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Results: 1-18 |
Results: 18
EPITAXIAL SILICON GROWN ON CEO2 SI(111) STRUCTURE BY MOLECULAR-BEAM EPITAXY/
Authors: JONES JT CROKE ET GARLAND CM MARSH OJ MCGILL TC
Citation: Jt. Jones et al., EPITAXIAL SILICON GROWN ON CEO2 SI(111) STRUCTURE BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2686-2689
STABILIZING THE SURFACE-MORPHOLOGY OF SI1-X-YGEXCY SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY THROUGH THE USE OF A SILICON-CARBIDESOURCE/
Authors: CROKE ET VAJO JJ HUNTER AT AHN CC CHANDRASEKHAR D LAURSEN T SMITH DJ MAYER JW
Citation: Et. Croke et al., STABILIZING THE SURFACE-MORPHOLOGY OF SI1-X-YGEXCY SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY THROUGH THE USE OF A SILICON-CARBIDESOURCE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1937-1942
ELECTRONIC-PROPERTIES OF SI SI1-X-YGEXCY HETEROJUNCTIONS/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T MAYER JW AHN CC
Citation: Bl. Stein et al., ELECTRONIC-PROPERTIES OF SI SI1-X-YGEXCY HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1639-1643
SINGLE-FEEDBACK AND DUAL-FEEDBACK TRANSIMPEDANCE AMPLIFIERS IMPLEMENTED BY SIGE HBT TECHNOLOGY
Authors: RIEH JS QASAIMEH O LU LH YANG K KATEHI LPB BHATTACHARYA P CROKE ET
Citation: Js. Rieh et al., SINGLE-FEEDBACK AND DUAL-FEEDBACK TRANSIMPEDANCE AMPLIFIERS IMPLEMENTED BY SIGE HBT TECHNOLOGY, IEEE microwave and guided wave letters, 8(2), 1998, pp. 63-65
SIGE-SI QUANTUM-WELL ELECTROABSORPTION MODULATORS
Authors: QASAIMEH O BHATTACHARYA P CROKE ET
Citation: O. Qasaimeh et al., SIGE-SI QUANTUM-WELL ELECTROABSORPTION MODULATORS, IEEE photonics technology letters, 10(6), 1998, pp. 807-809
MONOLITHICALLY INTEGRATED SIGE-SI PIN-HBT FRONT-END PHOTORECEIVERS
Authors: RIEH JS KLOTZKIN D QASAIMEH Q LU LH YANG K KATEHI LPB BHATTACHARYA P CROKE ET
Citation: Js. Rieh et al., MONOLITHICALLY INTEGRATED SIGE-SI PIN-HBT FRONT-END PHOTORECEIVERS, IEEE photonics technology letters, 10(3), 1998, pp. 415-417
X-BAND AND KU-BAND AMPLIFIERS BASED ON SI SIGE HBTS AND MICROMACHINEDLUMPED COMPONENTS/
Authors: RIEH JS LU LH KATEHI PB BHATTACHARYA P CROKE ET PONCHAK GE ALTEROVITZ SA
Citation: Js. Rieh et al., X-BAND AND KU-BAND AMPLIFIERS BASED ON SI SIGE HBTS AND MICROMACHINEDLUMPED COMPONENTS/, IEEE transactions on microwave theory and techniques, 46(5), 1998, pp. 685-694
DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SI SI1-X-YGEXCY HETEROSTRUCTURES/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T MAYER JW AHN CC
Citation: Bl. Stein et al., DEEP-LEVEL TRANSIENT SPECTROSCOPY OF SI SI1-X-YGEXCY HETEROSTRUCTURES/, Applied physics letters, 73(5), 1998, pp. 647-649
MEASUREMENT OF BAND OFFSETS IN SI SI1-XGEX AND SI/SI1-X-YGEXCY HETEROJUNCTIONS/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T BAIR AE MAYER JW AHN CC
Citation: Bl. Stein et al., MEASUREMENT OF BAND OFFSETS IN SI SI1-XGEX AND SI/SI1-X-YGEXCY HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1108-1111
MATERIALS CHARACTERIZATION OF SI1-X-YGEXCY SI SUPERLATTICE STRUCTURES/
Authors: LAURSEN T CHANDRASEKHAR D SMITH DJ MAYER JW CROKE ET HUNTER AT
Citation: T. Laursen et al., MATERIALS CHARACTERIZATION OF SI1-X-YGEXCY SI SUPERLATTICE STRUCTURES/, Thin solid films, 308, 1997, pp. 358-362
IMPROVED GROWTH-MORPHOLOGY OF SI-GE-C HETEROSTRUCTURES THROUGH THE USE OF SB SURFACTANT-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: CROKE ET HUNTER AT PETTERSSON PO AHN CC MCGILL TC
Citation: Et. Croke et al., IMPROVED GROWTH-MORPHOLOGY OF SI-GE-C HETEROSTRUCTURES THROUGH THE USE OF SB SURFACTANT-ASSISTED MOLECULAR-BEAM EPITAXY, Thin solid films, 294(1-2), 1997, pp. 105-111
CONTROL OF COMPOSITION AND CRYSTALLINITY IN THE MOLECULAR-BEAM EPITAXY OF STRAIN-COMPENSATED SI1-X-YGEXCY ALLOYS ON SI
Authors: CROKE ET HUNTER AT AHN CC LAURSEN T CHANDRASEKHAR D BAIR AE SMITH DJ MAYER JW
Citation: Et. Croke et al., CONTROL OF COMPOSITION AND CRYSTALLINITY IN THE MOLECULAR-BEAM EPITAXY OF STRAIN-COMPENSATED SI1-X-YGEXCY ALLOYS ON SI, Journal of crystal growth, 175, 1997, pp. 486-492
BAND OFFSETS IN SI SI1-X-YGEXCY HETEROJUNCTIONS MEASURED BY ADMITTANCE SPECTROSCOPY/
Authors: STEIN BL YU ET CROKE ET HUNTER AT LAURSEN T BAIR AE MAYER JW AHN CC
Citation: Bl. Stein et al., BAND OFFSETS IN SI SI1-X-YGEXCY HETEROJUNCTIONS MEASURED BY ADMITTANCE SPECTROSCOPY/, Applied physics letters, 70(25), 1997, pp. 3413-3415
CHARACTERIZATION OF SI SI1-YCY SUPERLATTICES GROWN BY SURFACTANT ASSISTED MOLECULAR-BEAM EPITAXY/
Authors: PETTERSSON PO AHN CC MCGILL TC CROKE ET HUNTER AT
Citation: Po. Pettersson et al., CHARACTERIZATION OF SI SI1-YCY SUPERLATTICES GROWN BY SURFACTANT ASSISTED MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3030-3034
APPLICATIONS OF VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY TO STRAINEDSIGE ALLOY HETEROSTRUCTURES
Authors: HEYD AR ALTEROVITZ SA CROKE ET WANG KL LEE CH
Citation: Ar. Heyd et al., APPLICATIONS OF VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY TO STRAINEDSIGE ALLOY HETEROSTRUCTURES, Thin solid films, 270(1-2), 1995, pp. 91-96
SB-SURFACTANT-MEDIATED GROWTH OF SI SI1-YCY SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/
Authors: PETTERSSON PO AHN CC MCGILL TC CROKE ET HUNTER AT
Citation: Po. Pettersson et al., SB-SURFACTANT-MEDIATED GROWTH OF SI SI1-YCY SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2530-2532
HIGH-MOBILITY SI1-XGEX PMOS TRANSISTORS TO 5K
Authors: SCOTT JA CROKE ET PLUMMER JD
Citation: Ja. Scott et al., HIGH-MOBILITY SI1-XGEX PMOS TRANSISTORS TO 5K, Journal de physique. IV, 4(C6), 1994, pp. 69-74
CHARACTERIZATION OF SIXGE1-X SI HETEROSTRUCTURES FOR DEVICE APPLICATIONS USING SPECTROSCOPIC ELLIPSOMETRY/
Authors: SIEG RM ALTEROVITZ SA CROKE ET HARRELL MJ TANNER M WANG KL MENA RA YOUNG PG
Citation: Rm. Sieg et al., CHARACTERIZATION OF SIXGE1-X SI HETEROSTRUCTURES FOR DEVICE APPLICATIONS USING SPECTROSCOPIC ELLIPSOMETRY/, Journal of applied physics, 74(1), 1993, pp. 586-595
Risultati: 1-18 |