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Results: 1-25/27
Authors:
WEN HJ
LUDEKE R
NEWNS DM
LO SH
CARTIER E
Citation: Hj. Wen et al., ATOMIC-SCALE STUDIES OF ELECTRON-TRANSPORT THROUGH MOS STRUCTURES, Applied surface science, 123, 1998, pp. 418-428
Authors:
CARTIER E
Citation: E. Cartier, CHARACTERIZATION OF THE HOT-ELECTRON-INDUCED DEGRADATION IN THIN SIO2GATE OXIDES, Microelectronics and reliability, 38(2), 1998, pp. 201-211
Authors:
UREN MJ
NAYAR V
BRUNSON KM
ANTHONY CJ
STATHIS JH
CARTIER E
Citation: Mj. Uren et al., INTERFACE STATE CAPTURE CROSS-SECTION MEASUREMENTS ON VACUUM ANNEALEDAND RADIATION DAMAGED SI-SIO2 SURFACES, Journal of the Electrochemical Society, 145(2), 1998, pp. 683-689
Authors:
POPPELLER M
CARTIER E
TROMP RM
Citation: M. Poppeller et al., HOT-ELECTRON EMISSION LITHOGRAPHY, Applied physics letters, 73(19), 1998, pp. 2835-2837
Authors:
CARTIER E
TSANG JC
FISCHETTI MV
BUCHANAN DA
Citation: E. Cartier et al., LIGHT-EMISSION DURING DIRECT AND FOWLER-NORDHEIM TUNNELING IN ULTRA-THIN MOS TUNNEL-JUNCTIONS, Microelectronic engineering, 36(1-4), 1997, pp. 103-106
Authors:
UREN MJ
BRUNSON KM
STATHIS JH
CARTIER E
Citation: Mj. Uren et al., POTENTIAL FLUCTUATIONS DUE TO P-B CENTERS AT THE SI SIO2 INTERFACE/, Microelectronic engineering, 36(1-4), 1997, pp. 219-222
Authors:
BUCHANAN DA
STATHIS JH
CARTIER E
DIMARIA DJ
Citation: Da. Buchanan et al., ON THE RELATIONSHIP BETWEEN STRESS-INDUCED LEAKAGE CURRENTS AND CATASTROPHIC BREAKDOWN IN ULTRA-THIN SIO2 BASED DIELECTRICS, Microelectronic engineering, 36(1-4), 1997, pp. 329-332
Authors:
LUDEKE R
WEN HJ
CARTIER E
Citation: R. Ludeke et al., STRESSING AND HIGH-FIELD TRANSPORT STUDIES ON DEVICE-GRADE SIO2 BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2855-2863
Authors:
JURLOW E
ORVIETO M
GUERRERO J
BEZANILLA CG
COX P
CARTIER E
SILVA M
Citation: E. Jurlow et al., DELAYED-HYPERSENSITIVITY SKIN TESTING IN CHILEAN YOUNG-ADULTS, Revista Medica de Chile, 124(1), 1996, pp. 61-69
Authors:
MANKOS M
TROMP RM
REUTER MC
CARTIER E
Citation: M. Mankos et al., IMAGING HOT-ELECTRON EMISSION FROM METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Physical review letters, 76(17), 1996, pp. 3200-3203
Authors:
ANGELO S
IRARRAZABAL C
CARTIER E
DEVES R
Citation: S. Angelo et al., AMINO-ACID-TRANSPORT SYSTEM Y(- INTERACTION BETWEEN NEUTRAL AMINO-ACIDS AND MONOVALENT CATIONS()L OF HUMAN ERYTHROCYTES ), Journal of physiology, 493P, 1996, pp. 115-115
Authors:
UREN MJ
STATHIS JH
CARTIER E
Citation: Mj. Uren et al., CONDUCTANCE MEASUREMENTS ON P-B CENTERS AT THE (111)SI-SIO2 INTERFACE, Journal of applied physics, 80(7), 1996, pp. 3915-3922
Authors:
DIMARIA DJ
CARTIER E
BUCHANAN DA
Citation: Dj. Dimaria et al., ANODE HOLE INJECTION AND TRAPPING IN SILICON DIOXIDE, Journal of applied physics, 80(1), 1996, pp. 304-317
Authors:
CARTIER E
STATHIS JH
Citation: E. Cartier et Jh. Stathis, HOT-ELECTRON-INDUCED PASSIVATION OF SILICON DANGLING BONDS AT THE SI(111) SIO2 INTERFACE/, Applied physics letters, 69(1), 1996, pp. 103-105
Authors:
LUDEKE R
BAUER A
CARTIER E
Citation: R. Ludeke et al., HOT-ELECTRON TRANSPORT THROUGH METAL-OXIDE-SEMICONDUCTOR STRUCTURES STUDIED BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1830-1840
Authors:
CARTIER E
STATHIS JH
Citation: E. Cartier et Jh. Stathis, ATOMIC HYDROGEN-INDUCED DEGRADATION OF THE SI SIO2 STRUCTURE/, Microelectronic engineering, 28(1-4), 1995, pp. 3-10
Authors:
STAHLBUSH RE
CARTIER E
BUCHANAN DA
Citation: Re. Stahlbush et al., ANOMALOUS POSITIVE CHARGE FORMATION BY ATOMIC-HYDROGEN EXPOSURE, Microelectronic engineering, 28(1-4), 1995, pp. 15-18
Authors:
CARTIER E
BUCHANAN DA
STATHIS JH
DIMARIA DJ
Citation: E. Cartier et al., ATOMIC HYDROGEN-INDUCED DEGRADATION OF THIN SIO2 GATE OXIDES, Journal of non-crystalline solids, 187, 1995, pp. 244-247
Authors:
DIMARIA DJ
CARTIER E
Citation: Dj. Dimaria et E. Cartier, MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDEFILMS, Journal of applied physics, 78(6), 1995, pp. 3883-3894
Authors:
LUDEKE R
BAUER A
CARTIER E
Citation: R. Ludeke et al., HOT-ELECTRON TRANSPORT IN SIO2 PROBED WITH A SCANNING TUNNEL MICROSCOPE, Applied physics letters, 66(6), 1995, pp. 730-732
Authors:
ARNOLD D
CARTIER E
DIMARIA DJ
Citation: D. Arnold et al., THEORY OF HIGH-FIELD ELECTRON-TRANSPORT AND IMPACT IONIZATION IN SILICON DIOXIDE, Physical review. B, Condensed matter, 49(15), 1994, pp. 10278-10297
Authors:
STATHIS JH
CARTIER E
Citation: Jh. Stathis et E. Cartier, ATOMIC-HYDROGEN REACTIONS WITH P(B) CENTERS AT THE (100) SI SIO2 INTERFACE/, Physical review letters, 72(17), 1994, pp. 2745-2748
Authors:
STAHLBUSH RE
CARTIER E
Citation: Re. Stahlbush et E. Cartier, INTERFACE DEFECT FORMATION IN MOSFETS BY ATOMIC-HYDROGEN EXPOSURE, IEEE transactions on nuclear science, 41(6), 1994, pp. 1844-1853
Authors:
CARTIER E
BUCHANAN DA
DUNN GJ
Citation: E. Cartier et al., ATOMIC HYDROGEN-INDUCED INTERFACE DEGRADATION OF REOXIDIZED-NITRIDED SILICON DIOXIDE ON SILICON, Applied physics letters, 64(7), 1994, pp. 901-903
Authors:
CARTIER E
DIMARIA DJ
Citation: E. Cartier et Dj. Dimaria, HOT-ELECTRON DYNAMICS IN SIO2 AND THE DEGRADATION OF THE SI SIO2-INTERFACE/, Microelectronic engineering, 22(1-4), 1993, pp. 207-210