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Results: 1-25 | 26-29
Results: 1-25/29
EFFECT OF HYDROGENATION ON MISFIT DISLOCATIONS IN SIGE SI STRUCTURES FOR PHOTOVOLTAIC APPLICATIONS/
Authors: DAAMI A BREMOND G CAYMAX M POORTMANS J
Citation: A. Daami et al., EFFECT OF HYDROGENATION ON MISFIT DISLOCATIONS IN SIGE SI STRUCTURES FOR PHOTOVOLTAIC APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1737-1739
EPITAXIAL STAIRCASE STRUCTURE FOR THE CALIBRATION OF ELECTRICAL CHARACTERIZATION TECHNIQUES
Authors: CLARYSSE T CAYMAX M DEWOLF P TRENKLER T VANDERVORST W MCMURRAY JS KIM J WILLIAMS CC CLARK JG NEUBAUER G
Citation: T. Clarysse et al., EPITAXIAL STAIRCASE STRUCTURE FOR THE CALIBRATION OF ELECTRICAL CHARACTERIZATION TECHNIQUES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 394-400
POROUS SILICON IN CRYSTALLINE SILICON SOLAR-CELLS - A REVIEW AND THE EFFECT ON THE INTERNAL QUANTUM EFFICIENCY
Authors: STALMANS L POORTMANS J BENDER H CAYMAX M SAID K VAZSONYI E NIJS J MERTENS R
Citation: L. Stalmans et al., POROUS SILICON IN CRYSTALLINE SILICON SOLAR-CELLS - A REVIEW AND THE EFFECT ON THE INTERNAL QUANTUM EFFICIENCY, Progress in photovoltaics, 6(4), 1998, pp. 233-246
IR BOLOMETERS MADE OF POLYCRYSTALLINE SILICON-GERMANIUM
Authors: SEDKY S FIORINI P CAYMAX M VERBIST A BAERT C
Citation: S. Sedky et al., IR BOLOMETERS MADE OF POLYCRYSTALLINE SILICON-GERMANIUM, Sensors and actuators. A, Physical, 66(1-3), 1998, pp. 193-199
CHARACTERIZATION OF BOLOMETERS BASED ON POLYCRYSTALLINE SILICON-GERMANIUM ALLOYS
Authors: SEDKY S FIORINI P CAYMAX M BAERT C HERMANS L MERTENS R
Citation: S. Sedky et al., CHARACTERIZATION OF BOLOMETERS BASED ON POLYCRYSTALLINE SILICON-GERMANIUM ALLOYS, IEEE electron device letters, 19(10), 1998, pp. 376-378
CONTRAST REVERSAL IN SCANNING CAPACITANCE MICROSCOPY IMAGING
Authors: STEPHENSON R VERHULST A DEWOLF P CAYMAX M VANDERVORST W
Citation: R. Stephenson et al., CONTRAST REVERSAL IN SCANNING CAPACITANCE MICROSCOPY IMAGING, Applied physics letters, 73(18), 1998, pp. 2597-2599
DEGRADATION OF SIGE DEVICES BY PROTON IRRADIATION
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y SUNAGA H NASHIYAMA I UWATOKO Y POORTMANS J CAYMAX M
Citation: H. Ohyama et al., DEGRADATION OF SIGE DEVICES BY PROTON IRRADIATION, Radiation physics and chemistry, 50(4), 1997, pp. 341-346
PROTON IRRADIATION EFFECTS ON THE PERFORMANCE OF SI1-XGEX DEVICES
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K TOKUYAMA J HAKATA T KUDOU T SUNAGA H NASHIYAMA I UWATOKO Y POORTMANS J CAYMAX M
Citation: H. Ohyama et al., PROTON IRRADIATION EFFECTS ON THE PERFORMANCE OF SI1-XGEX DEVICES, Physica status solidi. a, Applied research, 158(1), 1996, pp. 325-332
EFFECT OF RADIATION SOURCE ON THE DEGRADATION IN IRRADIATED SI1-XGEX EPITAXIAL DEVICES
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H POORTMANS J CAYMAX M
Citation: H. Ohyama et al., EFFECT OF RADIATION SOURCE ON THE DEGRADATION IN IRRADIATED SI1-XGEX EPITAXIAL DEVICES, Physica status solidi. a, Applied research, 155(1), 1996, pp. 147-155
DEGRADATION AND RECOVERY OF PROTON-IRRADIATED SI1-XGEX EPITAXIAL DEVICES
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H NASHIYAMA I UWATOKO Y POORTMAN J CAYMAX M
Citation: H. Ohyama et al., DEGRADATION AND RECOVERY OF PROTON-IRRADIATED SI1-XGEX EPITAXIAL DEVICES, IEEE transactions on nuclear science, 43(6), 1996, pp. 3089-3096
DEGRADATION OF SI1-XGEX EPITAXIAL DEVICES BY PROTON IRRADIATION
Authors: OHYAMA H HAYAMA K VANHELLEMONT J POORTMANS J CAYMAX M TAKAMI Y SUNAGA H NASHIYAMA I UWATOKO Y
Citation: H. Ohyama et al., DEGRADATION OF SI1-XGEX EPITAXIAL DEVICES BY PROTON IRRADIATION, Applied physics letters, 69(16), 1996, pp. 2429-2431
IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., IRRADIATION-INDUCED LATTICE-DEFECTS IN SI1-XGEX DEVICES AND THEIR EFFECT ON DEVICE PERFORMANCE, Materials science and technology, 11(4), 1995, pp. 429-435
SPECTROELLIPSOMETRIC CHARACTERIZATION OF THIN EPITAXIAL SI(1-X)GE(X)LAYERS
Authors: LIBEZNY M CAYMAX M BRABLEC A KUBENA J HOLY V POORTMANS J NIJS J VANHELLEMONT J
Citation: M. Libezny et al., SPECTROELLIPSOMETRIC CHARACTERIZATION OF THIN EPITAXIAL SI(1-X)GE(X)LAYERS, Materials science and technology, 11(10), 1995, pp. 1065-1070
FORMATION OF COSI2 ON STRAINED SI0.8GE0.2 USING A SACRIFICIAL SI LAYER
Authors: DONATON RA KOLODINSKI S CAYMAX M ROUSSEL P BENDER H BRIJS B MAEX K
Citation: Ra. Donaton et al., FORMATION OF COSI2 ON STRAINED SI0.8GE0.2 USING A SACRIFICIAL SI LAYER, Applied surface science, 91(1-4), 1995, pp. 77-81
SI(100) EPITAXY BY LOW-TEMPERATURE UHV-CVD - AFM STUDY OF THE INITIAL-STAGES OF GROWTH
Authors: CHOLLET F ANDRE E VANDERVORST W CAYMAX M
Citation: F. Chollet et al., SI(100) EPITAXY BY LOW-TEMPERATURE UHV-CVD - AFM STUDY OF THE INITIAL-STAGES OF GROWTH, Journal of crystal growth, 157(1-4), 1995, pp. 161-167
DEGRADATION OF SI1-XGEX EPITAXIAL HETEROJUNCTION BIPOLAR-TRANSISTORS BY 1-MEV FAST-NEUTRONS
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H POORTMANS J CAYMAX M
Citation: H. Ohyama et al., DEGRADATION OF SI1-XGEX EPITAXIAL HETEROJUNCTION BIPOLAR-TRANSISTORS BY 1-MEV FAST-NEUTRONS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1550-1557
ANOMALOUS LOW-TEMPERATURE DOPANT DIFFUSION FROM IN-SITU DOPED POLYCRYSTALLINE AND EPITAXIAL SI LAYERS INTO THE MONOCRYSTALLINE SI SUBSTRATE
Authors: CAYMAX M BAERT K POORTMANS J VANDERVORST W
Citation: M. Caymax et al., ANOMALOUS LOW-TEMPERATURE DOPANT DIFFUSION FROM IN-SITU DOPED POLYCRYSTALLINE AND EPITAXIAL SI LAYERS INTO THE MONOCRYSTALLINE SI SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 387-390
ION-BEAM MIXING AND OXIDATION OF A SI GE-MULTILAYER UNDER OXYGEN BOMBARDMENT/
Authors: DECOSTER W BRIJS B OSICEANU P ALAY J CAYMAX M VANDERVORST W
Citation: W. Decoster et al., ION-BEAM MIXING AND OXIDATION OF A SI GE-MULTILAYER UNDER OXYGEN BOMBARDMENT/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 911-915
LOW-TEMPERATURE SELECTIVE GROWTH OF EPITAXIAL SI AND SI1-XGEX LAYERS FROM SIH4 AND GEH4 IN AN ULTRAHIGH-VACUUM, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR - KINETICS AND POSSIBILITIES
Authors: CAYMAX M POORTMANS J VANAMMEL A LIBEZNY M NIJS J MERTENS R
Citation: M. Caymax et al., LOW-TEMPERATURE SELECTIVE GROWTH OF EPITAXIAL SI AND SI1-XGEX LAYERS FROM SIH4 AND GEH4 IN AN ULTRAHIGH-VACUUM, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR - KINETICS AND POSSIBILITIES, Thin solid films, 241(1-2), 1994, pp. 324-328
ON THE RELATION BETWEEN LOW-TEMPERATURE EPITAXIAL-GROWTH CONDITIONS AND THE SURFACE-MORPHOLOGY OF EPITAXIAL SI AND SI1-XGEX LAYERS, GROWN IN AN ULTRAHIGH-VACUUM, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR
Authors: CAYMAX M POORTMANS J VANAMMEL A VANHELLEMONT J LIBEZNY M NIJS J MERTENS R
Citation: M. Caymax et al., ON THE RELATION BETWEEN LOW-TEMPERATURE EPITAXIAL-GROWTH CONDITIONS AND THE SURFACE-MORPHOLOGY OF EPITAXIAL SI AND SI1-XGEX LAYERS, GROWN IN AN ULTRAHIGH-VACUUM, VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR, Thin solid films, 241(1-2), 1994, pp. 335-339
INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION
Authors: OHYAMA H VANHELLEMONT J SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., INFLUENCE OF GERMANIUM CONTENT ON THE DEGRADATION OF STRAINED SI1-XGEX EPITAXIAL DIODES BY ELECTRON-IRRADIATION, Physica status solidi. a, Applied research, 143(1), 1994, pp. 183-193
SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON
Authors: BENDER H VERHAVERBEKE S CAYMAX M VATEL O HEYNS MM
Citation: H. Bender et al., SURFACE RECONSTRUCTION OF HYDROGEN ANNEALED (100) SILICON, Journal of applied physics, 75(2), 1994, pp. 1207-1209
GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEXEPITAXIAL DEVICES
Authors: OHYAMA H VANHELLEMONT J TAKAMI Y HAYAMA K SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED SI1-XGEXEPITAXIAL DEVICES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2437-2442
ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES
Authors: OHYAMA H VANHELLEMONT J SUNAGA H POORTMANS J CAYMAX M CLAUWS P
Citation: H. Ohyama et al., ON THE DEGRADATION OF 1-MEV ELECTRON-IRRADIATED SIL-XGEX DIODES, IEEE transactions on nuclear science, 41(3), 1994, pp. 487-494
PHOTOLUMINESCENCE DETERMINATION OF THE FERMI ENERGY IN HEAVILY-DOPED STRAINED SI1-XGEX LAYERS
Authors: LIBEZNY M JAIN SC POORTMANS J CAYMAX M NIJS J MERTENS R WERNER K BALK P
Citation: M. Libezny et al., PHOTOLUMINESCENCE DETERMINATION OF THE FERMI ENERGY IN HEAVILY-DOPED STRAINED SI1-XGEX LAYERS, Applied physics letters, 64(15), 1994, pp. 1953-1955
Risultati: 1-25 | 26-29