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Results: 1-9 |
Results: 9
An indium phosphide MMIC amplifier for 180-205 GHz
Authors: Archer, JW Lai, R Grundbacher, R Barsky, M Tsai, R Reid, P
Citation: Jw. Archer et al., An indium phosphide MMIC amplifier for 180-205 GHz, IEEE MICR W, 11(1), 2001, pp. 4-6
High performance InP high electron mobility transistors by valved phosphorus cracker
Authors: Chin, TP Chen, YC Barsky, M Wojtowicz, M Grundbacher, R Lai, R Streit, DC Block, TR
Citation: Tp. Chin et al., High performance InP high electron mobility transistors by valved phosphorus cracker, J VAC SCI B, 18(3), 2000, pp. 1642-1644
Temperature-dependent small-signal and noise parameter measurements and modeling on InPHEMTs
Authors: Murti, MR Laskar, J Nuttinck, S Yoo, S Raghavan, A Bergman, JI Bautista, J Lai, R Grundbacher, R Barsky, M Chin, P Liu, PH
Citation: Mr. Murti et al., Temperature-dependent small-signal and noise parameter measurements and modeling on InPHEMTs, IEEE MICR T, 48(12), 2000, pp. 2579-2587
160-190-GHz monolithic low-noise amplifiers
Authors: Kok, YL Wang, H Huang, TW Lai, R Barsky, M Chen, YC Sholley, M Block, T Streit, DC Liu, PH Allen, BR Samoska, L Gaier, T
Citation: Yl. Kok et al., 160-190-GHz monolithic low-noise amplifiers, IEEE MICR G, 9(8), 1999, pp. 311-313
High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions
Authors: Weinreb, S Gaier, T Lai, R Barsky, M Leong, YC Samoska, L
Citation: S. Weinreb et al., High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions, IEEE MICR G, 9(7), 1999, pp. 282-284
A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer
Authors: Kok, YL Wang, H Barsky, M Lai, R Sholley, M Allen, B
Citation: Yl. Kok et al., A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer, IEEE MICR G, 9(12), 1999, pp. 529-531
Pseudomorphic InPHEMT's with dry-etched source vias having 190 mW output power and 40% PAE at V-band
Authors: Grundbacher, R Lai, R Nishimoto, M Chin, TP Chen, YC Barsky, M Block, T Streit, D
Citation: R. Grundbacher et al., Pseudomorphic InPHEMT's with dry-etched source vias having 190 mW output power and 40% PAE at V-band, IEEE ELEC D, 20(10), 1999, pp. 517-519
An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz
Authors: Lai, R Barsky, M Huang, T Sholley, M Wang, H Kok, YL Streit, DC Block, T Liu, PH Gaier, T Samoska, L
Citation: R. Lai et al., An InP HEMT MMIC LNA with 7.2-dB gain at 190 GHz, IEEE MICR G, 8(11), 1998, pp. 393-395
A 95-GHz InP HEMT MMIC amplifier with 427-mW power output
Authors: Chen, YC Ingram, DL Lai, R Barsky, M Grunbacher, R Block, T Yen, HC Streit, DC
Citation: Yc. Chen et al., A 95-GHz InP HEMT MMIC amplifier with 427-mW power output, IEEE MICR G, 8(11), 1998, pp. 399-401
Risultati: 1-9 |