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Results: 1-9 |
Results: 9
InGaAs nanodomains formed in situ on the surface of (Al,Ga)As
Authors: Krestnikov, IL Cherkashin, NA Sizov, DS Bedarev, DA Kochnev, IV Lantratov, VM Ledentsov, NN
Citation: Il. Krestnikov et al., InGaAs nanodomains formed in situ on the surface of (Al,Ga)As, TECH PHYS L, 27(3), 2001, pp. 233-235
Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy
Authors: Mamutin, VV Cherkashin, NA Vekshin, VA Zhmerik, VN Ivanov, SV
Citation: Vv. Mamutin et al., Transmission electron microscopy of GaN columnar nanostructures grown by molecular beam epitaxy, PHYS SOL ST, 43(1), 2001, pp. 151-156
Reversibility of the island shape, volume and density in Stranski-Krastanow growth
Authors: Ledentsov, NN Shchukin, VA Bimberg, D Ustinov, VM Cherkashin, NA Musikhin, YG Volovik, BV Cirlin, GE Alferov, ZI
Citation: Nn. Ledentsov et al., Reversibility of the island shape, volume and density in Stranski-Krastanow growth, SEMIC SCI T, 16(6), 2001, pp. 502-506
Optical and structural properties of self-organized InGaAsN/GaAs nanostructures
Authors: Volovik, BV Kovsh, AR Passenberg, W Kuenzel, H Grote, N Cherkashin, NA Musikhin, YG Ledentsov, NN Bimberg, D Ustinov, VM
Citation: Bv. Volovik et al., Optical and structural properties of self-organized InGaAsN/GaAs nanostructures, SEMIC SCI T, 16(3), 2001, pp. 186-190
Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs
Authors: Egorov, VA Polyakov, NK Tonkikh, AA Petrov, VN Cirlin, GE Volovik, BV Zhukov, AE Musikhin, YG Cherkashin, NA Ustinov, VM
Citation: Va. Egorov et al., Photoluminescence emission (1.3-1.4 mu m) from quantum dots heterostructures based on GaAs, APPL SURF S, 175, 2001, pp. 243-248
TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate
Authors: Cherkashin, NA Bert, NA Musikhin, YG Novikov, SV Cheng, TS Foxon, CT
Citation: Na. Cherkashin et al., TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate, SEMICONDUCT, 34(8), 2000, pp. 867-871
Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands
Authors: Sobolev, MM Kochnev, IV Lantratov, VM Bert, NA Cherkashin, NA Ledentsov, NN Bedarev, DA
Citation: Mm. Sobolev et al., Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands, SEMICONDUCT, 34(2), 2000, pp. 195-204
1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
Authors: Ledentsov, NN Maximov, MV Bimberg, D Maka, T Torres, CMS Kochnev, IV Krestnikov, IL Lantratov, VM Cherkashin, NA Musikhin, YM Alferov, ZI
Citation: Nn. Ledentsov et al., 1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition, SEMIC SCI T, 15(6), 2000, pp. 604-607
Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots
Authors: Sobolev, MM Kochnev, IV Lantratov, VM Cherkashin, NA Emtsev, VV
Citation: Mm. Sobolev et al., Hole and electron traps in the InGaAs/GaAs heterostructures with quantum dots, PHYSICA B, 274, 1999, pp. 959-962
Risultati: 1-9 |