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Results: 1-12 |
Results: 12
Optimization of short channel effect with arsenic halo implant through polysilicon gate
Authors: Chen, CM Chang, CY Chou, JW Cheng, YC
Citation: Cm. Chen et al., Optimization of short channel effect with arsenic halo implant through polysilicon gate, JPN J A P 1, 40(9A), 2001, pp. 5257-5261
A capacitance ratio method used for L-eff extraction of an advanced metal-oxide-semiconductor device with halo implant
Authors: Huang, HS Lin, SJ Chen, YJ Chen, IK Lee, R Chou, JW Hong, G
Citation: Hs. Huang et al., A capacitance ratio method used for L-eff extraction of an advanced metal-oxide-semiconductor device with halo implant, JPN J A P 1, 40(6A), 2001, pp. 3992-3995
A modified capacitance-voltage method used for L-eff extraction and process monitoring in advanced 0.15 mu m complementary metal-oxide-semiconductor technology and beyond
Authors: Huang, HS Shiu, JS Lin, SJ Chou, JW Lee, R Chen, C Hong, G
Citation: Hs. Huang et al., A modified capacitance-voltage method used for L-eff extraction and process monitoring in advanced 0.15 mu m complementary metal-oxide-semiconductor technology and beyond, JPN J A P 1, 40(3A), 2001, pp. 1222-1226
The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor
Authors: Chen, CM Chang, SJ Chou, JW Lin, T Yeh, WK Chang, CY Luo, WZ Lee, YJ Chao, TS Huang, TY
Citation: Cm. Chen et al., The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor, JPN J A P 1, 40(1), 2001, pp. 75-79
Optimum treatment for improvement of indium-halo structure for sub-0.1 mu m n-type metal-oxide-semiconductor field-effect transistor
Authors: Yeh, WK Chou, JW
Citation: Wk. Yeh et Jw. Chou, Optimum treatment for improvement of indium-halo structure for sub-0.1 mu m n-type metal-oxide-semiconductor field-effect transistor, JPN J A P 2, 40(11A), 2001, pp. L1139-L1141
Stability of reduced organic sulfur in humic acid as affected by aeration and pH
Authors: Hutchison, KJ Hesterberg, D Chou, JW
Citation: Kj. Hutchison et al., Stability of reduced organic sulfur in humic acid as affected by aeration and pH, SOIL SCI SO, 65(3), 2001, pp. 704-709
Optimum halo structure for sub-0.1 mu m CMOSFETs
Authors: Yeh, WK Chou, JW
Citation: Wk. Yeh et Jw. Chou, Optimum halo structure for sub-0.1 mu m CMOSFETs, IEEE DEVICE, 48(10), 2001, pp. 2357-2362
Molecular scale characteristics of Cu(II) bonding in goethite-humate complexes
Authors: Alcacio, TE Hesterberg, D Chou, JW Martin, JD Beauchemin, S Sayers, DE
Citation: Te. Alcacio et al., Molecular scale characteristics of Cu(II) bonding in goethite-humate complexes, GEOCH COS A, 65(9), 2001, pp. 1355-1366
Bonding of Hg(II) to reduced organic, sulfur in humic acid as affected by S/Hg ratio
Authors: Hesterberg, D Chou, JW Hutchison, KJ Sayers, DE
Citation: D. Hesterberg et al., Bonding of Hg(II) to reduced organic, sulfur in humic acid as affected by S/Hg ratio, ENV SCI TEC, 35(13), 2001, pp. 2741-2745
Shallow-trench isolation with raised-field-oxide structure
Authors: Chen, CM Chang, CY Chou, JW Lur, W Sun, SW
Citation: Cm. Chen et al., Shallow-trench isolation with raised-field-oxide structure, JPN J A P 1, 39(3A), 2000, pp. 1080-1084
An anomalous crossover in Vth roll-off for indium-doped nMOSFETs
Authors: Chang, SJ Chang, CY Chen, CM Chou, JW Chao, TS Huang, TY
Citation: Sj. Chang et al., An anomalous crossover in Vth roll-off for indium-doped nMOSFETs, IEEE ELEC D, 21(9), 2000, pp. 457-459
A novel shallow trench isolation with mini-spacer technology
Authors: Yeh, WK Lin, T Chen, CM Chou, JW Sun, SW
Citation: Wk. Yeh et al., A novel shallow trench isolation with mini-spacer technology, JPN J A P 1, 38(4B), 1999, pp. 2300-2305
Risultati: 1-12 |