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Results: 1-11 |
Results: 11
Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions
Authors: Monsieur, F Vincent, E Roy, D Bruyere, S Pananakakis, G Ghibaudo, G
Citation: F. Monsieur et al., Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions, MICROEL REL, 41(9-10), 2001, pp. 1295-1300
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Authors: Bruyere, S Monsieur, F Roy, D Vincent, E Ghibaudo, G
Citation: S. Bruyere et al., Failures in ultrathin oxides: Stored energy or carrier energy driven?, MICROEL REL, 41(9-10), 2001, pp. 1367-1372
Body effect induced wear-out acceleration in ultra-thin oxides
Authors: Bruyere, S Roy, D Robilliart, E Vincent, E Ghibaudo, G
Citation: S. Bruyere et al., Body effect induced wear-out acceleration in ultra-thin oxides, MICROEL REL, 41(7), 2001, pp. 1031-1034
Gate dielectrics for ultimate CMOS technologies - Limitations and alternative solutions
Authors: Ghibaudo, G Clerc, R Vincent, E Bruyere, S Autran, JL
Citation: G. Ghibaudo et al., Gate dielectrics for ultimate CMOS technologies - Limitations and alternative solutions, CR AC S IV, 1(7), 2000, pp. 911-927
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
Authors: Ghibaudo, G Bruyere, S Devoivre, T DeSalvo, B Vincent, E
Citation: G. Ghibaudo et al., Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics, IEEE SEMIC, 13(2), 2000, pp. 152-158
Wet or dry ultrathin oxides: impact on gate oxide and device reliability
Authors: Bruyere, S Guyader, F De Coster, W Vincent, E Saadeddine, M Revil, N Ghibaudo, G
Citation: S. Bruyere et al., Wet or dry ultrathin oxides: impact on gate oxide and device reliability, MICROEL REL, 40(4-5), 2000, pp. 691-695
Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)
Authors: Ghibaudo, G Riess, P Bruyere, S DeSalvo, B Jahan, C Scarpa, A Pananakakis, G Vincent, E
Citation: G. Ghibaudo et al., Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB), MICROEL ENG, 49(1-2), 1999, pp. 41-50
Model for the oxide thickness dependence of SILC generation based on anodehole injection process
Authors: Jahan, C Bruyere, S Ghibaudo, G Vincent, E Barla, K
Citation: C. Jahan et al., Model for the oxide thickness dependence of SILC generation based on anodehole injection process, MICROEL REL, 39(6-7), 1999, pp. 791-795
Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides
Authors: Bruyere, S Roy, D Vincent, E Ghibaudo, G
Citation: S. Bruyere et al., Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides, MICROEL REL, 39(6-7), 1999, pp. 815-820
Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling
Authors: Bruyere, S Vincent, E Ghibaudo, G
Citation: S. Bruyere et al., Stress-induced leakage current in very thin dielectric layers: some limitations to reliability extrapolation modeling, MICROEL REL, 39(2), 1999, pp. 209-214
Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm)
Authors: Kamoulakos, G Kelaidis, C Papadas, C Vincent, E Bruyere, S Ghibaudo, G Pananakakis, G Mortini, P Ghidini, G
Citation: G. Kamoulakos et al., Unified model for breakdown in thin and ultrathin gate oxides (12-5 nm), J APPL PHYS, 86(9), 1999, pp. 5131-5140
Risultati: 1-11 |