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Results: 1-21 |
Results: 21
Spectroscopy and modeling of carrier recombination in III-N heterostructures
Authors: Sweeney, PM Cheung, MC Chen, F Cartwright, AN Bour, DP Kneissl, M
Citation: Pm. Sweeney et al., Spectroscopy and modeling of carrier recombination in III-N heterostructures, PHYS ST S-B, 228(1), 2001, pp. 115-119
Spatially and spectrally resolved measurement of optical loss in InGaN laser structures
Authors: Summers, HD Smowton, PM Blood, P Dineen, M Perks, RM Bour, DP Kneissel, M
Citation: Hd. Summers et al., Spatially and spectrally resolved measurement of optical loss in InGaN laser structures, J CRYST GR, 230(3-4), 2001, pp. 517-521
CW operation of InGaN MQW laser diodes
Authors: Bour, DP Kneissl, M Van de Walle, CG Northrup, J Romano, LT Teepe, M Wood, R Schmidt, T Johnson, NM
Citation: Dp. Bour et al., CW operation of InGaN MQW laser diodes, PHYS ST S-A, 180(1), 2000, pp. 139-147
Performance and optical gain characteristic of InGaN MQW laser diodes
Authors: Kneissl, M Van de Walle, CG Bour, DP Romano, LT Goddard, LL Master, CP Northrup, JE Johnson, NM
Citation: M. Kneissl et al., Performance and optical gain characteristic of InGaN MQW laser diodes, J LUMINESC, 87-9, 2000, pp. 135-139
Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing
Authors: Goddard, LL Kneissl, M Bour, DP Johnson, NM
Citation: Ll. Goddard et al., Gain characteristic of continuous-wave InGaN multiple quantum well laser diodes during life testing, J APPL PHYS, 88(7), 2000, pp. 3820-3823
Design and performance of asymmetric waveguide nitride laser diodes
Authors: Bour, DP Kneissl, M Van de Walle, CG Evans, GA Romano, LT Northrup, J Teepe, M Wood, R Schmidt, T Schoffberger, S Johnson, NM
Citation: Dp. Bour et al., Design and performance of asymmetric waveguide nitride laser diodes, IEEE J Q EL, 36(2), 2000, pp. 184-191
InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metalbonding and laser lift-off
Authors: Wong, WS Sands, T Cheung, NW Kneissl, M Bour, DP Mei, P Romano, LT Johnson, NM
Citation: Ws. Wong et al., InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metalbonding and laser lift-off, APPL PHYS L, 77(18), 2000, pp. 2822-2824
Performance and degradation of continuous-wave InGaN multiple-quantum-welllaser diodes on epitaxially laterally overgrown GaN substrates
Authors: Kneissl, M Bour, DP Romano, L Van de Walle, CG Northrup, JE Wong, WS Treat, DW Teepe, M Schmidt, T Johnson, NM
Citation: M. Kneissl et al., Performance and degradation of continuous-wave InGaN multiple-quantum-welllaser diodes on epitaxially laterally overgrown GaN substrates, APPL PHYS L, 77(13), 2000, pp. 1931-1933
Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography
Authors: McCartney, MR Ponce, FA Cai, J Bour, DP
Citation: Mr. Mccartney et al., Mapping electrostatic potential across an AlGaN/InGaN/AlGaN diode by electron holography, APPL PHYS L, 76(21), 2000, pp. 3055-3057
Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser
Authors: Hofstetter, D Romano, LT Paoli, TL Bour, DP Kneissl, M
Citation: D. Hofstetter et al., Realization of a complex-coupled InGaN/GaN-based optically pumped multiple-quantum-well distributed-feedback laser, APPL PHYS L, 76(17), 2000, pp. 2337-2339
Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates
Authors: Bour, DP Nickel, NM Van de Walle, CG Kneissl, MS Krusor, BS Mei, P Johnson, NM
Citation: Dp. Bour et al., Polycrystalline nitride semiconductor light-emitting diodes fabricated on quartz substrates, APPL PHYS L, 76(16), 2000, pp. 2182-2184
Midinfrared emission from InGaN/GaN-based light-emitting diodes
Authors: Hofstetter, D Faist, J Bour, DP
Citation: D. Hofstetter et al., Midinfrared emission from InGaN/GaN-based light-emitting diodes, APPL PHYS L, 76(12), 2000, pp. 1495-1497
MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
Authors: Bour, DP Kneissl, M Hofstetter, D Romano, LT McCluskey, M Van de Walle, CG Krusor, BS Dunnrowicz, C Donaldson, R Walker, J Johnson, NM
Citation: Dp. Bour et al., MOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes, MAT SCI E B, 59(1-3), 1999, pp. 33-38
Energy level alignments in strained-layer GaInP/AlGaInP laser diodes: Model solid theory analysis of pressure-photoluminescence experiments
Authors: Ritter, TM Weinstein, BA Viturro, RE Bour, DP
Citation: Tm. Ritter et al., Energy level alignments in strained-layer GaInP/AlGaInP laser diodes: Model solid theory analysis of pressure-photoluminescence experiments, PHYS ST S-B, 211(2), 1999, pp. 869-883
DX centers in AlGaN
Authors: McCluskey, MD van de Walle, CG Johnson, NM Bour, DP Kneissl, M
Citation: Md. Mccluskey et al., DX centers in AlGaN, INT J MOD B, 13(11), 1999, pp. 1363-1378
Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure
Authors: Kneissl, M Bour, DP Van de Walle, CG Romano, LT Northrup, JE Wood, RM Teepe, M Schmidt, T Johnson, NM
Citation: M. Kneissl et al., Room-temperature continuous-wave operation of InGaN multiple quantum well laser diodes with an asymmetric waveguide structure, PHYS ST S-A, 176(1), 1999, pp. 49-52
Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources
Authors: Floyd, PD Treat, DW Bour, DP
Citation: Pd. Floyd et al., Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources, ELECTR LETT, 35(24), 1999, pp. 2120-2121
Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure
Authors: Kneissl, M Bour, DP Van de Walle, CG Romano, LT Northrup, JE Wood, RM Teepe, M Johnson, NM
Citation: M. Kneissl et al., Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure, APPL PHYS L, 75(4), 1999, pp. 581-583
Phase separation in InGaN multiple quantum wells annealed at high nitrogenpressures
Authors: Romano, LT McCluskey, MD Van de Walle, CG Northrup, JE Bour, DP Kneissl, M Suski, T Jun, J
Citation: Lt. Romano et al., Phase separation in InGaN multiple quantum wells annealed at high nitrogenpressures, APPL PHYS L, 75(25), 1999, pp. 3950-3952
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
Authors: Wong, WS Sands, T Cheung, NW Kneissl, M Bour, DP Mei, P Romano, LT Johnson, NM
Citation: Ws. Wong et al., Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off, APPL PHYS L, 75(10), 1999, pp. 1360-1362
Stripe-width dependence of threshold current for gain-guided AlGaInN laserdiodes
Authors: Bour, DP Kneissl, M Romano, LT Donaldson, RM Dunnrowicz, CJ Johnson, NM Evans, GA
Citation: Dp. Bour et al., Stripe-width dependence of threshold current for gain-guided AlGaInN laserdiodes, APPL PHYS L, 74(3), 1999, pp. 404-406
Risultati: 1-21 |