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Results: 1-25 | 26-27
Results: 1-25/27
Defect study of Zn-doped p-type gallium antimonide using positron lifetimespectroscopy - art. no. 075201
Authors: Ling, CC Fung, S Beling, CD Weng, HM
Citation: Cc. Ling et al., Defect study of Zn-doped p-type gallium antimonide using positron lifetimespectroscopy - art. no. 075201, PHYS REV B, 6407(7), 2001, pp. 5201
Residual donors and compensation in metalorganic chemical vapor depositionas-grown n-GaN
Authors: Xu, XL Liu, HT Shi, CS Zhao, YW Fung, S Beling, CD
Citation: Xl. Xu et al., Residual donors and compensation in metalorganic chemical vapor depositionas-grown n-GaN, J APPL PHYS, 90(12), 2001, pp. 6130-6134
Native donors and compensation in Fe-doped liquid encapsulated CzochralskiInP
Authors: Zhao, YW Luo, YL Fung, S Beling, CD Sun, NF Chen, XD Cao, LX Sun, TN Bi, KY Wu, X
Citation: Yw. Zhao et al., Native donors and compensation in Fe-doped liquid encapsulated CzochralskiInP, J APPL PHYS, 89(1), 2001, pp. 86-90
Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
Authors: Ling, CC Beling, CD Gong, M Chen, XD Fung, S
Citation: Cc. Ling et al., Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy, DEFECT DIFF, 183-1, 2000, pp. 1-23
Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide
Authors: Ling, CC Deng, AH Fung, S Beling, CD
Citation: Cc. Ling et al., Positron lifetime spectroscopic studies of as-grown 6H-silicon carbide, APPL PHYS A, 70(1), 2000, pp. 33-38
Stability control of single bubble sonoluminescence light
Authors: Fan, SW Beling, CD Fung, S
Citation: Sw. Fan et al., Stability control of single bubble sonoluminescence light, PHYSICA B, 279(1-3), 2000, pp. 233-236
Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy
Authors: Ling, CC Beling, CD Fung, S
Citation: Cc. Ling et al., Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy, PHYS REV B, 62(12), 2000, pp. 8016-8022
Photoinduced dehydrogenation of defects in undoped a-Si : H using positronannihilation spectroscopy
Authors: Zou, X Chan, YC Webb, DP Lam, YW Hu, YF Beling, CD Fung, S Weng, HM
Citation: X. Zou et al., Photoinduced dehydrogenation of defects in undoped a-Si : H using positronannihilation spectroscopy, PHYS REV L, 84(4), 2000, pp. 769-772
H-vacancy complex VInH4 abundance and its influences in n-type LEC InP
Authors: Fung, S Zhao, YW Sun, NF Beling, CD Chen, XD Bi, KY Wu, X Zhang, J Sun, TN
Citation: S. Fung et al., H-vacancy complex VInH4 abundance and its influences in n-type LEC InP, J CRYST GR, 211(1-4), 2000, pp. 174-178
Carrier mobility distribution in annealed undoped LEC InP material
Authors: Zhao, YW Fung, S Beling, CD Sun, NF Chen, XD Sun, TN Zhang, J Bi, KY Wu, X
Citation: Yw. Zhao et al., Carrier mobility distribution in annealed undoped LEC InP material, J CRYST GR, 211(1-4), 2000, pp. 179-183
A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC
Authors: Chen, XD Fung, S Beling, CD Gong, M Henkel, T Tanoue, H Kobayashi, N
Citation: Xd. Chen et al., A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC, J APPL PHYS, 88(8), 2000, pp. 4558-4562
Electrical conduction in annealed semi-insulating InP
Authors: Fung, S Zhao, YW Luo, YL Beling, CD
Citation: S. Fung et al., Electrical conduction in annealed semi-insulating InP, J APPL PHYS, 87(8), 2000, pp. 3838-3842
Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system
Authors: Xu, XL Beling, CD Fung, S Zhao, YW Sun, NF Sun, TN Zhang, QL Zhan, HH Sun, BQ Wang, JN Ge, WK Wong, PC
Citation: Xl. Xu et al., Formation mechanism of a degenerate thin layer at the interface of a GaN/sapphire system, APPL PHYS L, 76(2), 2000, pp. 152-154
Identification of charge states of indium vacancies in InP
Authors: LiMing, W Fung, S Beling, CD
Citation: W. Liming et al., Identification of charge states of indium vacancies in InP, ACT PHY P A, 95(4), 1999, pp. 612-614
Positron beam study of low-temperature-grown GaAs with aluminum delta layers
Authors: Fleischer, S Hu, YF Beling, CD Fung, S Smith, TL Moulding, KM Weng, HM Missous, M
Citation: S. Fleischer et al., Positron beam study of low-temperature-grown GaAs with aluminum delta layers, APPL SURF S, 149(1-4), 1999, pp. 159-164
A theoretical search for possible high efficiency semiconductor based field assisted positron moderators
Authors: Beling, CD Fung, S Ming, L Gong, M Panda, K
Citation: Cd. Beling et al., A theoretical search for possible high efficiency semiconductor based field assisted positron moderators, APPL SURF S, 149(1-4), 1999, pp. 253-259
Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique
Authors: Ling, CC Shek, YF Huang, AP Fung, S Beling, CD
Citation: Cc. Ling et al., Electric-field distribution in Au-semi-insulating GaAs contact investigated by positron-lifetime technique, PHYS REV B, 59(8), 1999, pp. 5751-5758
A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature
Authors: Fleischer, S Surya, C Hu, YF Beling, CD Fung, S Smith, TL Moulding, KM Missous, M
Citation: S. Fleischer et al., A study of the vacancy-defect distribution in a GaAs/AlxGa1-xAs multi-layer structure grown at low temperature, J CRYST GR, 196(1), 1999, pp. 53-61
Thermally induced conduction type conversion in n-type InP
Authors: Fung, S Zhao, YW Beling, CD Xu, XL Sun, NF Sun, TN Chen, XD
Citation: S. Fung et al., Thermally induced conduction type conversion in n-type InP, J APPL PHYS, 86(4), 1999, pp. 2361-2363
Effects of annealing on the electrical properties of Fe-doped InP
Authors: Zhao, YW Fung, S Beling, CD Sun, NF Sun, TN Chen, XD Yang, GY
Citation: Yw. Zhao et al., Effects of annealing on the electrical properties of Fe-doped InP, J APPL PHYS, 86(2), 1999, pp. 981-984
Electron-irradiation-induced deep levels in n-type 6H-SiC
Authors: Gong, M Fung, S Beling, CD You, ZP
Citation: M. Gong et al., Electron-irradiation-induced deep levels in n-type 6H-SiC, J APPL PHYS, 85(11), 1999, pp. 7604-7608
A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC
Authors: Gong, M Fung, S Beling, CD You, SP
Citation: M. Gong et al., A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H-SiC, J APPL PHYS, 85(10), 1999, pp. 7120-7122
Gallium implantation induced deep levels in n-type 6H-SIC
Authors: Gong, M Fung, S Beling, CD Brauer, G Wirth, H Skorupa, W
Citation: M. Gong et al., Gallium implantation induced deep levels in n-type 6H-SIC, J APPL PHYS, 85(1), 1999, pp. 105-107
On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy
Authors: Beling, CD LiMing, W Shan, YY Cheung, SH Fung, S Panda, BK Seitsonen, AP
Citation: Cd. Beling et al., On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy, J PHYS-COND, 10(46), 1998, pp. 10475-10492
Positron-lifetime study of compensation defects in undoped semi-insulatingInP
Authors: Beling, CD Deng, AH Shan, YY Zhao, YW Fung, S Sun, NF Sun, TN Chen, XD
Citation: Cd. Beling et al., Positron-lifetime study of compensation defects in undoped semi-insulatingInP, PHYS REV B, 58(20), 1998, pp. 13648-13653
Risultati: 1-25 | 26-27