AAAAAA

   
Results: 1-12 |
Results: 12
Seismic neighboring traces attenuation tomography in time domain
Authors: Wang, H Chang, X Liu, YK Cai, SJ
Citation: H. Wang et al., Seismic neighboring traces attenuation tomography in time domain, CH J GEO-CH, 44(3), 2001, pp. 396-403
An X-band GaNHEMT power amplifier design using an artificial neural network modeling technique
Authors: Lee, SY Cetiner, BA Torpi, H Cai, SJ Li, J Alt, K Chen, YL Wen, CP Wang, KL Itoh, T
Citation: Sy. Lee et al., An X-band GaNHEMT power amplifier design using an artificial neural network modeling technique, IEEE DEVICE, 48(3), 2001, pp. 495-501
High breakdown voltage GaNHFET with field plate
Authors: Li, J Cai, SJ Pan, GZ Chen, YL Wen, CP Wang, KL
Citation: J. Li et al., High breakdown voltage GaNHFET with field plate, ELECTR LETT, 37(3), 2001, pp. 196-197
Nitric oxide synthase (nNOS) gene transfer modifies venous bypass graft remodeling - Effects on vascular smooth muscle cell differentiation and superoxide production
Authors: West, NEJ Qian, HS Guzik, TJ Black, E Cai, SJ George, SE Channon, KM
Citation: Nej. West et al., Nitric oxide synthase (nNOS) gene transfer modifies venous bypass graft remodeling - Effects on vascular smooth muscle cell differentiation and superoxide production, CIRCULATION, 104(13), 2001, pp. 1526-1532
A knowledge-aided line network oriented vectorisation method for engineering drawings
Authors: Song, JQ Su, F Chen, JB Cai, SJ
Citation: Jq. Song et al., A knowledge-aided line network oriented vectorisation method for engineering drawings, PATTERN A A, 3(2), 2000, pp. 142-152
Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE
Authors: Cai, SJ Tang, YS Li, R Wei, YY Wong, L Chen, YL Wang, KL Chen, M Zhao, YF Schrimpf, RD Keay, JC Galloway, KF
Citation: Sj. Cai et al., Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE, IEEE DEVICE, 47(2), 2000, pp. 304-307
Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate
Authors: Liu, JL Cai, SJ Jin, GL Tang, YS Wang, KL
Citation: Jl. Liu et al., Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate, SUPERLATT M, 25(1-2), 1999, pp. 477-479
An Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistorwith F-max of 107 GHz
Authors: Li, R Cai, SJ Wong, L Chen, Y Wang, KL Smith, RP Martin, SC Boutros, KS Redwing, JM
Citation: R. Li et al., An Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistorwith F-max of 107 GHz, IEEE ELEC D, 20(7), 1999, pp. 323-325
Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE)
Authors: Liu, JL Cai, SJ Jin, GL Thomas, SG Wang, KL
Citation: Jl. Liu et al., Growth of Si whiskers on Au/Si(1 1 1) substrate by gas source molecular beam epitaxy (MBE), J CRYST GR, 200(1-2), 1999, pp. 106-111
Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
Authors: Balandin, A Morozov, S Wijeratne, G Cai, SJ Li, R Li, J Wang, KL Viswanathan, CR Dubrovskii, Y
Citation: A. Balandin et al., Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors, APPL PHYS L, 75(14), 1999, pp. 2064-2066
Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy
Authors: Liu, JL Cai, SJ Jin, GL Wang, KL
Citation: Jl. Liu et al., Wirelike growth of Si on an Au/Si(111) substrate by gas source molecular beam epitaxy, EL SOLID ST, 1(4), 1998, pp. 188-190
High performance AlGaN/GaN HEMT with improved ohmic contacts
Authors: Cai, SJ Li, R Chen, YL Wong, L Wu, WG Thomas, SG Wang, KL
Citation: Sj. Cai et al., High performance AlGaN/GaN HEMT with improved ohmic contacts, ELECTR LETT, 34(24), 1998, pp. 2354-2356
Risultati: 1-12 |