Citation: Wx. Hou et al., THEORETICAL-ANALYSIS OF EFFECT OF DOMAIN INVERSION SHAPE ON 2ND-HARMONIC GENERATION CONVERSION EFFICIENCIES OF QUASI-PHASE-MATCHED NONLINEAR-OPTICAL WAVE-GUIDE DEVICES, JPN J A P 1, 35(11), 1996, pp. 5705-5710
Citation: Wj. Fan et al., ELECTRONIC-STRUCTURES OF THE ZINCBLENDE GAN GA1-XALXN COMPRESSIVELY STRAINED SUPERLATTICES AND QUANTUM WELLS/, Superlattices and microstructures, 19(4), 1996, pp. 251-261
Citation: Z. Zhuo et al., FORMATION AND ANISOTROPIC PROPERTIES OF ION-EXCHANGED KTIOPO4 CRYSTALWAVE-GUIDES, Ferroelectrics. Letters section, 22(1-2), 1996, pp. 35-39
Citation: Wj. Fan et al., BAND-STRUCTURE PARAMETERS OF ZINCBLENDE GAN, ALN AND THEIR ALLOYS GA1-XALXN, Solid state communications, 97(5), 1996, pp. 381-384
Authors:
ZENG HC
CHONG TC
LIM LC
KUMAGAI H
HIRANO M
Citation: Hc. Zeng et al., EFFECTS OF MENISCUS ON THE DIRECTIONAL GROWTH OF POTASSIUM NIOBATE SINGLE-CRYSTALS, Journal of crystal growth, 160(3-4), 1996, pp. 289-295
Authors:
ZENG HC
CHONG TC
LIM LC
KUMAGAI H
HIRANO M
Citation: Hc. Zeng et al., 2-LEVEL GROWTH OF POTASSIUM NIOBATE KNBO3 SINGLE-CRYSTALS - A NEW GROWTH METHOD FOR ABO(3)-TYPE MATERIALS, Journal of crystal growth, 160(3-4), 1996, pp. 296-304
Citation: Wj. Fan et al., VALENCE HOLE SUBBANDS AND OPTICAL GAIN SPECTRA OF GAN GA1-XALXN STRAINED QUANTUM-WELLS/, Journal of applied physics, 80(6), 1996, pp. 3471-3478
Citation: Wj. Fan et al., ELECTRONIC-PROPERTIES OF ZINCBLENDE GAN, ALN, AND THEIR ALLOYS GA1-XALXN, Journal of applied physics, 79(1), 1996, pp. 188-194
Authors:
DU AY
LI MF
CHONG TC
TEO KL
LAU WS
ZHANG Z
Citation: Ay. Du et al., DISLOCATIONS AND RELATED TRAPS IN P-INGAAS GAAS LATTICE-MISMATCHED HETEROSTRUCTURES/, Applied physics letters, 69(19), 1996, pp. 2849-2851
Citation: Ch. Goo et al., TRAP SIGNATURES OF AS PRECIPITATES AND AS-ANTISITE-RELATED DEFECTS INGAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Applied physics letters, 69(17), 1996, pp. 2543-2545
Citation: Ch. Goo et al., HIGH OXYGEN AND CARBON CONTENTS IN GAAS EPILAYERS GROWN BELOW A CRITICAL SUBSTRATE-TEMPERATURE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 68(6), 1996, pp. 841-843
Authors:
SHI S
JI W
XIE W
CHONG TC
ZENG HC
LANG JP
XIN XQ
Citation: S. Shi et al., THE MIXED-METAL CLUSTER (N-BU(4)N)(2)[MOCU3OS3(NCS)(3)] - THE FIRST EXAMPLE OF A NEST-SHAPED COMPOUND WITH LARGE 3RD-ORDER POLARIZABILITY AND OPTICAL LIMITING EFFECT, Materials chemistry and physics, 39(4), 1995, pp. 298-303
Citation: Ay. Du et al., OBSERVATION OF CARRIER CONCENTRATION SATURATION EFFECT IN N-TYPE ALXGA1-XAS, Applied physics letters, 66(11), 1995, pp. 1391-1393
Citation: Cc. Phua et al., IMPROVED CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXY-GROWN GAAS-ON-SI EPILAYER THROUGH THE USE OF LOW-TEMPERATURE GAAS INTERMEDIATE LAYER, JPN J A P 2, 33(3B), 1994, pp. 120000405-120000408
Authors:
ZENG HC
CHONG TC
LIM LC
KUMAGAI H
HIRANO M
Citation: Hc. Zeng et al., PSEUDO-DENDRITIC GROWTH IN LEAD MOLYBDATE SINGLE-CRYSTAL BY CZOCHRALSKI TECHNIQUE, Journal of crystal growth, 140(1-2), 1994, pp. 148-156
Citation: Tc. Rusli,"chong et Sj. Chua, THEORETICAL-ANALYSIS OF BOUND-TO-CONTINUUM STATE INFRARED-ABSORPTION IN GAAS-ALXGA1-XAS QUANTUM-WELL STRUCTURES, JPN J A P 1, 32(5A), 1993, pp. 1998-2004
Citation: Ws. Lau et al., QUANTITATIVE DETECTION OF OXYGEN CONTAMINATION RELATED TRAPS IN GALLIUM-ARSENIDE EPITAXIAL LAYER GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURE, JPN J A P 2, 32(9A), 1993, pp. 120001192-120001195
Citation: M. Kuramoto et al., ANALYSIS OF THRESHOLD CURRENT-DENSITY OF CDZNSE ZNSSE STRAINED WELL LASERS/, Electronics Letters, 29(14), 1993, pp. 1260-1262