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Results:
1-19
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Results: 19
Authors:
de Boer, FWN
Bethge, K
Bokemeyer, H
van Dantzig, R
van Klinken, J
Mironov, V
Muller, KA
Stiebing, KE
Citation: Fwn. De Boer et al., Further search for a neutral boson with a mass around 9 MeV/c(2), J PHYS G-NU, 27(4), 2001, pp. L29-L40
Authors:
Alt, HC
Egorov, AY
Riechert, H
Wiedemann, B
Meyer, JD
Michelmann, RW
Bethge, K
Citation: Hc. Alt et al., Local vibrational mode absorption of nitrogen in GaAsN and InGaAsN layers grown by molecular beam epitaxy, PHYSICA B, 302, 2001, pp. 282-290
Authors:
Stiebing, KE
Muller, KA
Baumann, J
Bethge, K
Bernhardt, J
Bokemeyer, H
Folger, H
Frohlich, O
Hohn, O
Kavermann, G
Lambrinidis, G
Muller, A
Peter, J
Runkel, S
Schmidt, L
Schmidt-Bocking, H
Senger, P
Thee, P
Ullrich, J
Citation: Ke. Stiebing et al., On the spectroscopy of atomic electrons (positrons) in the energy range of10 to 50 MeV from heavy-ion collisions at intermediate energies, EUR PHY J A, 8(1), 2000, pp. 87-96
Authors:
Al-Turany, M
Meyer, JD
Bethge, K
Citation: M. Al-turany et al., Monte Carlo simulation of particle-induced X-ray emission channeling spectra of GaAs crystals, NUCL INST B, 168(3), 2000, pp. 362-366
Authors:
Ditroi, F
Meyer, JD
Stiebing, K
Biri, S
Bethge, K
Citation: F. Ditroi et al., Investigation of charge-state modifications under channeling conditions byhighly charged heavy projectiles, NUCL INST B, 161, 2000, pp. 111-114
Authors:
Theodossiu, E
Baumann, H
Polychroniadis, EK
Bethge, K
Citation: E. Theodossiu et al., Ion beam synthesis and characterization of thin SiC surface layers, NUCL INST B, 161, 2000, pp. 941-945
Authors:
Link, F
Baumann, H
Bethge, K
Citation: F. Link et al., Determination of the carbon depth profiles of (Si1CxCy)-C-12-C-13 layers using RBS and NRRA, NUCL INST B, 161, 2000, pp. 1095-1098
Authors:
Moller, W
Behrisch, R
Bethge, K
Grotzschel, R
Citation: W. Moller et al., 14th International Conference on Ion Beam Analysis (TBA-14) 6th European Conference on Accelerators in Applied Research and Technology (ECAART-6), NUCL INST B, 161, 2000, pp. VII-VIII
Authors:
Theodossiu, E
Baumann, H
Klimenkov, M
Matz, W
Bethge, K
Citation: E. Theodossiu et al., Characterization of crystallinity of SiC surface layers produced by ion implantation, PHYS ST S-A, 182(2), 2000, pp. 653-660
Authors:
Alt, HC
Egorov, AY
Riechert, H
Wiedemann, B
Meyer, JD
Michelmann, RW
Bethge, K
Citation: Hc. Alt et al., Infrared absorption study of nitrogen in N-implanted GaAs and epitaxially grown GaAs1-xNx layers, APPL PHYS L, 77(21), 2000, pp. 3331-3333
Authors:
Alt, HC
Wiedemann, B
Meyer, JD
Michelmann, RW
Bethge, K
Citation: Hc. Alt et al., Analysis of electrically active carbon in semi-insulating gallium arsenideby infrared absorption spectroscopy, JPN J A P 1, 38(12A), 1999, pp. 6611-6616
Authors:
Wiedemann, B
Alt, HC
Meyer, JD
Michelmann, RW
Bethge, K
Citation: B. Wiedemann et al., Spark source mass spectrometric calibration of the local vibrational mode absorption of carbon in gallium arsenide on arsenic sublattice sites, FRESEN J AN, 364(8), 1999, pp. 768-771
Authors:
Wiedemann, B
Radlinger, G
Alt, HC
Heumann, KG
Bethge, K
Citation: B. Wiedemann et al., Spark source mass spectrometric assessment of boron and nitrogen concentrations in crystalline gallium arsenide, FRESEN J AN, 364(8), 1999, pp. 772-776
Authors:
Wiedemann, B
Alt, HC
Bethge, K
Meyer, JD
Michelmann, RW
Citation: B. Wiedemann et al., Assessment of carbon concentrations in polycrystalline and monocrystallinegallium arsenide using SSMS, FTIR, and CPAA, MAT SCI E B, 66(1-3), 1999, pp. 118-122
Authors:
de Boer, FWN
Bethge, K
Bokemeyer, H
Buda, A
van Dantzig, R
van Klinken, J
Muller, KA
Stiebing, KE
Citation: Fwn. De Boer et al., Search for a short-lived neutral boson with a mass around 9 MeV/c(2), NUCL PH B-P, 72, 1999, pp. 189-194
Authors:
Ganz, R
Thee, P
Bar, R
Bethge, K
Bokemeyer, H
Folger, H
Samek, M
Salabura, P
Schwalm, D
Stiebing, KE
Citation: R. Ganz et al., An angle-sensitive detection system for scattered heavy ions, NUCL INST A, 432(2-3), 1999, pp. 379-391
Authors:
Al-Turany, M
Meyer, JD
Bethge, K
Citation: M. Al-turany et al., PIXE analysis with the XR-100CR Si-PIN detector, NUCL INST B, 155(1-2), 1999, pp. 137-142
Authors:
Theodossiu, E
Baumann, H
Bethge, K
Citation: E. Theodossiu et al., Formation of SiC-surface layer by ion implantation, J APPL PHYS, 86(8), 1999, pp. 4703-4705
Authors:
Dohrmann, F
Bethge, K
Enghardt, W
Fateev, O
Garabatos, C
Grosse, E
Muntz, C
Karig, W
Koenig, W
Smykov, L
Sobiella, M
Steigerwald, A
Stelzer, H
Stroth, J
Wustenfeld, J
Zanewsky, Y
Zentek, A
Citation: F. Dohrmann et al., A low-mass drift chamber system for the HADES-spectrometer, ACT PHY P B, 29(11), 1998, pp. 3189-3193
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