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Results: 1-25/31
Authors:
RAJAGOPALAN G
MAHADEV V
CALE TS
Citation: G. Rajagopalan et al., SURFACE EVOLUTION DURING SEMICONDUCTOR PROCESSING, VLSI design (Print), 6(1-4), 1998, pp. 379-384
Authors:
GOBBERT MK
CALE TS
RINGHOFER CA
Citation: Mk. Gobbert et al., THE COMBINATION OF EQUIPMENT SCALE AND FEATURE SCALE MODELS FOR CHEMICAL-VAPOR-DEPOSITION VIA A HOMOGENIZATION TECHNIQUE, VLSI design (Print), 6(1-4), 1998, pp. 399-403
DEPOSITION RATE DEPENDENCE OF STEP COVERAGE OF SPUTTER-DEPOSITED ALUMINUM-(1.5-PERCENT) COPPER-FILMS
Authors:
TAYLOR DS
JAIN MK
CALE TS
Citation: Ds. Taylor et al., DEPOSITION RATE DEPENDENCE OF STEP COVERAGE OF SPUTTER-DEPOSITED ALUMINUM-(1.5-PERCENT) COPPER-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(5), 1998, pp. 3123-3126
Authors:
YANG D
JONNALAGADDA R
ROGERS BR
HILLMAN JT
FOSTER RF
CALE TS
Citation: D. Yang et al., TEXTURE AND SURFACE-ROUGHNESS OF PRCVD ALUMINUM FILMS, Thin solid films, 332(1-2), 1998, pp. 312-318
Authors:
SRINIVASAMURTHY C
WANG D
BEAUDOIN SP
BIBBY T
HOLLAND K
CALE TS
Citation: C. Srinivasamurthy et al., STRESS-DISTRIBUTION IN CHEMICAL-MECHANICAL POLISHING, Thin solid films, 308, 1997, pp. 533-537
Authors:
YANG D
JONNALAGADDA R
MAHADEV V
CALE TS
HILLMAN JT
FOSTER RF
ROGERS BR
Citation: D. Yang et al., SOME EFFECTS OF TEMPERATURE RAMPING ON METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITED AL FILM NUCLEATION, Thin solid films, 308, 1997, pp. 615-620
Authors:
GOBBERT MK
MERCHANT TP
BORUCKI LJ
CALE TS
Citation: Mk. Gobbert et al., A MULTISCALE SIMULATOR FOR LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3945-3951
Authors:
LIAO H
CALE TS
Citation: H. Liao et Ts. Cale, SIMULATIONS OF METAL THIN-FILM THERMAL FLOW PROCESSES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2615-2622
Authors:
VIRMANI M
LEVEDAKIS DA
RAUPP GB
CALE TS
Citation: M. Virmani et al., FEATURE SCALE SIMULATION STUDIES OF TEOS-SOURCED REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE - ROLE OF OXYGEN-ATOM RECOMBINATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 977-983
Authors:
ROGERS BR
CALE TS
CHANG YK
Citation: Br. Rogers et al., SIMULATION AND EXPERIMENTAL-STUDY OF REEMISSION DURING SPUTTER-DEPOSITION OF TI-W FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 1142-1146
Authors:
CALE TS
Citation: Ts. Cale, CONFORMALITY AND COMPOSITION OF FILMS DEPOSITED AT LOW-PRESSURES, Chemical engineering communications, 153, 1996, pp. 261-273
Authors:
GOBBERT MK
RINGHOFER CA
CALE TS
Citation: Mk. Gobbert et al., MESOSCOPIC SCALE MODELING OF MICROLOADING DURING LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 143(8), 1996, pp. 2624-2631
Authors:
THALLIKAR G
LIAO H
CALE TS
MYERS FR
Citation: G. Thallikar et al., EXPERIMENTAL AND SIMULATION STUDIES OF THERMAL FLOW OF BOROPHOSPHOSILICATE AND PHOSPHOSILICATE GLASSES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1875-1878
Authors:
LIN Z
CALE TS
Citation: Z. Lin et Ts. Cale, FLUX DISTRIBUTIONS AND DEPOSITION PROFILES FROM HEXAGONAL COLLIMATORSDURING SPUTTER-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 2183-2188
Authors:
RAUPP GB
LEVEDAKIS DA
CALE TS
Citation: Gb. Raupp et al., CONFORMALITY OF SIO2-FILMS FROM TETRAETHOXYSILANE-SOURCED REMOTE MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 676-680
Authors:
RAJAGOPALAN G
DREYER ML
THEODORE ND
CALE TS
Citation: G. Rajagopalan et al., IMPROVING ELECTROMIGRATION RELIABILITY IN AL-ALLOY LINES, Thin solid films, 270(1-2), 1995, pp. 439-444
Authors:
LIN Z
CALE TS
Citation: Z. Lin et Ts. Cale, SIMULATION OF COLLIMATED FLUX DISTRIBUTIONS DURING PHYSICAL VAPOR-DEPOSITION, Thin solid films, 270(1-2), 1995, pp. 627-631
Authors:
ROGERS BR
TRACY CJ
CALE TS
Citation: Br. Rogers et al., COMPOSITIONAL VARIATION IN SPUTTERED TI-W FILMS DUE TO REEMISSION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2980-2984
Authors:
LIAO H
CALE TS
Citation: H. Liao et Ts. Cale, LOW-KNUDSEN-NUMBER TRANSPORT AND DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1020-1026
Authors:
LIAO H
CALE TS
Citation: H. Liao et Ts. Cale, NUMERICAL SIMULATIONS OF THIN-FILM THERMAL FLOW, Thin solid films, 253(1-2), 1994, pp. 419-424
Authors:
BAMMI R
CALE TS
GRIVNA G
Citation: R. Bammi et al., DEVELOPMENT OF A GATE METAL ETCH PROCESS FOR GALLIUM-ARSENIDE WAFERS, Thin solid films, 253(1-2), 1994, pp. 501-507
Authors:
MYERS FR
PETERS MW
RAMASWAMI M
CALE TS
Citation: Fr. Myers et al., TRANSPORT THROUGH MULTICOMPONENT DUAL-FREQUENCY PLASMA SHEATHS, Thin solid films, 253(1-2), 1994, pp. 522-528
Authors:
MYERS FR
RAMASWAMI M
CALE TS
Citation: Fr. Myers et al., PREDICTION OF ION ENERGY AND ANGULAR-DISTRIBUTIONS IN SINGLE AND DUAL-FREQUENCY PLASMAS, Journal of the Electrochemical Society, 141(5), 1994, pp. 1313-1320
Authors:
CALE TS
JAIN MK
TAYLOR DS
DUFFIN RL
TRACY CJ
Citation: Ts. Cale et al., MODEL FOR SURFACE-DIFFUSION OF ALUMINUM-(1.5-PERCENT) COPPER DURING SPUTTER DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 311-318
Authors:
RAUPP GB
LEVEDAKIS DA
CALE TS
Citation: Gb. Raupp et al., PREDICTING INTRAWAFER FILM THICKNESS UNIFORMITY IN AN ULTRALOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 3053-3061