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Results:
1-24
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Results: 24
Authors:
OSOTCHAN T
CHIN VWL
TANSLEY TL
Citation: T. Osotchan et al., TRANSPORT MECHANISM OF GAMMA-BAND AND X-BAND ELECTRONS IN ALXGA1-XAS ALAS/GAAS DOUBLE-BARRIER QUANTUM-WELL INFRARED PHOTODETECTORS/, Physical review. B, Condensed matter, 54(3), 1996, pp. 2059-2066
Authors:
SUBEKTI A
CHIN VWL
TANSLEY TL
Citation: A. Subekti et al., OHMIC CONTACTS TO N-TYPE AND P-TYPE GASB, Solid-state electronics, 39(3), 1996, pp. 329-332
Authors:
CHIN VWL
STOREY JWV
GREEN MA
Citation: Vwl. Chin et al., BIAS AND THICKNESS DEPENDENCE OF THE INFRARED PTSI P-SI SCHOTTKY DIODE STUDIED BY INTERNAL PHOTOEMISSION/, Solid-state electronics, 39(2), 1996, pp. 277-280
Authors:
EGAN RJ
CHIN VWL
BUTCHER KSA
TANSLEY TL
Citation: Rj. Egan et al., HYDROGENATION PASSIVATION OF ACCEPTORS IN MOCVD GROWN P-INSB, Solid state communications, 98(8), 1996, pp. 751-754
Authors:
OSOTCHAN T
CHIN VWL
TANSLEY TL
Citation: T. Osotchan et al., TRANSITION IN (001)ALGAAS ALAS/GAAS DOUBLE-BARRIER QUANTUM STRUCTURE FOR INFRARED PHOTODETECTION/, Journal of applied physics, 80(9), 1996, pp. 5342-5347
Authors:
CHIN VWL
EGAN RJ
OSOTCHAN T
VAUGHAN MR
ANDERSON SC
Citation: Vwl. Chin et al., NONCONTACT THICKNESS AND COMPOSITION ASSESSMENT OF A STRAINED ALGAAS ALAS/INGAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL STRUCTURE/, Journal of applied physics, 80(4), 1996, pp. 2521-2523
Authors:
OSOTCHAN T
CHIN VWL
TANSLEY TL
USHER BF
CLARK A
Citation: T. Osotchan et al., MBE AND MOCVD GROWTH OF ALGAAS-ALAS-GAAS DOUBLE-BARRIER MULTIPLE-QUANTUM-WELL INFRARED DETECTOR, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 176-179
Authors:
OSOTCHAN T
CHIN VWL
TANSLEY TL
Citation: T. Osotchan et al., CURRENT CHARACTERISTICS OF THE DOUBLE-BARRIER AL0.25GA0.75AS AL0.45GA0.55AS/GAAS SINGLE-QUANTUM-WELL STRUCTURES/, Physical review. B, Condensed matter, 52(7), 1995, pp. 5202-5209
Authors:
CHIN VWL
Citation: Vwl. Chin, ELECTRON-MOBILITY IN GASB, Solid-state electronics, 38(1), 1995, pp. 59-67
Authors:
EGAN RJ
CHIN VWL
TANSLEY TL
Citation: Rj. Egan et al., HOLE TRANSPORT IN THE INSB-INAS MATERIAL SYSTEM, Solid state communications, 93(7), 1995, pp. 553-556
Authors:
CHIN VWL
OSOTCHAN T
TANSLEY TL
Citation: Vwl. Chin et al., ELECTRON-MOBILITY IN IN0.53GA0.47AS AS A FUNCTION OF CONCENTRATION AND TEMPERATURE, Microelectronics, 26(7), 1995, pp. 653-657
Authors:
EGAN RJ
TANSLEY TL
CHIN VWL
Citation: Rj. Egan et al., GROWTH OF INAS FROM MONOETHYL ARSINE, Journal of crystal growth, 147(1-2), 1995, pp. 19-26
Authors:
CHIN VWL
ZHOU B
TANSLEY TL
LI X
Citation: Vwl. Chin et al., ALLOY-SCATTERING DEPENDENCE OF ELECTRON-MOBILITY IN THE TERNARY GALLIUM, INDIUM, AND ALUMINUM NITRIDES, Journal of applied physics, 77(11), 1995, pp. 6064-6066
Authors:
EGAN RJ
CHIN VWL
TANSLEY TL
Citation: Rj. Egan et al., GROWTH, MORPHOLOGY AND ELECTRICAL-TRANSPORT PROPERTIES OF MOCVD-GROWNP-INSB, Semiconductor science and technology, 9(9), 1994, pp. 1591-1597
Authors:
OSOTCHAN T
CHIN VWL
VAUGHAN MR
TANSLEY TL
GOLDYS EM
Citation: T. Osotchan et al., ELECTRONIC BAND-STRUCTURE OF ALXGA1-XAS ALYGA1-YAS/GAAS DOUBLE-BARRIER SUPERLATTICES/, Physical review. B, Condensed matter, 50(4), 1994, pp. 2409-2419
Authors:
LI X
TANSLEY TL
CHIN VWL
Citation: X. Li et al., DIELECTRIC-PROPERTIES OF ALN FILMS PREPARED BY LASER-INDUCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 250(1-2), 1994, pp. 263-267
Authors:
CHIN VWL
Citation: Vwl. Chin, REASSESSMENT OF THE PIEZOELECTRIC CONSTANT IN GAAS BY STUDYING THE ELECTRON-TRANSPORT OF HIGH-PURITY MBE-GROWN GAAS, Solid-state electronics, 37(7), 1994, pp. 1345-1347
Authors:
GOLDYS EM
CHIN VWL
TANSLEY TL
VAUGHAN MR
Citation: Em. Goldys et al., PHOTOLUMINESCENCE EXCITATION INTERPRETED BY PHOTON RECYCLING IN GAAS GAALAS MULTIPLE-QUANTUM-WELL STRUCTURE/, Journal of applied physics, 75(8), 1994, pp. 4194-4200
Authors:
EGAN RJ
CHIN VWL
TANSLEY TL
Citation: Rj. Egan et al., DISLOCATION SCATTERING EFFECTS ON ELECTRON-MOBILITY IN INASSB, Journal of applied physics, 75(5), 1994, pp. 2473-2476
Authors:
CHIN VWL
TANSLEY TL
OSTOCHAN T
Citation: Vwl. Chin et al., ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES, Journal of applied physics, 75(11), 1994, pp. 7365-7372
Authors:
CHIN VWL
TANSLEY TL
ZHANG DH
RADHAKRISHNAN K
YOON SF
CLARK A
Citation: Vwl. Chin et al., PHOTOLUMINESCENCE, INTERSUBBAND ABSORPTION, AND DOUBLE-CRYSTAL X-RAY-DIFFRACTION IN P-DOPED INGAAS ALGAAS STRAINED MULTIPLE-QUANTUM WELLS/, Applied physics letters, 65(11), 1994, pp. 1430-1432
Authors:
CHIN VWL
OSOTCHAN T
VAUGHAN MR
TANSLEY TL
GRIFFITHS GJ
KACHWALLA Z
Citation: Vwl. Chin et al., HALL AND DRIFT MOBILITIES IN MOLECULAR-BEAM EPITAXIAL GROWN GAAS, Journal of electronic materials, 22(11), 1993, pp. 1317-1321
Authors:
BUTCHER KSA
ALEXIEV D
CHIN VWL
TANSLEY TL
EGAN RJ
KEANE M
Citation: Ksa. Butcher et al., SCHOTTKY-BARRIER HEIGHT MODIFICATION ON HIGH-PURITY LPE GAAS FOLLOWING A SULFUR-BASED ETCH, Semiconductor science and technology, 8(7), 1993, pp. 1451-1458
Authors:
CHIN VWL
NEWBURY SM
Citation: Vwl. Chin et Sm. Newbury, DETERMINATION OF BARRIER HEIGHT AND DOPING DENSITY OF A SCHOTTKY DIODE FROM INFRARED PHOTORESPONSE MEASUREMENTS, Australian journal of physics, 45(6), 1992, pp. 781-787
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