Citation: Hk. Cho et al., Effect of a tensile strained Al0.1Ga0.9N capping layer on the optical and structural properties in InGaN/GaN superlattices, J KOR PHYS, 39(3), 2001, pp. 425-428
Citation: Sc. Choi et al., Thermal etching effects on InGaN/GaN and GaN/AlGaN quantum well structuresduring metalorganic chemical vapor deposition, J KOR PHYS, 38(4), 2001, pp. 413-415
Authors:
Cho, HK
Lee, JY
Sharma, N
Humphreys, J
Yang, GM
Kim, CS
Citation: Hk. Cho et al., Structural and optical characteristics of InGaN/GaN multiple quantum wellswith different growth interruption, PHYS ST S-B, 228(1), 2001, pp. 165-168
Authors:
Kim, CS
Hong, YK
Hong, CH
Suh, EK
Lee, HJ
Kim, MH
Cho, HK
Lee, JY
Citation: Cs. Kim et al., Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures, PHYS ST S-B, 228(1), 2001, pp. 183-186
Citation: Hk. Cho et al., Structural and optical investigation of InGaN/GaN multiple quantum well structures with various indium compositions, J ELEC MAT, 30(10), 2001, pp. 1348-1352
Citation: Hk. Cho et al., Effect of Si, Mg, and Mg-Zn doping on structural properties of a GaN layergrown by metalorganic chemical vapor deposition, SOL ST ELEC, 45(12), 2001, pp. 2023-2027
Citation: Hk. Cho et al., Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition, J CRYST GR, 233(4), 2001, pp. 667-672
Authors:
Cho, HK
Lee, JY
Kim, CS
Yang, GM
Sharma, N
Humphreys, C
Citation: Hk. Cho et al., Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition, J CRYST GR, 231(4), 2001, pp. 466-473
Citation: Hk. Cho et al., Study on the growth of crack-free AlxGa1-xN (0.133 >= x > 0.1)/GaN heterostructure with low dislocation density, J CRYST GR, 222(1-2), 2001, pp. 104-109
Authors:
Cho, HK
Lee, JY
Kim, KS
Yang, GM
Song, JH
Yu, PW
Citation: Hk. Cho et al., Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition, J APPL PHYS, 89(5), 2001, pp. 2617-2621
Citation: Hk. Cho et al., Influence of Mg doping on structural defects in AlGaN layers grown by metalorganic chemical vapor deposition, APPL PHYS L, 79(23), 2001, pp. 3788-3790
Citation: Hk. Cho et al., Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density, APPL PHYS L, 79(2), 2001, pp. 215-217
Authors:
Cho, HK
Lee, JY
Sharma, N
Humphreys, CJ
Yang, GM
Kim, CS
Song, JH
Yu, PW
Citation: Hk. Cho et al., Effect of growth interruptions on the light emission and indium clusteringof InGaN/GaN multiple quantum wells, APPL PHYS L, 79(16), 2001, pp. 2594-2596
Authors:
Kim, KS
Hong, CH
Lee, WH
Kim, CS
Cha, OH
Yang, GM
Suh, EK
Lim, KY
Lee, HJ
Cho, HK
Lee, JY
Seo, JM
Citation: Ks. Kim et al., Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications, MRS I J N S, 5, 2000, pp. NIL_757-NIL_761
Citation: Hk. Cho et al., Phase separation and stacking fault of InxGa1-xN layers grown on thick GaNand sapphire substrate by metalorganic chemical vapor deposition, J CRYST GR, 220(3), 2000, pp. 197-203