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Results: 1-12 |
Results: 12
Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN
Authors: Kim, S Rhee, SJ White, JO Li, X Papen, GC Coleman, JJ Bishop, SG
Citation: S. Kim et al., Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN, MAT SCI E B, 81(1-3), 2001, pp. 136-139
Excimer laser annealing of Er-implanted GaN
Authors: Rhee, SJ Kim, S Sterner, CW White, JO Bishop, SG
Citation: Sj. Rhee et al., Excimer laser annealing of Er-implanted GaN, J APPL PHYS, 90(6), 2001, pp. 2760-2763
Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN
Authors: Kim, S Henry, RL Wickenden, AE Koleske, DD Rhee, SJ White, JO Myoung, JM Kim, K Li, X Coleman, JJ Bishop, SG
Citation: S. Kim et al., Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN, J APPL PHYS, 90(1), 2001, pp. 252-259
Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN
Authors: Kim, S Hong, JK Moon, BM Sung, MY Myoung, JM Bishop, SG
Citation: S. Kim et al., Effects of Mg-codoping on the 1540-nm photoluminescence of Er-implanted GaN, J KOR PHYS, 37(6), 2000, pp. 993-997
Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption
Authors: Bishop, SG Turnbull, DA Aitken, BG
Citation: Sg. Bishop et al., Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption, J NON-CRYST, 266, 2000, pp. 876-883
Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaNby Mg codoping
Authors: Kim, S Rhee, SJ Li, X Coleman, JJ Bishop, SG
Citation: S. Kim et al., Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaNby Mg codoping, APPL PHYS L, 76(17), 2000, pp. 2403-2405
Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide
Authors: Shin, JH Seo, SY Kim, S Bishop, SG
Citation: Jh. Shin et al., Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide, APPL PHYS L, 76(15), 2000, pp. 1999-2001
Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN
Authors: Kim, S Rhee, SJ Li, X Coleman, JJ Bishop, SG
Citation: S. Kim et al., Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN, J ELEC MAT, 28(3), 1999, pp. 266-274
Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses
Authors: Turnbull, DA Aitken, BG Bishop, SG
Citation: Da. Turnbull et al., Broad-band excitation mechanism for photoluminescence in Er-doped Ge25Ga1.7As8.3S65 glasses, J NON-CRYST, 244(2-3), 1999, pp. 260-266
Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate
Authors: Jones, AM Jewell, JL Mabon, JC Reuter, EE Bishop, SG Roh, SD Coleman, JJ
Citation: Am. Jones et al., Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate, APPL PHYS L, 74(7), 1999, pp. 1000-1002
Low loss photoinduced waveguides in rapid thermally annealed films of chalcogenide glasses
Authors: Ramachandran, S Bishop, SG
Citation: S. Ramachandran et Sg. Bishop, Low loss photoinduced waveguides in rapid thermally annealed films of chalcogenide glasses, APPL PHYS L, 74(1), 1999, pp. 13-15
GaN epitaxial lateral overgrowth and optical characterization
Authors: Li, X Bishop, SG Coleman, JJ
Citation: X. Li et al., GaN epitaxial lateral overgrowth and optical characterization, APPL PHYS L, 73(9), 1998, pp. 1179-1181
Risultati: 1-12 |