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Results: 1-11 |
Results: 11
The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
Authors: Biefeld, RM Cederberg, JG Peake, GM Kurtz, SR
Citation: Rm. Biefeld et al., The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition, J CRYST GR, 225(2-4), 2001, pp. 384-390
Special issue on the Ninth Biennial Workshop on Organometallic Vapor PhaseEpitaxy, which were held 23-27 May 1999, Ponte Vedra Beach, Florida - Foreword
Authors: Biefeld, RM Wang, CA
Citation: Rm. Biefeld et Ca. Wang, Special issue on the Ninth Biennial Workshop on Organometallic Vapor PhaseEpitaxy, which were held 23-27 May 1999, Ponte Vedra Beach, Florida - Foreword, J ELEC MAT, 29(1), 2000, pp. 1-1
Exploring new active regions for type IInAsSb strained-layer lasers
Authors: Biefeld, RM Phillips, JD Kurtz, SR
Citation: Rm. Biefeld et al., Exploring new active regions for type IInAsSb strained-layer lasers, J ELEC MAT, 29(1), 2000, pp. 91-93
InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition
Authors: Biefeld, RM Phillips, JD Kurtz, SR
Citation: Rm. Biefeld et al., InAsSb/InPSb strained-layer superlattice growth using metal-organic chemical vapor deposition, J CRYST GR, 211(1-4), 2000, pp. 400-404
Growth of InSb on GaAs using InAlSb buffer layers
Authors: Biefeld, RM Phillips, JD
Citation: Rm. Biefeld et Jd. Phillips, Growth of InSb on GaAs using InAlSb buffer layers, J CRYST GR, 209(4), 2000, pp. 567-571
Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices
Authors: Zuo, SL Yu, ET Allerman, AA Biefeld, RM
Citation: Sl. Zuo et al., Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices, J VAC SCI B, 17(4), 1999, pp. 1781-1785
Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy
Authors: Yu, ET Zuo, SL Bi, WG Tu, CW Allerman, AA Biefeld, RM
Citation: Et. Yu et al., Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy, J VAC SCI A, 17(4), 1999, pp. 2246-2250
The band-gap bowing of AlxGa1-xN alloys
Authors: Lee, SR Wright, AF Crawford, MH Petersen, GA Han, J Biefeld, RM
Citation: Sr. Lee et al., The band-gap bowing of AlxGa1-xN alloys, APPL PHYS L, 74(22), 1999, pp. 3344-3346
OMVPE growth and gas-phase reactions of AlGaN for UV emitters
Authors: Han, J Figiel, JJ Crawford, MH Banas, MA Bartram, ME Biefeld, RM Song, YK Nurmikko, AV
Citation: J. Han et al., OMVPE growth and gas-phase reactions of AlGaN for UV emitters, J CRYST GR, 195(1-4), 1998, pp. 291-296
Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition
Authors: Biefeld, RM Allerman, AA Kurtz, SR Baucom, KC
Citation: Rm. Biefeld et al., Progress in the growth of mid-infrared InAsSb emitters by metal-organic chemical vapor deposition, J CRYST GR, 195(1-4), 1998, pp. 356-362
Metalorganic vapour phase epitaxy 1998 - Proceedings of the Ninth International Conference on Metalorganic Vapour Phase Epitaxy - La Jolla, California, USA, May 31 June 4, 1998 - Preface
Authors: Biefeld, RM Stringfellow, GB
Citation: Rm. Biefeld et Gb. Stringfellow, Metalorganic vapour phase epitaxy 1998 - Proceedings of the Ninth International Conference on Metalorganic Vapour Phase Epitaxy - La Jolla, California, USA, May 31 June 4, 1998 - Preface, J CRYST GR, 195(1-4), 1998, pp. XI-XI
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