AAAAAA

   
Results: 1-25 | 26-32
Results: 1-25/32
GaN electronics for high power, high temperature applications
Authors: Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation: Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor
Authors: Chang, PC Li, NY Baca, AG Hou, HQ Monier, C Laroche, JR Ren, F Pearton, SJ
Citation: Pc. Chang et al., Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor, IEEE ELEC D, 22(3), 2001, pp. 113-115
Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown
Authors: Baca, AG Chang, PC Klem, JF Ashby, CIH Martin, DC
Citation: Ag. Baca et al., Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown, SOL ST ELEC, 45(5), 2001, pp. 721-725
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
Authors: Johnson, JW Baca, AG Briggs, RD Shul, RJ Wendt, JR Monier, C Ren, F Pearton, SJ Dabiran, AM Wowchack, AM Polley, CJ Chow, PP
Citation: Jw. Johnson et al., Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE, SOL ST ELEC, 45(12), 2001, pp. 1979-1985
Inductively coupled high-density plasma-induced etch damage of GaN MESFETs
Authors: Shul, RJ Zhang, L Baca, AG Willison, CG Han, J Pearton, SJ Lee, KP Ren, F
Citation: Rj. Shul et al., Inductively coupled high-density plasma-induced etch damage of GaN MESFETs, SOL ST ELEC, 45(1), 2001, pp. 13-17
Simulation of NPN and PNPAlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design
Authors: Monier, C Ren, F Han, J Chang, PC Shul, RJ Lee, KP Zhang, AP Baca, AG Pearton, S
Citation: C. Monier et al., Simulation of NPN and PNPAlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design, IEEE DEVICE, 48(3), 2001, pp. 427-432
Pnp InGaAsN-based HBT with graded base doping
Authors: Monier, C Baca, AG Chang, PC Li, NY Hou, HQ Ren, F Pearton, SJ
Citation: C. Monier et al., Pnp InGaAsN-based HBT with graded base doping, ELECTR LETT, 37(3), 2001, pp. 198-199
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
Authors: Luo, B Johnson, JW Ren, F Allums, KK Abernathy, CR Pearton, SJ Dwivedi, R Fogarty, TN Wilkins, R Dabiran, AM Wowchack, AM Polley, CJ Chow, PP Baca, AG
Citation: B. Luo et al., dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors, APPL PHYS L, 79(14), 2001, pp. 2196-2198
Fabrication and characterization of GaN junctionfield effect transistors
Authors: Zhang, L Lester, LF Baca, AG Shul, RJ Chang, PC Willison, CG Mishra, UK Denbaars, SP Zolper, JC
Citation: L. Zhang et al., Fabrication and characterization of GaN junctionfield effect transistors, MRS I J N S, 5, 2000, pp. NIL_322-NIL_328
High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges, MRS I J N S, 5, 2000, pp. NIL_715-NIL_720
Comparison of implant isolation species for GaN field-effect transistor structures
Authors: Dang, G Cao, XA Ren, F Pearton, SJ Han, J Baca, AG Shul, RJ Wilson, RG
Citation: G. Dang et al., Comparison of implant isolation species for GaN field-effect transistor structures, MRS I J N S, 5, 2000, pp. NIL_727-NIL_732
Inductively coupled plasma-induced etch damage of GaN p-n junctions
Authors: Shul, RJ Zhang, L Baca, AG Willison, CG Han, J Pearton, SJ Ren, F
Citation: Rj. Shul et al., Inductively coupled plasma-induced etch damage of GaN p-n junctions, J VAC SCI A, 18(4), 2000, pp. 1139-1143
Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches
Authors: Mar, A Loubriel, GM Zutavern, FJ O'Malley, MW Helgeson, WD Brown, DJ Hjalmarson, HP Baca, AG Thornton, RL Donaldson, RD
Citation: A. Mar et al., Doped contacts for high-longevity optically activated, high-gain GaAs photoconductive semiconductor switches, IEEE PLAS S, 28(5), 2000, pp. 1507-1511
Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications
Authors: Monier, C Chang, PC Li, NY LaRoche, JR Baca, AG Hou, HQ Ren, F Pearton, SJ
Citation: C. Monier et al., Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications, SOL ST ELEC, 44(9), 2000, pp. 1515-1521
GaN/AlGaN HBT fabrication
Authors: Ren, F Han, J Hickman, R Van Hove, JM Chow, PP Klaassen, JJ LaRoche, JR Jung, KB Cho, H Cao, XA Donovan, SM Kopf, RF Wilson, RG Baca, AG Shul, RJ Zhang, L Willison, CG Abernathy, CR Pearton, SJ
Citation: F. Ren et al., GaN/AlGaN HBT fabrication, SOL ST ELEC, 44(2), 2000, pp. 239-244
Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
Authors: LaRoche, JR Ren, F Temple, D Pearton, SJ Kuo, JM Baca, AG Cheng, P Park, YD Hudspeth, Q Hebard, AF Arnason, SB
Citation: Jr. Laroche et al., Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors, SOL ST ELEC, 44(12), 2000, pp. 2117-2122
Epitaxially-grown GaN junction field effect transistors
Authors: Zhang, L Lester, LF Baca, AG Shul, RJ Chang, PC Willison, CG Mishra, UK Denbaars, SP Zolper, JC
Citation: L. Zhang et al., Epitaxially-grown GaN junction field effect transistors, IEEE DEVICE, 47(3), 2000, pp. 507-511
Development of a GaAs monolithic surface acoustic wave integrated circuit (vol 34, pg 1254, 1999)
Authors: Baca, AG Heller, EJ Casalnuovo, SA Frye-Mason, GC Klem, JF Drummond, TJ
Citation: Ag. Baca et al., Development of a GaAs monolithic surface acoustic wave integrated circuit (vol 34, pg 1254, 1999), IEEE J SOLI, 35(8), 2000, pp. 1253-1253
DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs
Authors: Li, NY Chang, PC Baca, AG Xie, XM Sharps, PR Hou, HQ
Citation: Ny. Li et al., DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs, ELECTR LETT, 36(1), 2000, pp. 81-83
Cl-2/Ar high-density-plasma damage in GaN Schottky diodes
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., Cl-2/Ar high-density-plasma damage in GaN Schottky diodes, J ELCHEM SO, 147(2), 2000, pp. 719-722
Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities
Authors: Ashby, CIH Zavadil, KR Baca, AG Chang, PC Hammons, BE Hafich, MJ
Citation: Cih. Ashby et al., Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities, APPL PHYS L, 76(3), 2000, pp. 327-329
Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
Authors: Monier, C Pearton, SJ Chang, PC Baca, AG Ren, F
Citation: C. Monier et al., Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 76(21), 2000, pp. 3115-3117
Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors
Authors: Zhang, AP Dang, GT Ren, F Han, J Baca, AG Shul, RJ Cho, H Monier, C Cao, XA Abernathy, CR Pearton, SJ
Citation: Ap. Zhang et al., Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 76(20), 2000, pp. 2943-2945
InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor
Authors: Chang, PC Baca, AG Li, NY Sharps, PR Hou, HQ Laroche, JR Ren, F
Citation: Pc. Chang et al., InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor, APPL PHYS L, 76(19), 2000, pp. 2788-2790
InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor
Authors: Chang, PC Baca, AG Li, NY Xie, XM Hou, HQ Armour, E
Citation: Pc. Chang et al., InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor, APPL PHYS L, 76(16), 2000, pp. 2262-2264
Risultati: 1-25 | 26-32