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Results: 1-25/40
Authors:
PAN JW
CHEN MH
CHYI JI
SHIH TT
Citation: Jw. Pan et al., TEMPERATURE-DEPENDENT CHARACTERISTICS OF 1.3-MU-M ALGAINAS-INP LASERSWITH MULTIQUANTUM BARRIERS AT THE GUIDING LAYERS, IEEE photonics technology letters, 10(12), 1998, pp. 1700-1702
Authors:
NEE TE
YEH NT
CHYI JI
LEE CT
Citation: Te. Nee et al., MATRIX-DEPENDENT STRUCTURAL AND PHOTOLUMINESCENCE PROPERTIES OF IN0.5GA0.5AS QUANTUM DOTS CROWN BY MOLECULAR-BEAM EPITAXY, Solid-state electronics, 42(7-8), 1998, pp. 1331-1334
Authors:
LEE WC
HSU TM
WANG SC
CHANG MN
CHYI JI
Citation: Wc. Lee et al., THE FERMI-LEVEL OF ANNEALED LOW-TEMPERATURE GAAS ON SI-DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(1), 1998, pp. 486-490
Authors:
YUANG RH
CHYI JI
Citation: Rh. Yuang et Ji. Chyi, GAAS MSM PHOTODETECTORS WITH RECESSED ANODE AND OR CATHODE/, IEEE journal of quantum electronics, 34(5), 1998, pp. 811-816
Authors:
LAI LS
CHAN YJ
PAN JW
CHYI JI
Citation: Ls. Lai et al., CHARACTERISTICS OF FULLY QUATERNARY IN-0.52(AL0.8GA0.2)(0.48)AS IN-0.53(AL0.2GA0.8)(0.47)AS HETEROSTRUCTURES IN DOPED-CHANNEL FETS/, Electronics Letters, 34(3), 1998, pp. 308-309
Authors:
CHANG MN
PAN JW
CHYI JI
HSIEH KC
NEE TE
Citation: Mn. Chang et al., EFFECT OF COLUMN III VACANCY ON ARSENIC PRECIPITATION IN LOW-TEMPERATURE-GROWN III-V ARSENIDES, Applied physics letters, 72(5), 1998, pp. 587-589
Authors:
PAN JW
CHAU KG
CHYI JI
TU YK
LIAW JW
Citation: Jw. Pan et al., SUPPRESSION OF ELECTRON AND HOLE LEAKAGE IN 1.3-MU-M ALGAINAS INP QUANTUM-WELL LASERS USING MULTIQUANTUM BARRIER/, Applied physics letters, 72(17), 1998, pp. 2090-2092
Authors:
YUANG RH
SHIEH JL
CHYI JI
CHEN JS
Citation: Rh. Yuang et al., OVERALL PERFORMANCE IMPROVEMENT IN GAAS MSM PHOTODETECTORS BY USING RECESSED-CATHODE STRUCTURE, IEEE photonics technology letters, 9(2), 1997, pp. 226-228
Authors:
LEE WC
HSU TM
CHYI JI
Citation: Wc. Lee et al., PHOTOREFLECTANCE OF LOW-TEMPERATURE-GROWN GAAS ON SI-DELTA-DOPED GAAS, Applied surface science, 114, 1997, pp. 515-518
Authors:
CHEN YA
CHEN BF
TSAY WC
LAIH LH
CHANG MN
CHYI JI
HONG JW
CHANG CY
Citation: Ya. Chen et al., POROUS SILICON LIGHT-EMITTING DIODE WITH TUNABLE COLOR, Solid-state electronics, 41(5), 1997, pp. 757-759
Authors:
CHYI JI
NEE TE
LEE CT
SHIEH JL
PAN JW
Citation: Ji. Chyi et al., FORMATION OF SELF-ORGANIZED IN0.5GA0.5AS QUANTUM DOTS ON GAAS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 777-781
Authors:
SHIEH JL
CHANG MN
CHENG YS
CHYI JI
Citation: Jl. Shieh et al., DEFECTS IN METAMORPHIC INXAL1-XAS (X-LESS-THAN-0.4) EPILAYERS GROWN ON GAAS SUBSTRATES, Journal of applied physics, 82(1), 1997, pp. 210-213
Authors:
CHAN YJ
WU CS
CHEN CH
SHIEH JL
CHYI JI
Citation: Yj. Chan et al., CHARACTERISTICS OF A IN-0.52(ALXGA1-X)(0.48)AS 0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) HETEROJUNCTION AND ITS APPLICATION ON HEMTS/, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 708-714
Authors:
CHYI JI
CHIEN YJ
YUANG RH
SHIEH JL
PAN JW
CHEN JS
Citation: Ji. Chyi et al., REDUCTION OF HOLE TRANSIT-TIME IN GAAS MSM PHOTODETECTORS BY P-TYPE DELTA-DOPING, IEEE photonics technology letters, 8(11), 1996, pp. 1525-1527
Authors:
CHAN YJ
WU CS
CHYI JI
SHIEH JL
Citation: Yj. Chan et al., GAAS-BASED IN0.29AL0.71AS IN0.3GA0.7 AS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Microwave and optical technology letters, 11(3), 1996, pp. 148-150
Authors:
YANG MT
CHAN YJ
SHIEH JL
CHYI JI
Citation: Mt. Yang et al., ENHANCED DEVICE PERFORMANCE BY UNSTRAINED IN0.3GA0.7AS IN0.29AL0.71ASDOPED-CHANNEL FET ON GAAS SUBSTRATES/, IEEE electron device letters, 17(8), 1996, pp. 410-412
Authors:
YUANG RH
CHYI JI
LIN W
TU YK
Citation: Rh. Yuang et al., HIGH-SPEED INGAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH IMPROVED RESPONSIVITY AND PROCESS YIELD, Optical and quantum electronics, 28(10), 1996, pp. 1327-1334
Authors:
LEE WC
HSU TM
CHYI JI
LEE GS
LI WH
LEE KC
Citation: Wc. Lee et al., CHARACTERIZATION OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Applied surface science, 92, 1996, pp. 66-69
Authors:
CHYI JI
SHIEH JL
PAN JW
LIN RM
Citation: Ji. Chyi et al., MATERIAL PROPERTIES OF COMPOSITIONAL GRADED INXGA1-XAS AND INXAL1-XASEPILAYERS GROWN ON GAAS SUBSTRATES, Journal of applied physics, 79(11), 1996, pp. 8367-8370
Authors:
CHYI JI
WANG SK
GAU JH
SHIEH JL
PAN JW
Citation: Ji. Chyi et al., CHARACTERISTICS OF MULTISTACK MULTIQUANTUM BARRIER AND ITS APPLICATION TO GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE LASERS, IEEE journal of quantum electronics, 32(3), 1996, pp. 442-447
Authors:
PAN JW
CHYI JI
Citation: Jw. Pan et Ji. Chyi, THEORETICAL-STUDY OF THE TEMPERATURE-DEPENDENCE OF 1.3-MU-M ALGAINAS-INP MULTIPLE-QUANTUM-WELL LASERS, IEEE journal of quantum electronics, 32(12), 1996, pp. 2133-2138
Authors:
YUANG RH
CHYI JI
Citation: Rh. Yuang et Ji. Chyi, EFFECTS OF FINGER WIDTH ON LARGE-AREA INGAAS MSM PHOTODETECTORS, Electronics Letters, 32(2), 1996, pp. 131-132
Authors:
YUANG RH
CHIEN YJ
SHIEH JL
CHYI JI
Citation: Rh. Yuang et al., HIGH-SPEED GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH RECESSED METAL-ELECTRODES, Applied physics letters, 69(2), 1996, pp. 245-247
Authors:
YUANG RH
SHIEH HC
CHIEN YJ
CHAN YJ
CHYI JI
LIN W
TU YK
Citation: Rh. Yuang et al., HIGH-PERFORMANCE LARGE-AREA INGAAS MSM PHOTODETECTORS WITH A PSEUDOMORPHIC INGAP CAP LAYER, IEEE photonics technology letters, 7(8), 1995, pp. 914-916
Authors:
YUANG RH
CHYI JI
CHAN YJ
LIN W
TU YK
Citation: Rh. Yuang et al., HIGH-RESPONSIVITY INGAAS MSM PHOTODETECTORS WITH SEMITRANSPARENT SCHOTTKY CONTACTS, IEEE photonics technology letters, 7(11), 1995, pp. 1333-1335