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Results: 1-10 |
Results: 10
Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Cappy, A
Citation: J. Mateos et al., Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs, MICROEL REL, 41(1), 2001, pp. 73-77
HEMT's capability for millimeter wave applications
Authors: Bollaert, S Cordier, Y Zaknoune, M Parenty, T Happy, H Cappy, A
Citation: S. Bollaert et al., HEMT's capability for millimeter wave applications, ANN TELECOM, 56(1-2), 2001, pp. 15-26
The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter
Authors: Bollaert, S Cordier, Y Zaknoune, M Happy, H Hoel, V Lepilliet, S Theron, D Cappy, A
Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027
Monte Carlo simulator for the design optimization of low-noise HEMTs
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Cappy, A
Citation: J. Mateos et al., Monte Carlo simulator for the design optimization of low-noise HEMTs, IEEE DEVICE, 47(10), 2000, pp. 1950-1956
Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Happy, H Cappy, A
Citation: J. Mateos et al., Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's, IEEE DEVICE, 47(1), 2000, pp. 250-253
Noise modelling in linear and nonlinear devices
Authors: Cappy, A Danneville, F Dambrine, G Tamen, B
Citation: A. Cappy et al., Noise modelling in linear and nonlinear devices, IEICE TR EL, E82C(6), 1999, pp. 900-907
Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
Authors: Bollaert, S Cordier, Y Hoel, V Zaknoune, M Happy, H Lepilliet, S Cappy, A
Citation: S. Bollaert et al., Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate, IEEE ELEC D, 20(3), 1999, pp. 123-125
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
Authors: Mateos, J Gonzalez, T Pardo, D Hoel, V Cappy, A
Citation: J. Mateos et al., Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis, SEMIC SCI T, 14(9), 1999, pp. 864-870
Noise analysis in devices under nonlinear operation
Authors: Cappy, A Danneville, F Dambrine, G Tamen, B
Citation: A. Cappy et al., Noise analysis in devices under nonlinear operation, SOL ST ELEC, 43(1), 1999, pp. 21-26
High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits
Authors: Dambrine, G Raskin, JP Danneville, F Vanhoenacker-Janvier, D Colinge, JP Cappy, A
Citation: G. Dambrine et al., High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits, IEEE DEVICE, 46(8), 1999, pp. 1733-1741
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