Authors:
Mateos, J
Gonzalez, T
Pardo, D
Hoel, V
Cappy, A
Citation: J. Mateos et al., Monte Carlo simulation of electronic characteristics in short channel delta-doped AlInAs/GaInAs HEMTs, MICROEL REL, 41(1), 2001, pp. 73-77
Authors:
Bollaert, S
Cordier, Y
Zaknoune, M
Happy, H
Hoel, V
Lepilliet, S
Theron, D
Cappy, A
Citation: S. Bollaert et al., The indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: a new structure parameter, SOL ST ELEC, 44(6), 2000, pp. 1021-1027
Authors:
Mateos, J
Gonzalez, T
Pardo, D
Hoel, V
Happy, H
Cappy, A
Citation: J. Mateos et al., Improved Monte Carlo algorithm for the simulation of delta-doped AlInAs/GaInAs HEMT's, IEEE DEVICE, 47(1), 2000, pp. 250-253
Authors:
Dambrine, G
Raskin, JP
Danneville, F
Vanhoenacker-Janvier, D
Colinge, JP
Cappy, A
Citation: G. Dambrine et al., High-frequency four noise parameters of silicon-on-insulator-based technology MOSFET for the design of low-noise RF integrated circuits, IEEE DEVICE, 46(8), 1999, pp. 1733-1741