Authors:
SNOEKS E
MARSHALL T
PETRUZZELLO J
PASHLEY MD
CHAO LL
CARGILL GS
Citation: E. Snoeks et al., DIFFUSION LENGTHS OF CARRIERS IN N-TYPE AND P-TYPE ZNMGSSE CLADDING LAYERS OF GREEN LASER-DIODES, Journal of applied physics, 84(7), 1998, pp. 3611-3616
Authors:
LEVY M
OSGOOD RM
LIU R
CROSS LE
CARGILL GS
KUMAR A
BAKHRU H
Citation: M. Levy et al., FABRICATION OF SINGLE-CRYSTAL LITHIUM-NIOBATE FILMS BY CRYSTAL ION SLICING, Applied physics letters, 73(16), 1998, pp. 2293-2295
Authors:
CHAO LL
CARGILL GS
MARSHALL T
SNOEKS E
PETRUZZELLO J
PASHLEY M
Citation: Ll. Chao et al., SPECTRAL SHIFTS ASSOCIATED WITH DARK LINE DEFECTS IN DEGRADED II-VI LASER-DIODES, Applied physics letters, 72(14), 1998, pp. 1754-1756
Citation: Pc. Wang et al., ELECTROMIGRATION-INDUCED STRESS IN ALUMINUM CONDUCTOR LINES MEASURED BY X-RAY MICRODIFFRACTION, Applied physics letters, 72(11), 1998, pp. 1296-1298
Citation: Pc. Wang et Gs. Cargill, OPTIMIZATION OF PHOSPHOR SCREENS FOR CHARGE-COUPLED-DEVICE BASED DETECTORS AND 7-34 KEV X-RAYS, Journal of applied physics, 81(3), 1997, pp. 1031-1041
Authors:
METZGER TH
HAJYAHYA K
PEISL J
WENDEL M
LORENZ H
KOTTHAUS JP
CARGILL GS
Citation: Th. Metzger et al., NANOMETER SURFACE GRATINGS ON SI(100) CHARACTERIZED BY X-RAY-SCATTERING UNDER GRAZING-INCIDENCE AND ATOMIC-FORCE MICROSCOPY, Journal of applied physics, 81(3), 1997, pp. 1212-1216
Authors:
CHAO LL
CARGILL GS
LEVY M
OSGOOD RM
MCLANE GF
Citation: Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING (VOL 70, PG 408, 1997), Applied physics letters, 71(4), 1997, pp. 558-558
Authors:
CHAO LL
CARGILL GS
KOTHANDARAMAN C
MARSHALL T
SNOEKS E
BUIJS M
HABERERN K
PETRUZZELLO J
HAUGEN GM
LAW KK
Citation: Ll. Chao et al., ACTIVATION-ENERGY OF NONRADIATIVE PROCESSES IN DEGRADED II-VI LASER-DIODES, Applied physics letters, 70(5), 1997, pp. 535-537
Authors:
CHAO LL
CARGILL GS
LEVY M
OSGOOD RM
MCLANE GF
Citation: Ll. Chao et al., CATHODOLUMINESCENCE STUDY OF GAAS QUANTUM-WELLS AND OF SUBMICRON DOTSFABRICATED BY MAGNETRON REACTIVE ION ETCHING, Applied physics letters, 70(4), 1997, pp. 408-410
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