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Results:
1-14
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Results: 14
Authors:
Breymesser, A
Schlosser, V
Peiro, D
Voz, C
Bertomeu, J
Andreu, J
Summhammer, J
Citation: A. Breymesser et al., Kelvin probe measurements of microcrystalline silicon on a nanometer scaleusing SFM, SOL EN MAT, 66(1-4), 2001, pp. 171-177
Authors:
Fonrodona, M
Soler, D
Bertomeu, J
Andreu, J
Citation: M. Fonrodona et al., Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition, THIN SOL FI, 395(1-2), 2001, pp. 125-129
Authors:
Orpella, A
Voz, C
Puigdollers, J
Dosev, D
Fonrodona, M
Soler, D
Bertomeu, J
Asensi, JM
Andreu, J
Alcubilla, R
Citation: A. Orpella et al., Stability of hydrogenated nanocrystalline silicon thin-film transistors, THIN SOL FI, 395(1-2), 2001, pp. 335-338
Authors:
Soler, D
Fonrodona, M
Voz, C
Bertomeu, J
Andreu, J
Citation: D. Soler et al., Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD, THIN SOL FI, 383(1-2), 2001, pp. 189-191
Authors:
Voz, C
Soler, D
Fonrodona, M
Bertomeu, J
Asensi, JM
Andreau, J
Citation: C. Voz et al., Optoelectronic studies in nanocrystalline silicon Schottky diodes obtainedby hot-wire CVD, THIN SOL FI, 383(1-2), 2001, pp. 258-260
Authors:
Dosev, DK
Puigdollers, J
Orpella, A
Voz, C
Fonrodona, M
Soler, D
Marsal, LF
Pallares, J
Bertomeu, J
Andreu, J
Alcubilla, R
Citation: Dk. Dosev et al., Analysis of bias stress on thin-film transistors obtained by Hot-Wire Chemical Vapour Deposition, THIN SOL FI, 383(1-2), 2001, pp. 307-309
Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition
Authors:
Voz, C
Peiro, D
Fonrodona, M
Soler, D
Bertomeu, J
Andreu, J
Citation: C. Voz et al., Microdoping compensation of microcrystalline silicon obtained by hot-wire chemical vapour deposition, SOL EN MAT, 63(3), 2000, pp. 237-246
Authors:
Voz, C
Peiro, D
Bertomeu, J
Soler, D
Fonrodona, M
Andreu, J
Citation: C. Voz et al., Optimisation of doped microcrystalline silicon films deposited at very lowtemperatures by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 278-283
Authors:
Puigdollers, J
Dosev, D
Orpella, A
Vox, C
Peiro, D
Bertomeu, J
Marsal, LF
Pallares, J
Andreu, J
Alcubilla, R
Citation: J. Puigdollers et al., Microcrystalline silicon thin film transistors obtained by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 526-529
Authors:
Peiro, D
Bertomeu, J
Voz, C
Fonrodona, M
Soler, D
Andreu, J
Citation: D. Peiro et al., Structure of microcrystalline silicon films deposited at very low temperatures by hot-wire CVD, MAT SCI E B, 69, 2000, pp. 536-541
Authors:
Morral, AFI
Bertomeu, J
Cabarrocas, PRI
Citation: Afi. Morral et al., The role of hydrogen in the formation of microcrystalline silicon, MAT SCI E B, 69, 2000, pp. 559-563
Authors:
Puigdollers, J
Orpella, A
Dosev, D
Voz, C
Peiro, D
Pallares, J
Marsal, LF
Bertomeu, J
Andreu, J
Alcubilla, R
Citation: J. Puigdollers et al., Thin film transistors obtained by hot wire CVD, J NON-CRYST, 266, 2000, pp. 1304-1309
Authors:
Niikura, C
Guillet, J
Brenot, R
Equer, B
Bouree, JE
Voz, C
Peiro, D
Asensi, JM
Bertomeu, J
Andreu, J
Citation: C. Niikura et al., Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 385-390
Authors:
Stoger, M
Breymesser, A
Schlosser, V
Ramadori, M
Plunger, V
Peiro, D
Voz, C
Bertomeu, J
Nelhiebel, M
Schattschneider, P
Andreu, J
Citation: M. Stoger et al., Investigation of defect formation and electronic transport in microcrystalline silicon deposited by hot-wire CVD, PHYSICA B, 274, 1999, pp. 540-543
Risultati:
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