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Results: 1-10 |
Results: 10
MIRROR PASSIVATION OF INGAAS LASERS
Authors: DUTTA NK HOBSON WS ZYDZIK GJ DEJONG JF PARAYANTHAL P PASSLACK M CHAKRABARTI UK
Citation: Nk. Dutta et al., MIRROR PASSIVATION OF INGAAS LASERS, Electronics Letters, 33(3), 1997, pp. 213-214
ZNSE FOR MIRROR PASSIVATION OF HIGH-POWER GAAS BASED LASERS
Authors: CHAND N HOBSON WS DEJONG JF PARAYANTHAL P CHAKRABARTI UK
Citation: N. Chand et al., ZNSE FOR MIRROR PASSIVATION OF HIGH-POWER GAAS BASED LASERS, Electronics Letters, 32(17), 1996, pp. 1595-1596
INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS
Authors: PASSLACK M BETHEA CG HOBSON WS LOPATA J SCHUBERT EF ZYDZIK GJ NICHOLS DT DEJONG JF CHAKRABARTI UK DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
COMPARISON OF SURFACE RECOMBINATION VELOCITIES IN INGAP AND ALGAAS MESA DIODES
Authors: PEARTON SJ REN F HOBSON WS ABERNATHY CR CHAKRABARTI UK
Citation: Sj. Pearton et al., COMPARISON OF SURFACE RECOMBINATION VELOCITIES IN INGAP AND ALGAAS MESA DIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 142-146
NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS
Authors: PEARTON SJ CHAKRABARTI UK REN F ABERNATHY CR KATZ A HOBSON WS CONSTANTINE C
Citation: Sj. Pearton et al., NEW DRY-ETCH CHEMISTRIES FOR III-V SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 25(2-3), 1994, pp. 179-185
EFFECT OF SUBSTRATE-TEMPERATURE ON DRY-ETCHING OF INP, GAAS, AND ALGAAS IN IODINE-BASED AND BROMINE-BASED PLASMAS
Authors: CHAKRABARTI UK REN F PEARTON SJ ABERNATHY CR
Citation: Uk. Chakrabarti et al., EFFECT OF SUBSTRATE-TEMPERATURE ON DRY-ETCHING OF INP, GAAS, AND ALGAAS IN IODINE-BASED AND BROMINE-BASED PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1129-1133
CHARACTERISTICS OF VINYL IODIDE MICROWAVE PLASMA-ETCHING OF GAAS ALGAAS AND INP/INGAAS HETEROSTRUCTURES/
Authors: CHAKRABARTI UK PEARTON SJ HOBSON WS ABERNATHY CR
Citation: Uk. Chakrabarti et al., CHARACTERISTICS OF VINYL IODIDE MICROWAVE PLASMA-ETCHING OF GAAS ALGAAS AND INP/INGAAS HETEROSTRUCTURES/, Plasma chemistry and plasma processing, 13(2), 1993, pp. 333-350
SURFACE RECOMBINATION VELOCITIES ON PROCESSED INGAP P-N-JUNCTIONS
Authors: PEARTON SJ REN F HOBSON WS ABERNATHY CR MASAITIS RL CHAKRABARTI UK
Citation: Sj. Pearton et al., SURFACE RECOMBINATION VELOCITIES ON PROCESSED INGAP P-N-JUNCTIONS, Applied physics letters, 63(26), 1993, pp. 3610-3612
DEGRADATION-FREE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF INP
Authors: PEARTON SJ CHAKRABARTI UK PERLEY AP CONSTANTINE C JOHNSON D
Citation: Sj. Pearton et al., DEGRADATION-FREE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF INP, Semiconductor science and technology, 6(9), 1991, pp. 929-933
SIDEWALL ROUGHNESS DURING DRY ETCHING OF INP
Authors: CHAKRABARTI UK PEARTON SJ REN F
Citation: Uk. Chakrabarti et al., SIDEWALL ROUGHNESS DURING DRY ETCHING OF INP, Semiconductor science and technology, 6(5), 1991, pp. 408-410
Risultati: 1-10 |