AAAAAA

   
Results: 1-20 |
Results: 20
Defect analysis of n-type silicon strained layers
Authors: Simoen, E Loo, R Roussel, P Caymax, M Bender, H Claeys, C Herzog, HJ Blondeel, A Clauws, P
Citation: E. Simoen et al., Defect analysis of n-type silicon strained layers, MAT SC S PR, 4(1-3), 2001, pp. 225-227
Porous silicon as an intermediate layer for thin-film solar cell
Authors: Bilyalov, R Stalmans, L Beaucarne, G Loo, R Caymax, M Poortmans, J Nijs, J
Citation: R. Bilyalov et al., Porous silicon as an intermediate layer for thin-film solar cell, SOL EN MAT, 65(1-4), 2001, pp. 477-485
Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime
Authors: Yousif, MYA Willander, M Lundgren, P Caymax, M
Citation: Mya. Yousif et al., Behaviour of poly-Si1-xGex-gated MOS capacitors under different electricalstress conditions in the direct tunnelling regime, SEMIC SCI T, 16(6), 2001, pp. 478-482
Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor
Authors: Loo, R Meunier-Beillard, P Vanhaeren, D Bender, H Caymax, M Vandervorst, W Dentel, D Goryll, M Vescan, L
Citation: R. Loo et al., Structural and optical properties of Ge islands grown in an industrial chemical vapor deposition reactor, J APPL PHYS, 90(5), 2001, pp. 2565-2574
Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers
Authors: Rajendran, K Schoenmaker, W Decoutere, S Loo, R Caymax, M Vandervorst, W
Citation: K. Rajendran et al., Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers, IEEE DEVICE, 48(9), 2001, pp. 2022-2031
Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples
Authors: Stephenson, R Verhulst, A De Wolf, P Caymax, M Vandervorst, W
Citation: R. Stephenson et al., Nonmonotonic behavior of the scanning capacitance microscope for large dynamic range samples, J VAC SCI B, 18(1), 2000, pp. 405-408
On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology
Authors: Yousif, MYA Friesel, M Willander, M Lundgren, P Caymax, M
Citation: Mya. Yousif et al., On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS technology, SOL ST ELEC, 44(8), 2000, pp. 1425-1429
Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon
Authors: Jin, S Bender, H Stalmans, L Bilyalov, R Poortmans, J Loo, R Caymax, M
Citation: S. Jin et al., Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon, J CRYST GR, 212(1-2), 2000, pp. 119-127
Drift mobilities and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3 < x < 0.4) grown on Si
Authors: Lander, RJP Ponomarev, YV van Berkum, JGM de Boer, WB Loo, R Caymax, M
Citation: Rjp. Lander et al., Drift mobilities and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3 < x < 0.4) grown on Si, J APPL PHYS, 88(4), 2000, pp. 2016-2023
Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity
Authors: Augendre, E Rooyackers, R Caymax, M Vandamme, EP De Keersgieter, A Perello, C Van Dievel, M Pochet, S Badenes, G
Citation: E. Augendre et al., Elevated source/drain by sacrificial selective epitaxy for high performance deep submicron CMOS: Process window versus complexity, IEEE DEVICE, 47(7), 2000, pp. 1484-1491
On the behavior of p-n junction solar cells made in fine-grained silicon layers
Authors: Beaucarne, G Poortmans, J Caymax, M Nijs, J Mertens, R
Citation: G. Beaucarne et al., On the behavior of p-n junction solar cells made in fine-grained silicon layers, IEEE DEVICE, 47(5), 2000, pp. 1118-1120
Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques
Authors: Loo, R Caymax, M Libezny, M Blavier, G Brijs, B Geenen, L Vandervorst, W
Citation: R. Loo et al., Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques, J ELCHEM SO, 147(2), 2000, pp. 751-755
Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes
Authors: Ohyama, H Hayama, K Hakata, T Simoen, E Claeys, C Poortmans, J Caymax, M Takami, Y Sunaga, H
Citation: H. Ohyama et al., Impact of high energy particle irradiation on the electrical performance of Si1-xGex epitaxial diodes, J MAT S-M E, 10(5-6), 1999, pp. 335-337
Radiation damage in Si1-xGex heteroepitaxial devices
Authors: Ohyama, H Simoen, E Claeys, C Vanhellemont, J Hayama, K Tokuyama, J Takami, Y Sunaga, H Poortmans, J Caymax, M
Citation: H. Ohyama et al., Radiation damage in Si1-xGex heteroepitaxial devices, J RAD NUCL, 239(2), 1999, pp. 351-355
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers
Authors: Conard, T De Witte, H Loo, R Verheyen, P Vandervorst, W Caymax, M Gijbels, R
Citation: T. Conard et al., XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers, THIN SOL FI, 344, 1999, pp. 583-586
High quality, relaxed SiGe epitaxial layers for solar cell application
Authors: Said, K Poortmans, J Caymax, M Loo, R Daami, A Bremond, G Kruger, O Kittler, M
Citation: K. Said et al., High quality, relaxed SiGe epitaxial layers for solar cell application, THIN SOL FI, 337(1-2), 1999, pp. 85-89
Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells
Authors: Said, K Poortmans, J Caymax, M Nijs, JF Debarge, L Christoffel, E Slaoui, A
Citation: K. Said et al., Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells, IEEE DEVICE, 46(10), 1999, pp. 2103-2110
Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications
Authors: Sedky, S Fiorini, P Caymax, M Loreti, S Baert, K Hermans, L Mertens, R
Citation: S. Sedky et al., Structural and mechanical properties of polycrystalline silicon germanium for micromachining applications, J MICROEL S, 7(4), 1998, pp. 365-372
Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures
Authors: Loo, R Caymax, M Simoen, E Howard, D Goryll, M Klaes, D Vescan, L Gravesteijn, D Pettersson, H Zhang, X
Citation: R. Loo et al., Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures, THIN SOL FI, 336(1-2), 1998, pp. 227-231
The vertical heterojunction MOSFET
Authors: De Meyer, K Caymax, M Collaert, N Loo, R Verheyen, P
Citation: K. De Meyer et al., The vertical heterojunction MOSFET, THIN SOL FI, 336(1-2), 1998, pp. 299-305
Risultati: 1-20 |