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Authors: Pinho, NMC Torres, VJB Jones, R Briddon, PR Oberg, S
Citation: Nmc. Pinho et al., Mg-H and Be-H complexes in cubic boron nitride, J PHYS-COND, 13(40), 2001, pp. 8951-8956

Authors: Ewels, CP Wilson, NT Heggie, MI Jones, R Briddon, PR
Citation: Cp. Ewels et al., Graphitization at diamond dislocation cores, J PHYS-COND, 13(40), 2001, pp. 8965-8972

Authors: Goss, JP Hourahine, B Jones, R Heggie, MI Briddon, PR
Citation: Jp. Goss et al., p-type surface doping of diamond: a first-principles study, J PHYS-COND, 13(40), 2001, pp. 8973-8978

Authors: Coomer, BJ Goss, JP Jones, R Oberg, S Briddon, PR
Citation: Bj. Coomer et al., Identification of the tetra-interstitial in silicon, J PHYS-COND, 13(1), 2001, pp. L1-L7

Authors: Goss, JP Coomer, BJ Jones, R Shaw, TD Briddon, PR Oberg, S
Citation: Jp. Goss et al., Interstitial aggregates in diamond, DIAM RELAT, 10(3-7), 2001, pp. 434-438

Authors: Fall, CJ Jones, R Briddon, PR Oberg, S
Citation: Cj. Fall et al., Electronic and vibrational properties of Mg- and O-related complexes in GaN, MAT SCI E B, 82(1-3), 2001, pp. 88-90

Authors: Cusack, MA Briddon, PR North, SM Kitchin, MR Jaros, M
Citation: Ma. Cusack et al., Si/Ge self-assembled quantum dots for infrared applications, SEMIC SCI T, 16(11), 2001, pp. L81-L84

Authors: Lavrov, EV Fanciulli, M Kaukonen, M Jones, R Briddon, PR
Citation: Ev. Lavrov et al., Carbon-tin defects in silicon - art. no. 125212, PHYS REV B, 6412(12), 2001, pp. 5212

Authors: Goss, JP Coomer, BJ Jones, R Shaw, TD Briddon, PR Rayson, M Oberg, S
Citation: Jp. Goss et al., Self-interstitial aggregation in diamond - art. no. 195208, PHYS REV B, 6319(19), 2001, pp. 5208

Authors: Latham, CD Jones, R Oberg, S Briddon, PR
Citation: Cd. Latham et al., Density-functional calculations of carbon doping in III-V compound semiconductors - art. no. 155202, PHYS REV B, 6315(15), 2001, pp. 5202

Authors: Coutinho, J Jones, R Murin, LI Markevich, VP Lindstrom, JL Oberg, S Briddon, PR
Citation: J. Coutinho et al., Thermal double donors and quantum dots - art. no. 235501, PHYS REV L, 8723(23), 2001, pp. 5501

Authors: Blumenau, AT Jones, R Oberg, S Briddon, PR Frauenheim, T
Citation: At. Blumenau et al., Dislocation related photoluminescence in silicon - art. no. 187404, PHYS REV L, 8718(18), 2001, pp. 7404

Authors: Goss, JP Jones, R Shaw, TD Rayson, MJ Briddon, PR
Citation: Jp. Goss et al., First principles study of the of the self-interstitial defect in diamond, PHYS ST S-A, 186(2), 2001, pp. 215-220

Authors: Goss, JP Jones, R Heggie, MI Ewels, CP Briddon, PR Oberg, S
Citation: Jp. Goss et al., First principles studies of H in diamond, PHYS ST S-A, 186(2), 2001, pp. 263-268

Authors: Blumenau, AT Jones, R Oberg, S Frauenheim, T Briddon, PR
Citation: At. Blumenau et al., Optical bands related to dislocations in Si, J PHYS-COND, 12(49), 2000, pp. 10123-10129

Authors: Blumenau, AT Elsner, J Jones, R Heggie, MI Oberg, S Frauenheim, T Briddon, PR
Citation: At. Blumenau et al., Dislocations in hexagonal and cubic GaN, J PHYS-COND, 12(49), 2000, pp. 10223-10233

Authors: Goss, JP Coomer, BJ Jones, R Fall, CJ Latham, CD Briddon, PR Oberg, S
Citation: Jp. Goss et al., Small aggregates of interstitials and models for platelets in diamond, J PHYS-COND, 12(49), 2000, pp. 10257-10261

Authors: Heggie, MI Jenkins, S Ewels, CP Jemmer, P Jones, R Briddon, PR
Citation: Mi. Heggie et al., Theory of dislocations in diamond and silicon and their interaction with hydrogen, J PHYS-COND, 12(49), 2000, pp. 10263-10270

Authors: Jones, R Coomer, BJ Goss, JP Oberg, S Briddon, PR
Citation: R. Jones et al., Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si, PHYS ST S-B, 222(1), 2000, pp. 133-140

Authors: Briddon, PR Jones, R
Citation: Pr. Briddon et R. Jones, LDA calculations using a basis of Gaussian orbitals, PHYS ST S-B, 217(1), 2000, pp. 131-171

Authors: Leary, P Ewels, CP Heggie, MI Jones, R Briddon, PR
Citation: P. Leary et al., Modelling carbon for industry: Radiolytic oxidation, PHYS ST S-B, 217(1), 2000, pp. 429-447

Authors: Larsen, AN Goubet, JJ Mejlholm, P Christensen, JS Fanciulli, M Gunnlaugsson, HP Weyer, G Petersen, JW Resende, A Kaukonen, M Jones, R Oberg, S Briddon, PR Svensson, BG Lindstrom, JL Dannefaer, S
Citation: An. Larsen et al., Tin-vacancy acceptor levels in electron-irradiated n-type silicon, PHYS REV B, 62(7), 2000, pp. 4535-4544

Authors: Lavrov, EV Briddon, PR Nielsen, BB Hourahine, B Jones, R Oberg, S Briddon, PR
Citation: Ev. Lavrov et al., Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon, PHYS REV B, 62(19), 2000, pp. 12859-12867

Authors: Coutinho, J Jones, R Briddon, PR Oberg, S
Citation: J. Coutinho et al., Oxygen and dioxygen centers in Si and Ge: Density-functional calculations, PHYS REV B, 62(16), 2000, pp. 10824-10840

Authors: Lavrov, EV Nielsen, BB Byberg, JR Hourahine, B Jones, R Oberg, S Briddon, PR
Citation: Ev. Lavrov et al., Local vibrational modes of two neighboring substitutional carbon atoms in silicon, PHYS REV B, 62(1), 2000, pp. 158-165
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