Authors:
CHERNS D
YOUNG WT
SAUNDERS M
STEEDS JW
PONCE FA
NAKAMURA S
Citation: D. Cherns et al., DETERMINATION OF THE ATOMIC-STRUCTURE OF INVERSION DOMAIN BOUNDARIES IN ALPHA-GAN BY TRANSMISSION ELECTRON-MICROSCOPY, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(1), 1998, pp. 273-286
Citation: D. Cherns et al., PROFILING GE ISLANDS IN SI BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION, Journal of Electron Microscopy, 47(3), 1998, pp. 211-215
Citation: D. Cherns et al., MEASUREMENT OF THE LATTICE DISPLACEMENT ACROSS (100)PLATELETS IN DIAMOND BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(6), 1997, pp. 1553-1566
Citation: D. Cherns et al., CHARACTERIZATION OF DISLOCATIONS, NANOPIPES AND INVERSION DOMAINS IN GAN BY TRANSMISSION ELECTRON-MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 76-81
Authors:
JAGER W
MEERTENS D
HOVSEPIAN A
CHERNS D
BARNARD J
Citation: W. Jager et al., CHARACTERIZATION OF EPITAXIAL SIGE NANOST RUCTURES BY HIGH-RESOLUTIONTRANSMISSION ELECTRON-MICROSCOPY, LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION AND ENERGY-FILTERED TRANSMISSION ELECTRON-MICROSCOPY, European journal of cell biology, 74, 1997, pp. 116-116
Citation: D. Cherns et al., A NEW SOURCE OF MISFIT DISLOCATIONS IN ZNTE GASB(001)/, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(2), 1996, pp. 553-568
Authors:
MAY PW
BURRIDGE PR
REGO CA
TSANG RS
ASHFOLD MNR
ROSSER KN
TANNER RE
CHERNS D
VINCENT R
Citation: Pw. May et al., INVESTIGATION OF THE ADDITION OF NITROGEN-CONTAINING GASES TO A HOT-FILAMENT DIAMOND CHEMICAL-VAPOR-DEPOSITION REACTOR, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 354-358
Citation: Jp. Morniroli et D. Cherns, ANALYSIS OF GRAIN-BOUNDARY DISLOCATIONS BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION, Ultramicroscopy, 62(1-2), 1996, pp. 53-63
Citation: Fa. Ponce et al., CHARACTERIZATION OF DISLOCATIONS IN GAN BY TRANSMISSION ELECTRON-DIFFRACTION AND MICROSCOPY TECHNIQUES, Applied physics letters, 69(6), 1996, pp. 770-772
Citation: Y. Atici et D. Cherns, OBSERVATION OF CRYSTAL DISTORTIONS IN SIGE SI SUPERLATTICE USING A NEW APPLICATION OF LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION/, Ultramicroscopy, 58(3-4), 1995, pp. 435-440
Citation: P. Cordier et al., CHARACTERIZATION OF CRYSTAL DEFECTS IN QUARTZ BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 72(5), 1995, pp. 1421-1430
Authors:
GRIGORIEFF N
CHERNS D
PRESTON AR
YATES MJ
Citation: N. Grigorieff et al., MODELS FOR TERMINATION OF CRYSTAL BOUNDARIES IN THE THEORY OF TRANSMISSION ELECTRON-DIFFRACTION AND COMPARISON WITH EXPERIMENTAL-DATA, Acta crystallographica. Section A, Foundations of crystallography, 51, 1995, pp. 343-350
Citation: Y. Atici et D. Cherns, TRANSMISSION ELECTRON-MICROSCOPE STUDY OF SURFACE STEPS ON SIGE SI(001) SUPERLATTICES PRODUCED BY DIFFERENTIAL ETCHING/, Journal of crystal growth, 154(3-4), 1995, pp. 262-268
Citation: D. Cherns et Jp. Morniroli, ANALYSIS OF PARTIAL AND STAIR-ROD DISLOCATIONS BY LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION, Ultramicroscopy, 53(2), 1994, pp. 167-180
Authors:
HUTCHISON JL
CHOU CT
CASANOVE MJ
CHERNS D
STEEDS JW
ASHENFORD DA
LUNN B
Citation: Jl. Hutchison et al., HREM OF GA2TE3 - IMAGING OF AN ORDERED VACANCY SUPERLATTICE WITH ENHANCED CONTRAST, Ultramicroscopy, 53(1), 1994, pp. 91-96
Citation: Xf. Duan et al., EFFECTS OF ELASTIC RELAXATION ON LARGE-ANGLE CONVERGENT-BEAM ELECTRON-DIFFRACTION FROM CROSS-SECTIONAL SPECIMENS OF GEXSI1-X SI STRAINED-LAYER SUPERLATTICES/, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 70(6), 1994, pp. 1091-1105
Authors:
ROSSOUW CJ
SPELLWARD P
PEROVIC DD
CHERNS D
Citation: Cj. Rossouw et al., DYNAMICAL ZONE-AXIS ELECTRON-DIFFRACTION CONTRAST OF BORON-DOPED SI MULTILAYERS, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 69(2), 1994, pp. 255-265
Citation: Jw. Steeds et D. Cherns, PROBING SEMICONDUCTOR INTERFACES BY TRANSMISSION ELECTRON-MICROSCOPY, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 344(1673), 1993, pp. 545-556
Authors:
CHERNS D
CHOU CT
STEEDS JW
ASHENFORD DA
LUNN B
Citation: D. Cherns et al., A MULTIPLE CROSS-SLIP MECHANISM FOR THE GENERATION OF MISFIT DISLOCATIONS IN (001) SEMICONDUCTOR HETEROSTRUCTURES, Philosophical magazine letters, 67(5), 1993, pp. 323-330