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Results: 1-11 |
Results: 11
CHEMICAL ORDERING IN WURTZITE INXGA1-XN LAYERS GROWN ON (0001)-SAPPHIRE BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: RUTERANA P NOUET G VANDERSTRICHT W MOERMAN I CONSIDINE L
Citation: P. Ruterana et al., CHEMICAL ORDERING IN WURTZITE INXGA1-XN LAYERS GROWN ON (0001)-SAPPHIRE BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 72(14), 1998, pp. 1742-1744
PHOTOLUMINESCENCE INVESTIGATION OF THE CARRIER CONFINING PROPERTIES OF MULTIQUANTUM BARRIERS
Authors: MORRISON AP CONSIDINE L WALSH S CORDERO N LAMBKIN JD OCONNOR GM DALY EM GLYNN TJ VANDERPOEL CJ
Citation: Ap. Morrison et al., PHOTOLUMINESCENCE INVESTIGATION OF THE CARRIER CONFINING PROPERTIES OF MULTIQUANTUM BARRIERS, IEEE journal of quantum electronics, 33(8), 1997, pp. 1338-1344
LOW-THRESHOLD LASING IN NOVEL MICRODISK GEOMETRIES
Authors: CORBETT B JUSTICE J CONSIDINE L WALSH S KELLY WM
Citation: B. Corbett et al., LOW-THRESHOLD LASING IN NOVEL MICRODISK GEOMETRIES, IEEE photonics technology letters, 8(7), 1996, pp. 855-857
BEHAVIOR OF IN0.48GA0.52P (AL0.2GA0.8)(0.52)IN0.48P QUANTUM-WELL LUMINESCENCE AS A FUNCTION OF TEMPERATURE/
Authors: DALY EM GLYNN TJ LAMBKIN JD CONSIDINE L WALSH S
Citation: Em. Daly et al., BEHAVIOR OF IN0.48GA0.52P (AL0.2GA0.8)(0.52)IN0.48P QUANTUM-WELL LUMINESCENCE AS A FUNCTION OF TEMPERATURE/, Physical review. B, Condensed matter, 52(7), 1995, pp. 4696-4699
DARK CURRENTS IN PIN PHOTODETECTORS FABRICATED BY PREPROCESSING AND POSTPROCESSING TECHNIQUES OF EPITAXIAL LIFTOFF
Authors: JUSTICE J CORBETT B WALSH S CONSIDINE L KELLY WM
Citation: J. Justice et al., DARK CURRENTS IN PIN PHOTODETECTORS FABRICATED BY PREPROCESSING AND POSTPROCESSING TECHNIQUES OF EPITAXIAL LIFTOFF, Electronics Letters, 31(16), 1995, pp. 1382-1383
RELAXATION OF STRAINED INGAAS GAAS LAYERS UNDER THERMAL-PROCESSING/
Authors: LOURENCO MA HOMEWOOD KP CONSIDINE L
Citation: Ma. Lourenco et al., RELAXATION OF STRAINED INGAAS GAAS LAYERS UNDER THERMAL-PROCESSING/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 507-509
IMAGING SEMICONDUCTOR WAFERS USING PHOTOLUMINESCENCE
Authors: WHITE SF HENRY MO MCGLYNN E LAMBKIN JD CONSIDINE L
Citation: Sf. White et al., IMAGING SEMICONDUCTOR WAFERS USING PHOTOLUMINESCENCE, Optical engineering, 33(12), 1994, pp. 3974-3977
TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE INTENSITY OF ORDERED AND DISORDERED IN0.48GA0.52P
Authors: LAMBKIN JD CONSIDINE L WALSH S OCONNOR GM MCDONAGH CJ GLYNN TJ
Citation: Jd. Lambkin et al., TEMPERATURE-DEPENDENCE OF THE PHOTOLUMINESCENCE INTENSITY OF ORDERED AND DISORDERED IN0.48GA0.52P, Applied physics letters, 65(1), 1994, pp. 73-75
RESONANT-CAVITY LIGHT-EMITTING DIODE AND DETECTOR USING EPITAXIAL LIFTOFF
Authors: CORBETT B CONSIDINE L WALSH S KELLY WM
Citation: B. Corbett et al., RESONANT-CAVITY LIGHT-EMITTING DIODE AND DETECTOR USING EPITAXIAL LIFTOFF, IEEE photonics technology letters, 5(9), 1993, pp. 1041-1043
LONG-WAVELENGTH QUANTUM-WELL LASERS WITH INGAAS INP SUPERLATTICE OPTICAL CONFINEMENT AND BARRIER LAYERS/
Authors: GINTY A LAMBKIN JD CONSIDINE L KELLY WM
Citation: A. Ginty et al., LONG-WAVELENGTH QUANTUM-WELL LASERS WITH INGAAS INP SUPERLATTICE OPTICAL CONFINEMENT AND BARRIER LAYERS/, Electronics Letters, 29(8), 1993, pp. 684-685
NARROW BANDWIDTH LONG-WAVELENGTH RESONANT-CAVITY PHOTODIODES
Authors: CORBETT B CONSIDINE L WALSH S KELLY WM
Citation: B. Corbett et al., NARROW BANDWIDTH LONG-WAVELENGTH RESONANT-CAVITY PHOTODIODES, Electronics Letters, 29(24), 1993, pp. 2148-2149
Risultati: 1-11 |