AAAAAA

   
Results: 1-25 | 26-39
Results: 1-25/39
Occupational asthma and rhinitis caused by multiple herbal agents in a pharmacist
Authors: Lee, SK Cho, HK Cho, SH Kim, SS Nahm, DH Park, HS
Citation: Sk. Lee et al., Occupational asthma and rhinitis caused by multiple herbal agents in a pharmacist, ANN ALLER A, 86(4), 2001, pp. 469-474
Growth of a GaN overlayer with low threading dislocation density using stacking faults
Authors: Cho, HK Lee, JY Kim, KS Yang, GM
Citation: Hk. Cho et al., Growth of a GaN overlayer with low threading dislocation density using stacking faults, J KOR PHYS, 39(4), 2001, pp. 622-626
Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices
Authors: Cho, HK Lee, JY Kim, KS Yang, GM
Citation: Hk. Cho et al., Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices, J KOR PHYS, 39(3), 2001, pp. 425-428
Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells
Authors: Lee, WH Kim, KS Yang, GM Hong, CH Lim, KY Suh, EK Lee, HJ Cho, HK Lee, JY
Citation: Wh. Lee et al., Thermal annealing effects on the photoluminescence of InGaN/GaN quantum wells, J KOR PHYS, 39(1), 2001, pp. 136-140
Nano-scale island (dot)-induced optical emission in InGaN quantum wells
Authors: Kim, KS Lee, WH Kim, CS Yang, GM Hong, CH Suh, EK Lim, KY Lee, HJ Cho, HK Lee, JY Yang, M Lee, YH Seo, JM
Citation: Ks. Kim et al., Nano-scale island (dot)-induced optical emission in InGaN quantum wells, J KOR PHYS, 39(1), 2001, pp. 141-146
Effects of growth interruption on high indium content InGaN/GaN multi quantum wells
Authors: Cheong, MG Choi, RJ Kim, CS Yoon, HS Hong, CH Suh, EK Lee, HJ Cho, HK Lee, JY
Citation: Mg. Cheong et al., Effects of growth interruption on high indium content InGaN/GaN multi quantum wells, J KOR PHYS, 38(6), 2001, pp. 701-705
Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structuresduring metalorganic chemical vapor deposition
Authors: Choi, SC Song, YH Jeon, SL Jang, HJ Yang, GM Cho, HK Lee, JY
Citation: Sc. Choi et al., Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structuresduring metalorganic chemical vapor deposition, J KOR PHYS, 38(4), 2001, pp. 413-415
Structural and optical characteristics of InGaN/GaN multiple quantum wellswith different growth interruption
Authors: Cho, HK Lee, JY Sharma, N Humphreys, J Yang, GM Kim, CS
Citation: Hk. Cho et al., Structural and optical characteristics of InGaN/GaN multiple quantum wellswith different growth interruption, PHYS ST S-B, 228(1), 2001, pp. 165-168
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures
Authors: Kim, CS Hong, YK Hong, CH Suh, EK Lee, HJ Kim, MH Cho, HK Lee, JY
Citation: Cs. Kim et al., Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures, PHYS ST S-B, 228(1), 2001, pp. 183-186
Effect of isoelectronic in doping on deep levels in GaN grown by MOCVD
Authors: Cho, HK Kim, CS Hong, YK Kim, YW Hong, CH Suh, EK Lee, HJ
Citation: Hk. Cho et al., Effect of isoelectronic in doping on deep levels in GaN grown by MOCVD, PHYS ST S-B, 228(1), 2001, pp. 231-234
Structural properties of GaN grown by pendeo-epitaxy with in-doping
Authors: Hong, YK Kim, CS Jung, HS Hong, CH Kim, MH Leem, SJ Cho, HK Lee, JY
Citation: Yk. Hong et al., Structural properties of GaN grown by pendeo-epitaxy with in-doping, PHYS ST S-B, 228(1), 2001, pp. 235-238
Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions
Authors: Cho, HK Lee, JY Kim, CS Yang, GM
Citation: Hk. Cho et al., Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions, J ELEC MAT, 30(10), 2001, pp. 1348-1352
Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layergrown by metalorganic chemical vapor deposition
Authors: Cho, HK Lee, JY Kim, KS Yang, GM
Citation: Hk. Cho et al., Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layergrown by metalorganic chemical vapor deposition, SOL ST ELEC, 45(12), 2001, pp. 2023-2027
Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition
Authors: Cho, HK Lee, JY Jeon, SR Yang, GM
Citation: Hk. Cho et al., Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition, J CRYST GR, 233(4), 2001, pp. 667-672
Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition
Authors: Cho, HK Lee, JY Kim, CS Yang, GM Sharma, N Humphreys, C
Citation: Hk. Cho et al., Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition, J CRYST GR, 231(4), 2001, pp. 466-473
Electron traps and growth rate of buffer layers in unintentionally doped GaN
Authors: Cho, HK Kim, KS Hong, CH Lee, HJ
Citation: Hk. Cho et al., Electron traps and growth rate of buffer layers in unintentionally doped GaN, J CRYST GR, 223(1-2), 2001, pp. 38-42
Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density
Authors: Cho, HK Lee, JY Choi, SC Yang, GM
Citation: Hk. Cho et al., Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density, J CRYST GR, 222(1-2), 2001, pp. 104-109
Crystallization of amorphous WNx films
Authors: Suh, BS Cho, HK Lee, YJ Lee, WJ Park, CO
Citation: Bs. Suh et al., Crystallization of amorphous WNx films, J APPL PHYS, 89(7), 2001, pp. 4128-4133
Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition
Authors: Cho, HK Lee, JY Kim, KS Yang, GM Song, JH Yu, PW
Citation: Hk. Cho et al., Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition, J APPL PHYS, 89(5), 2001, pp. 2617-2621
Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition
Authors: Cho, HK Lee, JY Jeon, SR Yang, GM
Citation: Hk. Cho et al., Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition, APPL PHYS L, 79(23), 2001, pp. 3788-3790
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
Authors: Cho, HK Lee, JY Yang, GM Kim, CS
Citation: Hk. Cho et al., Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density, APPL PHYS L, 79(2), 2001, pp. 215-217
Effect of growth interruptions on the light emission and indium clusteringof InGaN/GaN multiple quantum wells
Authors: Cho, HK Lee, JY Sharma, N Humphreys, CJ Yang, GM Kim, CS Song, JH Yu, PW
Citation: Hk. Cho et al., Effect of growth interruptions on the light emission and indium clusteringof InGaN/GaN multiple quantum wells, APPL PHYS L, 79(16), 2001, pp. 2594-2596
Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications
Authors: Kim, KS Hong, CH Lee, WH Kim, CS Cha, OH Yang, GM Suh, EK Lim, KY Lee, HJ Cho, HK Lee, JY Seo, JM
Citation: Ks. Kim et al., Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications, MRS I J N S, 5, 2000, pp. NIL_757-NIL_761
Fabrication of bulk Mg-Cu-Ag-Y glassy alloy by squeeze casting
Authors: Kang, HG Park, ES Kim, WT Kim, DH Cho, HK
Citation: Hg. Kang et al., Fabrication of bulk Mg-Cu-Ag-Y glassy alloy by squeeze casting, MATER T JIM, 41(7), 2000, pp. 846-849
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaNand sapphire substrate by metalorganic chemical vapor deposition
Authors: Cho, HK Lee, JY Kim, KS Yang, GM
Citation: Hk. Cho et al., Phase separation and stacking fault of InxGa1-xN layers grown on thick GaNand sapphire substrate by metalorganic chemical vapor deposition, J CRYST GR, 220(3), 2000, pp. 197-203
Risultati: 1-25 | 26-39