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Results: 1-14 |
Results: 14
Magnetoresistance in a stripe-shaped two-dimensional electron gas
Authors: Bykov, AA Gusev, GM Leite, JR Moshegov, NT Bakarov, AK Toropov, AI Maude, DK Portal, JC
Citation: Aa. Bykov et al., Magnetoresistance in a stripe-shaped two-dimensional electron gas, PHYSICA B, 298(1-4), 2001, pp. 79-82
Shift of geometrical resonances in a periodical lattice of antidots in tilted magnetic field
Authors: Pogosov, AG Budantsev, MV Pouydebasque, A Entin, MV Maude, DK Portal, JC Plotnikov, AE Toropov, AI Bakarov, AK
Citation: Ag. Pogosov et al., Shift of geometrical resonances in a periodical lattice of antidots in tilted magnetic field, PHYSICA B, 298(1-4), 2001, pp. 291-294
Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy
Authors: Tenne, DA Haisler, VA Bakarov, AK Toropov, AI Gutakovsky, AK Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Self-assembled islands in the (Ga,Al)As/InAs heteroepitaxial system studied by Raman spectroscopy, PHYS ST S-B, 224(1), 2001, pp. 25-29
Coexistence of a two- and three-dimensional Landau states in a wide parabolic quantum well - art. no. 115314
Authors: Sergio, CS Gusev, GM Leite, JR Olshanetskii, EB Bykov, AA Moshegov, NT Bakarov, AK Toropov, AI Maude, DK Estibals, O Portal, JC
Citation: Cs. Sergio et al., Coexistence of a two- and three-dimensional Landau states in a wide parabolic quantum well - art. no. 115314, PHYS REV B, 6411(11), 2001, pp. 5314
Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307
Authors: Pusep, YA Gusev, GM Chiquito, AJ Sokolov, SS Bakarov, AK Toropov, AI Leite, JR
Citation: Ya. Pusep et al., Vertical longitudinal magnetoresistance of semiconductor superlattices - art. no. 165307, PHYS REV B, 6316(16), 2001, pp. 5307
Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates
Authors: Bykov, AA Bakarov, AK Goran, AV Latyshev, AV Toropov, AI
Citation: Aa. Bykov et al., Anisotropy of magnetic transport and self-organization of corrugated heterointerfaces in selectively doped structures on GaAs(100) substrates, JETP LETTER, 74(3), 2001, pp. 164-167
Hall effect in a spatially fluctuating magnetic field with zero mean
Authors: Bykov, AA Gusev, GM Leite, JR Bakarov, AK Moshegov, NT Casse, M Maude, DK Portal, JC
Citation: Aa. Bykov et al., Hall effect in a spatially fluctuating magnetic field with zero mean, PHYS REV B, 61(8), 2000, pp. 5505-5510
Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2x4)-reconstructed GaAs(001) surface
Authors: Galitsyn, YG Moshchenko, SP Toropov, AI Bakarov, AK
Citation: Yg. Galitsyn et al., Oscillation of the mirror and fractional RHEED reflections during homoepitaxy on the (2x4)-reconstructed GaAs(001) surface, TECH PHYS L, 26(4), 2000, pp. 307-310
Raman study of self-assembled GaAs and AlAs islands embedded in InAs
Authors: Tenne, DA Haisler, VA Toropov, AI Bakarov, AK Gutakovsky, AK Zahn, DRT Shebanin, AP
Citation: Da. Tenne et al., Raman study of self-assembled GaAs and AlAs islands embedded in InAs, PHYS REV B, 61(20), 2000, pp. 13785-13790
Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas
Authors: Bykov, AA Bakarov, AK Litvin, LV Toropov, AI
Citation: Aa. Bykov et al., Magnetotransport properties of a ballistic ring interferometer on the basis of a GaAs quantum well with a high concentration of 2D electron gas, JETP LETTER, 72(4), 2000, pp. 209-212
Polariton luminescence in high-purity layers of AlGaAs solid solutions
Authors: Shamirzaev, TS Zhuravlev, KS Toropov, AI Bakarov, AK
Citation: Ts. Shamirzaev et al., Polariton luminescence in high-purity layers of AlGaAs solid solutions, JETP LETTER, 71(4), 2000, pp. 148-150
Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy
Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bakarov, AK
Citation: Ks. Zhuravlev et al., Photoluminescence of high-quality AlGaAs layers grown by molecular-beam epitaxy, APPL PHYS L, 76(9), 2000, pp. 1131-1133
Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells
Authors: Gaisler, VA Toropov, AI Bakarov, AK Kalagin, AK Moshegov, NT Tenne, DA Kachanova, MM Kopp, OR Nenasheva, LA Medvedev, AS
Citation: Va. Gaisler et al., Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells, TECH PHYS L, 25(10), 1999, pp. 775-777
Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix
Authors: Tenne, DA Gaisler, VA Bakarov, AK Toropov, AI Gutakovskii, AK Shebanin, AP Zahn, DRT
Citation: Da. Tenne et al., Optical phonons in nanosize GaAs and AlAs clusters in an InAs matrix, JETP LETTER, 70(7), 1999, pp. 469-475
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