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Results: 1-16 |
Results: 16
The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Liao, Y Winser, AJ Harrison, I Li, T Campion, RP Staddon, CR Davis, CS
Citation: Ct. Foxon et al., The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 203-206
On the origin of blue emission from As-doped GaN
Authors: Harrison, I Novikov, SV Li, T Campion, RP Staddon, CR Davis, CS Liao, Y Winser, AJ Foxon, CT
Citation: I. Harrison et al., On the origin of blue emission from As-doped GaN, PHYS ST S-B, 228(1), 2001, pp. 213-217
The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Liao, Y Winser, AJ Harrison, I
Citation: Ct. Foxon et al., The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 219-222
Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system
Authors: Novikov, SV Li, T Winser, AJ Campion, RP Staddon, CR Davic, CS Harrison, I Foxon, CT
Citation: Sv. Novikov et al., Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system, PHYS ST S-B, 228(1), 2001, pp. 223-225
The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers
Authors: Novikov, SV Li, T Winser, AJ Foxon, CT Campion, RP Staddon, CR Davis, CS Harrison, I Kovarsky, AP Ber, BJ
Citation: Sv. Novikov et al., The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers, PHYS ST S-B, 228(1), 2001, pp. 227-229
Growth of GaNAs films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Davis, CS Cheng, TS Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Growth of GaNAs films by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 486-490
Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire
Authors: Davis, CS Novikov, SV Cheng, TS Campion, RP Foxon, CT
Citation: Cs. Davis et al., Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire, J CRYST GR, 226(2-3), 2001, pp. 203-208
Anisotropic in-plane properties of (103)/(013) oriented YBa2Cu3O7-delta thin films grown on exact and miscut (110) SrTiO3 substrates
Authors: Campion, RP King, PJ Benedict, KA Bowley, RM Czerwinka, PS Misat, S Morley, SM
Citation: Rp. Campion et al., Anisotropic in-plane properties of (103)/(013) oriented YBa2Cu3O7-delta thin films grown on exact and miscut (110) SrTiO3 substrates, PHYS REV B, 61(9), 2000, pp. 6387-6400
Investigation of the electrical dissipation properties of in-plane alignedalpha-axis YBCO films grown on (100) LaSrGaO4 substrates
Authors: Misat, S King, PJ Fuchs, D Villegier, JC Campion, RP Czerwinka, PS
Citation: S. Misat et al., Investigation of the electrical dissipation properties of in-plane alignedalpha-axis YBCO films grown on (100) LaSrGaO4 substrates, PHYSICA C, 331(3-4), 2000, pp. 241-253
The electrical properties of YBa2Cu3O7-delta thin films of various thicknesses grown upon MgO substrates
Authors: Misat, S King, PJ Fuchs, D Villegier, JC Czerwinka, PS Campion, RP
Citation: S. Misat et al., The electrical properties of YBa2Cu3O7-delta thin films of various thicknesses grown upon MgO substrates, PHYSICA C, 330(1-2), 2000, pp. 72-84
Arsenic-doped GaN grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Cheng, TS Davis, CS Campion, RP Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Arsenic-doped GaN grown by molecular beam epitaxy, J CRYST GR, 219(4), 2000, pp. 327-334
Photoenhanced wet chemical etching of MBE grown gallium nitride
Authors: Stanton, NM Kent, AJ Hawker, P Cheng, TS Foxon, CT Korakakis, D Campion, RP Staddon, CR Middleton, JR
Citation: Nm. Stanton et al., Photoenhanced wet chemical etching of MBE grown gallium nitride, MAT SCI E B, 68(1), 1999, pp. 52-55
Investigations of the in-plane anisotropy and the critical behaviour of 10degrees-tilted YBa2Cu3O7-delta films grown upon (106) SrTiO3 substrates
Authors: Czerwinka, PS Campion, RP Horbelt, KF King, PJ Misat, S Morley, SM Habermeier, HU Leibold, B
Citation: Ps. Czerwinka et al., Investigations of the in-plane anisotropy and the critical behaviour of 10degrees-tilted YBa2Cu3O7-delta films grown upon (106) SrTiO3 substrates, PHYSICA C, 324(2), 1999, pp. 96-112
Studies of the vortex related phase transition in YBCO thin films with strong in-plane anisotropy
Authors: Misat, S King, PJ Campion, RP Czerwinka, PS Fuchs, D Villegier, JC
Citation: S. Misat et al., Studies of the vortex related phase transition in YBCO thin films with strong in-plane anisotropy, J L TEMP PH, 117(5-6), 1999, pp. 1381-1385
Ga-metal inclusions in GaN grown on sapphire
Authors: Blant, AV Novikov, SV Cheng, TS Flannery, LB Harrison, I Campion, RP Larkins, EC Kribes, Y Foxon, CT
Citation: Av. Blant et al., Ga-metal inclusions in GaN grown on sapphire, J CRYST GR, 203(3), 1999, pp. 349-354
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
Authors: Cheng, TS Novikov, SV Lebedev, VB Campion, RP Jeffs, NJ Melnik, YV Tsvetkov, DV Stepanov, SI Cherenkov, AE Dmitriev, VA Korakakis, D Hughes, OH Foxon, CT
Citation: Ts. Cheng et al., The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates, J CRYST GR, 197(1-2), 1999, pp. 12-18
Risultati: 1-16 |