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Results: 1-15 |
Results: 15
SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max)
Authors: Koester, SJ Hammond, R Chu, JO Mooney, PM Ott, JA Perraud, L Jenkins, KA Webster, CS Lagnado, I de la Houssaye, PR
Citation: Sj. Koester et al., SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f(max), IEEE ELEC D, 22(2), 2001, pp. 92-94
Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy
Authors: Koester, SJ Rim, K Chu, JO Mooney, PM Ott, JA Hargrove, MA
Citation: Sj. Koester et al., Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy, APPL PHYS L, 79(14), 2001, pp. 2148-2150
SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors
Authors: Huang, LJ Chu, JO Canaperi, DF D'Emic, CP Anderson, RM Koester, SJ Wong, HSP
Citation: Lj. Huang et al., SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors, APPL PHYS L, 78(9), 2001, pp. 1267-1269
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths
Authors: Lu, W Koester, SJ Wang, XW Chu, JO Ma, TP Adesida, I
Citation: W. Lu et al., Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths, J VAC SCI B, 18(6), 2000, pp. 3488-3492
Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD
Authors: Koester, SJ Hammond, R Chu, JO
Citation: Sj. Koester et al., Extremely high transconductance Ge/Si0.4Ge0.6 p-MODFET's grown by UHV-CVD, IEEE ELEC D, 21(3), 2000, pp. 110-112
SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition
Authors: Mooney, PM Chu, JO Ott, JA
Citation: Pm. Mooney et al., SiGe MOSFET structures on silicon-on-sapphire substrates grown by ultra-high vacuum chemical vapor deposition, J ELEC MAT, 29(7), 2000, pp. 921-927
SiGe technology: Heteroepitaxy and high-speed microelectronics
Authors: Mooney, PM Chu, JO
Citation: Pm. Mooney et Jo. Chu, SiGe technology: Heteroepitaxy and high-speed microelectronics, ANN R MATER, 30, 2000, pp. 335-362
High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's
Authors: Lu, W Kuliev, A Koester, SJ Wang, XW Chu, JO Ma, TP Adesida, I
Citation: W. Lu et al., High performance 0.1 mu m gate-length p-type SiGe MODFET's and MOS-MODFET's, IEEE DEVICE, 47(8), 2000, pp. 1645-1652
High-frequency noise performance of SiGe p-channel MODFETs
Authors: Koester, SJ Chu, JO Webster, CS
Citation: Sj. Koester et al., High-frequency noise performance of SiGe p-channel MODFETs, ELECTR LETT, 36(7), 2000, pp. 674-675
Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire
Authors: Mathew, SJ Niu, GF Dubbelday, WB Cressler, JD Ott, JA Chu, JO Mooney, PM Kavanagh, KL Meyerson, BS Lagnado, I
Citation: Sj. Mathew et al., Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire, IEEE ELEC D, 20(4), 1999, pp. 173-175
P-type SiGe transistors with low gate leakage using SiN gate dielectric
Authors: Lu, W Wang, XW Hammond, R Kuliev, A Koester, S Chu, JO Ismail, K Ma, TP Adesida, I
Citation: W. Lu et al., P-type SiGe transistors with low gate leakage using SiN gate dielectric, IEEE ELEC D, 20(10), 1999, pp. 514-516
Quantum indistinguishability effects of confined polyexcitons
Authors: Shum, K Mooney, PM Chu, JO
Citation: K. Shum et al., Quantum indistinguishability effects of confined polyexcitons, PHYS REV B, 60(8), 1999, pp. 5786-5790
Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy
Authors: Kovats, Z Salditt, T Metzger, TH Peisl, J Stimpel, T Lorenz, H Chu, JO Ismail, K
Citation: Z. Kovats et al., Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy, J PHYS D, 32(4), 1999, pp. 359-368
High-performance 0.1 mu m gate-length Ge/Si0.4Ge0.6 p-channel MODFETs
Authors: Hammond, R Koester, SJ Chu, JO
Citation: R. Hammond et al., High-performance 0.1 mu m gate-length Ge/Si0.4Ge0.6 p-channel MODFETs, ELECTR LETT, 35(18), 1999, pp. 1590-1591
High-f(T) n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD
Authors: Koester, SJ Chu, JO Groves, RA
Citation: Sj. Koester et al., High-f(T) n-MODFETs fabricated on Si/SiGe heterostructures grown by UHV-CVD, ELECTR LETT, 35(1), 1999, pp. 86-87
Risultati: 1-15 |