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Jenkins, S
Ewels, CP
Jemmer, P
Jones, R
Briddon, PR
Citation: Mi. Heggie et al., Theory of dislocations in diamond and silicon and their interaction with hydrogen, J PHYS-COND, 12(49), 2000, pp. 10263-10270
Authors:
Jones, R
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Briddon, PR
Citation: R. Jones et al., Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si, PHYS ST S-B, 222(1), 2000, pp. 133-140
Authors:
Larsen, AN
Goubet, JJ
Mejlholm, P
Christensen, JS
Fanciulli, M
Gunnlaugsson, HP
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Petersen, JW
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Kaukonen, M
Jones, R
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Briddon, PR
Svensson, BG
Lindstrom, JL
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Citation: An. Larsen et al., Tin-vacancy acceptor levels in electron-irradiated n-type silicon, PHYS REV B, 62(7), 2000, pp. 4535-4544
Authors:
Lavrov, EV
Briddon, PR
Nielsen, BB
Hourahine, B
Jones, R
Oberg, S
Briddon, PR
Citation: Ev. Lavrov et al., Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon, PHYS REV B, 62(19), 2000, pp. 12859-12867