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Results: 1-25 | 26-39
Results: 1-25/39
INITIAL-STAGE OF THE GROWTH OF FE ON SI(111)(1X1)-H
Authors: MARTIN MG AVILA J GRUYTERS M TEODORESCU C DUMAS P CHABAL YJ ASENSIO MC
Citation: Mg. Martin et al., INITIAL-STAGE OF THE GROWTH OF FE ON SI(111)(1X1)-H, Applied surface science, 123, 1998, pp. 156-160
SILICON EPOXIDE - UNEXPECTED INTERMEDIATE DURING SILICON-OXIDE FORMATION
Authors: STEFANOV BB GUREVICH AB WELDON MK RAGHAVACHARI K CHABAL YJ
Citation: Bb. Stefanov et al., SILICON EPOXIDE - UNEXPECTED INTERMEDIATE DURING SILICON-OXIDE FORMATION, Physical review letters, 81(18), 1998, pp. 3908-3911
AN INFRARED STUDY OF H8SI8O12 CLUSTER ADSORPTION ON SI(100) SURFACES
Authors: ENG J RAGHAVACHARI K STRUCK LM CHABAL YJ BENT BE BANASZAKHOLL MM MCFEELY FR MICHAELS AM FLYNN GW CHRISTMAN SB CHABAN EE WILLIAMS GP RADERMACHER K MANTL S
Citation: J. Eng et al., AN INFRARED STUDY OF H8SI8O12 CLUSTER ADSORPTION ON SI(100) SURFACES, The Journal of chemical physics, 108(20), 1998, pp. 8680-8688
APPLICATIONS OF INFRARED-ABSORPTION SPECTROSCOPY TO THE MICROELECTRONIC INDUSTRY
Authors: CHABAL YJ WELDON MK MARSICO VE
Citation: Yj. Chabal et al., APPLICATIONS OF INFRARED-ABSORPTION SPECTROSCOPY TO THE MICROELECTRONIC INDUSTRY, Journal de physique. IV, 7(C6), 1997, pp. 3-17
ON THE MECHANISM OF THE HYDROGEN-INDUCED EXFOLIATION OF SILICON
Authors: WELDON MK MARSICO VE CHABAL YJ AGARWAL A EAGLESHAM DJ SAPJETA J BROWN WL JACOBSON DC CAUDANO Y CHRISTMAN SB CHABAN EE
Citation: Mk. Weldon et al., ON THE MECHANISM OF THE HYDROGEN-INDUCED EXFOLIATION OF SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1065-1073
VIBRATIONAL STUDY OF SILICON OXIDATION - H2O ON SI(100)
Authors: STRUCK LM ENG J BENT BE FLYNN GW CHABAL YJ CHRISTMAN SB CHABAN EE RAGHAVACHARI K WILLIAMS GP RADERMACHER K MANTL S
Citation: Lm. Struck et al., VIBRATIONAL STUDY OF SILICON OXIDATION - H2O ON SI(100), Surface science, 380(2-3), 1997, pp. 444-454
ADSORPTION AND REACTIVITY OF NO ON CU(111) - A SYNCHROTRON INFRARED REFLECTION-ABSORPTION SPECTROSCOPIC STUDY
Authors: DUMAS P SUHREN M CHABAL YJ HIRSCHMUGL CJ WILLIAMS GP
Citation: P. Dumas et al., ADSORPTION AND REACTIVITY OF NO ON CU(111) - A SYNCHROTRON INFRARED REFLECTION-ABSORPTION SPECTROSCOPIC STUDY, Surface science, 371(2-3), 1997, pp. 200-212
INITIAL H2O-INDUCED OXIDATION OF SI(100)-(2X1)
Authors: WELDON MK STEFANOV BB RAGHAVACHARI K CHABAL YJ
Citation: Mk. Weldon et al., INITIAL H2O-INDUCED OXIDATION OF SI(100)-(2X1), Physical review letters, 79(15), 1997, pp. 2851-2854
A VIBRATIONAL STUDY OF ETHANOL ADSORPTION ON SI(100)
Authors: ENG J RAGHAVACHARI K STRUCK LM CHABAL YJ BENT BE FLYNN GW CHRISTMAN SB CHABAN EE WILLIAMS GP RADERMACHER K MANTI S
Citation: J. Eng et al., A VIBRATIONAL STUDY OF ETHANOL ADSORPTION ON SI(100), The Journal of chemical physics, 106(23), 1997, pp. 9889-9898
PHYSICS AND CHEMISTRY OF SILICON-WAFER BONDING INVESTIGATED BY INFRARED-ABSORPTION SPECTROSCOPY
Authors: WELDON MK CHABAL YJ HAMANN DR CHRISTMAN SB CHABAN EE FELDMAN LC
Citation: Mk. Weldon et al., PHYSICS AND CHEMISTRY OF SILICON-WAFER BONDING INVESTIGATED BY INFRARED-ABSORPTION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3095-3106
INFRARED-SPECTROSCOPY AS A PROBE OF FUNDAMENTAL PROCESSES IN MICROELECTRONICS - SILICON-WAFER CLEANING AND BONDING
Authors: WELDON MK MARSICO VE CHABAL YJ HAMANN DR CHRISTMAN SB CHABAN EE
Citation: Mk. Weldon et al., INFRARED-SPECTROSCOPY AS A PROBE OF FUNDAMENTAL PROCESSES IN MICROELECTRONICS - SILICON-WAFER CLEANING AND BONDING, Surface science, 368, 1996, pp. 163-178
VIBRATIONAL STUDY OF C-60 OVERLAYERS ON H SI(111)-(1X1)/
Authors: DUMAS P GRUYTERS M RUDOLF P HE LM YU LM GENSTERBLUM G CAUDANO R CHABAL YJ
Citation: P. Dumas et al., VIBRATIONAL STUDY OF C-60 OVERLAYERS ON H SI(111)-(1X1)/, Surface science, 368, 1996, pp. 330-336
VIBRATIONAL INTERACTIONS AT SURFACES - H2O ON SI(100)
Authors: RAGHAVACHARI K CHABAL YJ STRUCK LM
Citation: K. Raghavachari et al., VIBRATIONAL INTERACTIONS AT SURFACES - H2O ON SI(100), Chemical physics letters, 252(3-4), 1996, pp. 230-235
REAL-TIME IN-SITU MONITORING OF SURFACES DURING GLOW-DISCHARGE PROCESSING - NH3 AND H-2 PLASMA PASSIVATION OF GAAS
Authors: AYDIL ES ZHOU ZH GOTTSCHO RA CHABAL YJ
Citation: Es. Aydil et al., REAL-TIME IN-SITU MONITORING OF SURFACES DURING GLOW-DISCHARGE PROCESSING - NH3 AND H-2 PLASMA PASSIVATION OF GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 258-267
CHARACTERIZATION OF SILICON SURFACES AND INTERFACES BY OPTICAL VIBRATIONAL SPECTROSCOPY
Authors: CHABAL YJ HINES MA FEIJOO D
Citation: Yj. Chabal et al., CHARACTERIZATION OF SILICON SURFACES AND INTERFACES BY OPTICAL VIBRATIONAL SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1719-1727
SIZE, SHAPE, AND COMPOSITION OF LUMINESCENT SPECIES IN OXIDIZED SI NANOCRYSTALS AND H-PASSIVATED POROUS SI
Authors: SCHUPPLER S FRIEDMAN SL MARCUS MA ADLER DL XIE YH ROSS FM CHABAL YJ HARRIS TD BRUS LE BROWN WL CHABAN EE SZAJOWSKI PF CHRISTMAN SB CITRIN PH
Citation: S. Schuppler et al., SIZE, SHAPE, AND COMPOSITION OF LUMINESCENT SPECIES IN OXIDIZED SI NANOCRYSTALS AND H-PASSIVATED POROUS SI, Physical review. B, Condensed matter, 52(7), 1995, pp. 4910-4925
VIBRATIONAL CHARACTERIZATION AND ELECTRONIC-PROPERTIES OF LONG RANGE-ORDERED, IDEALLY HYDROGEN-TERMINATED SI(111)
Authors: DUMAS P CHABAL YJ GUNTHER R IBRAHIMI AT PETROFF Y
Citation: P. Dumas et al., VIBRATIONAL CHARACTERIZATION AND ELECTRONIC-PROPERTIES OF LONG RANGE-ORDERED, IDEALLY HYDROGEN-TERMINATED SI(111), Progress in Surface Science, 48(1-4), 1995, pp. 313-324
THE ATOMIC-SCALE REMOVAL MECHANISM DURING CHEMOMECHANICAL POLISHING OF SI(100) AND SI(111)
Authors: PIETSCH GJ CHABAL YJ HIGASHI GS
Citation: Gj. Pietsch et al., THE ATOMIC-SCALE REMOVAL MECHANISM DURING CHEMOMECHANICAL POLISHING OF SI(100) AND SI(111), Surface science, 333, 1995, pp. 395-401
INFRARED-ABSORPTION SPECTROSCOPY OF SI(100) AND SI(111) SURFACES AFTER CHEMOMECHANICAL POLISHING
Authors: PIETSCH GJ CHABAL YJ HIGASHI GS
Citation: Gj. Pietsch et al., INFRARED-ABSORPTION SPECTROSCOPY OF SI(100) AND SI(111) SURFACES AFTER CHEMOMECHANICAL POLISHING, Journal of applied physics, 78(3), 1995, pp. 1650-1658
HIGH-RESOLUTION PHOTOEMISSION SPECTROSCOPY OF FLAT AND STEPPED NON RECONSTRUCTED H SI(111) SURFACES/
Authors: TALEBIBRAHIMI A GUNTHER R DUMAS P INDLEKOFER G CHABAL YJ PETROFF Y
Citation: A. Talebibrahimi et al., HIGH-RESOLUTION PHOTOEMISSION SPECTROSCOPY OF FLAT AND STEPPED NON RECONSTRUCTED H SI(111) SURFACES/, Journal de physique. IV, 4(C9), 1994, pp. 89-95
LOW-FREQUENCY DYNAMICS OF CO CU BREAKDOWN OF BORN-OPPENHEIMER APPROXIMATION/
Authors: HIRSCHMUGL CJ CHABAL YJ HOFFMANN FM WILLIAMS GP
Citation: Cj. Hirschmugl et al., LOW-FREQUENCY DYNAMICS OF CO CU BREAKDOWN OF BORN-OPPENHEIMER APPROXIMATION/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2229-2234
MONOHYDRIDE STRUCTURES ON CHEMICALLY PREPARED SILICON SURFACES
Authors: JAKOB P CHABAL YJ KUHNKE K CHRISTMAN SB
Citation: P. Jakob et al., MONOHYDRIDE STRUCTURES ON CHEMICALLY PREPARED SILICON SURFACES, Surface science, 302(1-2), 1994, pp. 49-56
REAL-TIME MONITORING OF SURFACE-CHEMISTRY DURING PLASMA PROCESSING
Authors: AYDIL ES GOTTSCHO RA CHABAL YJ
Citation: Es. Aydil et al., REAL-TIME MONITORING OF SURFACE-CHEMISTRY DURING PLASMA PROCESSING, Pure and applied chemistry, 66(6), 1994, pp. 1381-1388
DIMENSIONS OF LUMINESCENT OXIDIZED AND POROUS SILICON STRUCTURES
Authors: SCHUPPLER S FRIEDMAN SL MARCUS MA ADLER DL XIE YH ROSS FM HARRIS TD BROWN WL CHABAL YJ BRUS LE CITRIN PH
Citation: S. Schuppler et al., DIMENSIONS OF LUMINESCENT OXIDIZED AND POROUS SILICON STRUCTURES, Physical review letters, 72(16), 1994, pp. 2648-2651
MEASURING THE STRUCTURE OF ETCHED SILICON SURFACES WITH RAMAN-SPECTROSCOPY
Authors: HINES MA CHABAL YJ HARRIS TD HARRIS AL
Citation: Ma. Hines et al., MEASURING THE STRUCTURE OF ETCHED SILICON SURFACES WITH RAMAN-SPECTROSCOPY, The Journal of chemical physics, 101(9), 1994, pp. 8055-8072
Risultati: 1-25 | 26-39