M
Citation: Dd. Amone et al., FAR-INFRARED STUDY OF A LATERALLY CONFINED ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON A PATTERNED (100)N(-GAAS SUBSTRATE()), Applied physics letters, 71(4), 1997, pp. 497-499
ELECTRON-TRANSPORT IN A NONPLANAR 2DEG
Authors: LEADBEATER ML FODEN CL BURROUGHES JH BURKE TM WANG LL GRIMSHAW MP RITCHIE DA PEPPER M
Citation: Ml. Leadbeater et al., ELECTRON-TRANSPORT IN A NONPLANAR 2DEG, Surface science, 362(1-3), 1996, pp. 587-590
FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED ON (100)GAAS FACETS WITH HOLE GAS SIDEGATES ON A (311)A GAAS SUBSTRATE
Authors: ARNONE DD BURROUGHES JH PEPPER M NORMAN C EVANS RJ BURKE T RITCHIE DA GRIMSHAW MP
Citation: Dd. Arnone et al., FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED ON (100)GAAS FACETS WITH HOLE GAS SIDEGATES ON A (311)A GAAS SUBSTRATE, Applied physics letters, 69(13), 1996, pp. 1933-1935
EVIDENCE OF QUANTUM LATERAL CONFINEMENT IN SIDE-GATED RESONANT-TUNNELING DIODES FORMED BY PATTERNED SUBSTRATE REGROWTH
Authors: QUIERIN MA GRIMSHAW MP RITCHIE DA BURROUGHES JH LEADBEATER ML PEPPER M
Citation: Ma. Quierin et al., EVIDENCE OF QUANTUM LATERAL CONFINEMENT IN SIDE-GATED RESONANT-TUNNELING DIODES FORMED BY PATTERNED SUBSTRATE REGROWTH, Applied physics letters, 68(12), 1996, pp. 1702-1704
VARIATION OF THE CONFINEMENT POTENTIAL OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS BY LATERAL P-N-JUNCTIONS
Authors: EVANS RJ BURKE TM BURROUGHES JH GRIMSHAW MP RITCHIE DA PEPPER M
Citation: Rj. Evans et al., VARIATION OF THE CONFINEMENT POTENTIAL OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS BY LATERAL P-N-JUNCTIONS, Applied physics letters, 68(12), 1996, pp. 1708-1710
ELECTRON-TRANSPORT IN A NONUNIFORM MAGNETIC-FIELD
Authors: LEADBEATER ML FODEN CL BURKE TM BURROUGHES JH GRIMSHAW MP RITCHIE DA WANG LL PEPPER M
Citation: Ml. Leadbeater et al., ELECTRON-TRANSPORT IN A NONUNIFORM MAGNETIC-FIELD, Journal of physics. Condensed matter, 7(25), 1995, pp. 307-315
SIDE-GATED GAAS ALGAAS DOUBLE-BARRIER RESONANT-TUNNELING DIODES FORMED BY PATTERNED SUBSTRATE REGROWTH/
Authors: QUIERIN MA BURROUGHES JH GRIMSHAW MP LEADBEATER ML RITCHIE DA PEPPER M
Citation: Ma. Quierin et al., SIDE-GATED GAAS ALGAAS DOUBLE-BARRIER RESONANT-TUNNELING DIODES FORMED BY PATTERNED SUBSTRATE REGROWTH/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 198-202
A HOLE FACET WIRE FORMED BY MBE REGROWTH OVER AN EX-SITU PATTERNED GAAS SUBSTRATE
Authors: EVANS RJ BURKE TM BURROUGHES JH GRIMSHAW MP RITCHIE DA PEPPER M
Citation: Rj. Evans et al., A HOLE FACET WIRE FORMED BY MBE REGROWTH OVER AN EX-SITU PATTERNED GAAS SUBSTRATE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 203-207
MAGNETOTRANSPORT IN A NONPLANAR 2-DIMENSIONAL ELECTRON-GAS
Authors: LEADBEATER ML FODEN CL BURROUGHES JH PEPPER M BURKE TM WANG LL GRIMSHAW MP RITCHIE DA
Citation: Ml. Leadbeater et al., MAGNETOTRANSPORT IN A NONPLANAR 2-DIMENSIONAL ELECTRON-GAS, Physical review. B, Condensed matter, 52(12), 1995, pp. 8629-8632
INDEPENDENTLY CONTACTED DOUBLE-QUANTUM-WELL STRUCTURE FABRICATED BY MOLECULAR-BEAM EPITAXIAL REGROWTH
Authors: PATEL NK GRIMSHAW MP BURROUGHES JH LEADBEATER ML RITCHIE DA JONES GAC
Citation: Nk. Patel et al., INDEPENDENTLY CONTACTED DOUBLE-QUANTUM-WELL STRUCTURE FABRICATED BY MOLECULAR-BEAM EPITAXIAL REGROWTH, Applied physics letters, 66(7), 1995, pp. 848-850
ONE-DIMENSIONAL WIRE FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON APATTERNED PNPNP GAAS SUBSTRATE
Authors: BURROUGHES JH GRIMSHAW MP LEADBEATER ML RITCHIE DA PEPPER M JONES GAC
Citation: Jh. Burroughes et al., ONE-DIMENSIONAL WIRE FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON APATTERNED PNPNP GAAS SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1277-1279
QUANTUM MAGNETIC CONFINEMENT IN A CURVED 2-DIMENSIONAL ELECTRON-GAS
Authors: FODEN CL LEADBEATER ML BURROUGHES JH PEPPER M
Citation: Cl. Foden et al., QUANTUM MAGNETIC CONFINEMENT IN A CURVED 2-DIMENSIONAL ELECTRON-GAS, Journal of physics. Condensed matter, 6(10), 1994, pp. 127-134
INDEPENDENT CONTACTING TO ELECTRON LAYERS IN A DOUBLE-QUANTUM-WELL SYSTEM USING PD-GE SHALLOW OHMIC CONTACTS
Authors: PATEL NK BURROUGHES JH TRIBBLE MJ LINFIELD EH CHURCHILL AC RITCHIE DA JONES GAC
Citation: Nk. Patel et al., INDEPENDENT CONTACTING TO ELECTRON LAYERS IN A DOUBLE-QUANTUM-WELL SYSTEM USING PD-GE SHALLOW OHMIC CONTACTS, Applied physics letters, 65(7), 1994, pp. 851-853
DOUBLE 2-DIMENSIONAL ELECTRON-GAS STRUCTURE FORMED BY MOLECULAR-BEAM EPITAXY REGROWTH ON AN EX-SITU PATTERNED N-GAAS BACK GATE()
Authors: EVANS RJ GRIMSHAW MP BURROUGHES JH LEADBEATER ML TRIBBLE MJ RITCHIE DA JONES GAC PEPPER M
Citation: Rj. Evans et al., DOUBLE 2-DIMENSIONAL ELECTRON-GAS STRUCTURE FORMED BY MOLECULAR-BEAM EPITAXY REGROWTH ON AN EX-SITU PATTERNED N-GAAS BACK GATE(), Applied physics letters, 65(15), 1994, pp. 1943-1945
FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS
Authors: ARNONE DD BURROUGHES JH PEPPER M GRIMSHAW MP RITCHIE DA JONES GAC
Citation: Dd. Arnone et al., FAR-INFRARED STUDY OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS, Applied physics letters, 64(24), 1994, pp. 3296-3298
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN CONJUGATED POLYMERIC SYSTEMS
Authors: HOLMES AB BRADLEY DDC BROWN AR BURN PL BURROUGHES JH FRIEND RH GREENHAM NC GYMER RW HALLIDAY DA JACKSON RW KRAFT A MARTENS JHF PICHLER K SAMUEL IDW
Citation: Ab. Holmes et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN CONJUGATED POLYMERIC SYSTEMS, Synthetic metals, 57(1), 1993, pp. 4031-4040
LOW-TEMPERATURE OPERATION OF GE-AG OHMIC CONTACTS TO A HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS
Authors: CHABASSEURMOLYNEUX V FROST JEF TRIBBLE MJ GRIMSHAW MP RITCHIE DA CHURCHILL AC JONES GAC PEPPER M BURROUGHES JH
Citation: V. Chabasseurmolyneux et al., LOW-TEMPERATURE OPERATION OF GE-AG OHMIC CONTACTS TO A HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS, Journal of applied physics, 74(9), 1993, pp. 5883-5885
ELECTRONIC-PROPERTIES OF A ONE-DIMENSIONAL CHANNEL FIELD-EFFECT TRANSISTOR FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS
Authors: BURROUGHES JH LEADBEATER ML GRIMSHAW MP EVANS RJ RITCHIE DA JONES GAC PEPPER M
Citation: Jh. Burroughes et al., ELECTRONIC-PROPERTIES OF A ONE-DIMENSIONAL CHANNEL FIELD-EFFECT TRANSISTOR FORMED BY MOLECULAR-BEAM EPITAXIAL REGROWTH ON PATTERNED GAAS, Applied physics letters, 63(16), 1993, pp. 2219-2221
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