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Results: 1-9 |
Results: 9
Influence of zinc co-doping on carbon doped InGaAs
Authors: Keiper, D Sermage, B Benchimol, JL
Citation: D. Keiper et al., Influence of zinc co-doping on carbon doped InGaAs, JPN J A P 2, 40(2B), 2001, pp. L137-L139
Experimental procedure for the evaluation of GaAs-based HBT's reliability
Authors: Maneux, C Labat, N Malbert, N Touboul, A Danto, Y Dumas, JM Riet, M Benchimol, JL
Citation: C. Maneux et al., Experimental procedure for the evaluation of GaAs-based HBT's reliability, MICROELEC J, 32(4), 2001, pp. 357-371
InGaAs/InP DHBT technology and design methodology for over 40 Gb/s opticalcommunication circuits
Authors: Andre, P Blayac, S Berdaguer, P Benchimol, JL Godin, J Kauffmann, N Konczykowska, A Kasbari, AE Riet, M
Citation: P. Andre et al., InGaAs/InP DHBT technology and design methodology for over 40 Gb/s opticalcommunication circuits, IEEE J SOLI, 36(9), 2001, pp. 1321-1327
InPHBT driver circuit optimization for high-speed ETDM transmission
Authors: Kauffmann, N Blayac, S Abboun, M Andre, P Aniel, F Riet, M Benchimol, JL Godin, J Konczykowska, A
Citation: N. Kauffmann et al., InPHBT driver circuit optimization for high-speed ETDM transmission, IEEE J SOLI, 36(4), 2001, pp. 639-647
Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants (vol 14, pg 1136, 1999)
Authors: Gerard, F Theys, B Lusson, A Jomard, F Dolin, C Rao, EVK Benchimol, JL
Citation: F. Gerard et al., Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants (vol 14, pg 1136, 1999), SEMIC SCI T, 15(2), 2000, pp. 233-233
TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures
Authors: Patriarche, G Glas, F Le Roux, G Largeau, L Mereuta, A Ougazzaden, A Benchimol, JL
Citation: G. Patriarche et al., TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures, J CRYST GR, 221, 2000, pp. 12-19
Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs
Authors: Benchimol, JL Mba, J Sermage, B Riet, M Blayac, S Berdaguer, P Duchenois, AM Andre, P Thuret, J Gonzalez, C Konczykowska, A
Citation: Jl. Benchimol et al., Investigation of carbon-doped base materials grown by CBE for Al-free InPHBTs, J CRYST GR, 209(2-3), 2000, pp. 476-480
Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors
Authors: Danelon, V Aniel, F Benchimol, JL Mba, J Riet, M Crozat, P Vernet, G Adde, R
Citation: V. Danelon et al., Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors, IEEE MICR G, 9(5), 1999, pp. 195-197
Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants
Authors: Gerard, F Theys, B Lusson, A Jomard, F Dolin, C Rao, EVK Benchimol, JL
Citation: F. Gerard et al., Hydrogen in Be-doped GaInAsP lattice matched to InP: diffusion and interactions with dopants, SEMIC SCI T, 14(12), 1999, pp. 1136-1140
Risultati: 1-9 |