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Results: 1-25 | 26-50 | 51-54
Results: 1-25/54
Wet chemical etching of LiGaO2 and LiAlO2
Authors: Hsu, CH Ip, KP Johnson, JW Chu, SNG Kryliouk, O Pearton, SJ Li, L Chai, BHT Anderson, TJ Ren, F
Citation: Ch. Hsu et al., Wet chemical etching of LiGaO2 and LiAlO2, EL SOLID ST, 4(6), 2001, pp. C35-C38
Device series resistance calculations for vertical cavity surface-emittinglasers
Authors: Dang, G Luo, B Ren, F Hobson, WS Lopata, J Chu, SNG Pearton, SJ
Citation: G. Dang et al., Device series resistance calculations for vertical cavity surface-emittinglasers, EL SOLID ST, 4(12), 2001, pp. G112-G114
Magnetic properties of Fe- and Mn-implanted SiC
Authors: Theodoropoulou, N Hebard, AF Chu, SNG Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM
Citation: N. Theodoropoulou et al., Magnetic properties of Fe- and Mn-implanted SiC, EL SOLID ST, 4(12), 2001, pp. G119-G121
High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers
Authors: Dang, G Hobson, WS Chirovsky, LMF Lopata, J Tayahi, M Chu, SNG Ren, F Pearton, SJ
Citation: G. Dang et al., High-speed modulation of 850-nm intracavity contacted shallow implant-apertured vertical-cavity surface-emitting lasers, IEEE PHOTON, 13(9), 2001, pp. 924-926
Novel quantum cascade devices for long wavelength IR emission
Authors: Tredicucci, A Gmachl, C Capasso, F Wanke, MC Hutchinson, AL Sivco, DL Chu, SNG Cho, AY
Citation: A. Tredicucci et al., Novel quantum cascade devices for long wavelength IR emission, OPT MATER, 17(1-2), 2001, pp. 211-217
Epitaxial growth and self-organized superlattice structures in AlGaN filmsgrown by plasma assisted molecular beam epitaxy
Authors: Iliopoulos, E Ludwig, KF Moustakas, TD Komninou, P Karakostas, T Nouet, G Chu, SNG
Citation: E. Iliopoulos et al., Epitaxial growth and self-organized superlattice structures in AlGaN filmsgrown by plasma assisted molecular beam epitaxy, MAT SCI E B, 87(3), 2001, pp. 227-236
GaN electronics for high power, high temperature applications
Authors: Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation: Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
High density plasma via hole etching in SiC
Authors: Cho, H Lee, KP Leerungnawarat, P Chu, SNG Ren, F Pearton, SJ Zetterling, CM
Citation: H. Cho et al., High density plasma via hole etching in SiC, J VAC SCI A, 19(4), 2001, pp. 1878-1881
In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells
Authors: Ng, HM Chu, SNG Cho, AY
Citation: Hm. Ng et al., In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells, J VAC SCI A, 19(1), 2001, pp. 292-294
Magnetic properties of Mn and Fe-implanted p-GaN
Authors: Theodoropoulou, N Overberg, ME Chu, SNG Hebard, AF Abernathy, CR Wilson, RG Zavada, JM Lee, KP Pearton, SJ
Citation: N. Theodoropoulou et al., Magnetic properties of Mn and Fe-implanted p-GaN, PHYS ST S-B, 228(1), 2001, pp. 337-340
The effect of built-in electric field in GaN/AlGaN quantum wells with highAlN mole fraction
Authors: Ng, HM Harel, R Chu, SNG Cho, AY
Citation: Hm. Ng et al., The effect of built-in electric field in GaN/AlGaN quantum wells with highAlN mole fraction, J ELEC MAT, 30(3), 2001, pp. 134-137
Comparison of F-2 plasma chemistries for deep etching of SiC
Authors: Leerungnawarat, P Lee, KP Pearton, SJ Ren, F Chu, SNG
Citation: P. Leerungnawarat et al., Comparison of F-2 plasma chemistries for deep etching of SiC, J ELEC MAT, 30(3), 2001, pp. 202-206
Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs
Authors: Hobson, WS Lopata, J Chirovsky, LMF Chu, SNG Dang, G Lou, B Ren, F Tayahi, M Kilper, DC Pearton, SJ
Citation: Ws. Hobson et al., Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs, SOL ST ELEC, 45(9), 2001, pp. 1639-1644
Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs
Authors: Lee, KP Zhang, AP Dang, G Ren, F Han, J Chu, SNG Hobson, WS Lopata, J Abernathy, CR Pearton, SJ Lee, JW
Citation: Kp. Lee et al., Self-aligned process for emitter- and base-regrowth GaNHBTs and BJTs, SOL ST ELEC, 45(2), 2001, pp. 243-247
Quantum devices, MBE technology for the 21st century
Authors: Cho, AY Sivco, DL Ng, HM Gmachl, C Tredicucci, A Hutchinson, AL Chu, SNG Capasso, F
Citation: Ay. Cho et al., Quantum devices, MBE technology for the 21st century, J CRYST GR, 227, 2001, pp. 1-7
Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si
Authors: Kwo, J Hong, M Kortan, AR Queeney, KL Chabal, YJ Opila, RL Muller, DA Chu, SNG Sapjeta, BJ Lay, TS Mannaerts, JP Boone, T Krautter, HW Krajewski, JJ Sergnt, AM Rosamilia, JM
Citation: J. Kwo et al., Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si, J APPL PHYS, 89(7), 2001, pp. 3920-3927
Assessment and modeling of aging in electro-absorption distributed Bragg reflector lasers
Authors: Ackerman, DA Johnson, JE Chu, SNG Zhang, LM Dean, EJ Ketelsen, LJP
Citation: Da. Ackerman et al., Assessment and modeling of aging in electro-absorption distributed Bragg reflector lasers, IEEE J Q EL, 37(11), 2001, pp. 1382-1387
Sub-picosecond electron scattering time for lambda similar or equal to 1.55 mu m intersubband transitions in GaN/AlGaN multiple quantum wells
Authors: Gmachl, C Frolov, SV Ng, HM Chu, SNG Cho, AY
Citation: C. Gmachl et al., Sub-picosecond electron scattering time for lambda similar or equal to 1.55 mu m intersubband transitions in GaN/AlGaN multiple quantum wells, ELECTR LETT, 37(6), 2001, pp. 378-380
Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers
Authors: Dang, G Cho, H Ip, KP Pearton, SJ Chu, SNG Lopata, J Hobson, WS Chirovsky, LMF Ren, F
Citation: G. Dang et al., Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers, J ELCHEM SO, 148(2), 2001, pp. G25-G28
p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers
Authors: Luo, B Dang, G Zhang, AP Ren, F Lopata, J Chu, SNG Hobson, WS Pearton, SJ
Citation: B. Luo et al., p-ohmic contact study for intracavity contacts in AlGaAs/GaAs vertical cavity surface-emitting lasers, J ELCHEM SO, 148(12), 2001, pp. G676-G679
Characterization of high dose Fe implantation into p-GaN
Authors: Theodoropoulou, N Hebard, AF Chu, SNG Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM
Citation: N. Theodoropoulou et al., Characterization of high dose Fe implantation into p-GaN, APPL PHYS L, 79(21), 2001, pp. 3452-3454
Generic degradation mechanism for 980 nm InxGa1-xAs/GaAs strained quantum-well lasers (vol 78, pg 3166, 2001)
Authors: Chu, SNG Chand, N Joyce, WB Parayanthal, P Wilt, DP
Citation: Sng. Chu et al., Generic degradation mechanism for 980 nm InxGa1-xAs/GaAs strained quantum-well lasers (vol 78, pg 3166, 2001), APPL PHYS L, 79(13), 2001, pp. 2115-2115
Chemical ordering in AlGaN alloys grown by molecular beam epitaxy
Authors: Iliopoulos, E Ludwig, KF Moustakas, TD Chu, SNG
Citation: E. Iliopoulos et al., Chemical ordering in AlGaN alloys grown by molecular beam epitaxy, APPL PHYS L, 78(4), 2001, pp. 463-465
Injectorless quantum-cascade lasers
Authors: Wanke, MC Capasso, F Gmachl, C Tredicucci, A Sivco, DL Hutchinson, AL Chu, SNG Cho, AY
Citation: Mc. Wanke et al., Injectorless quantum-cascade lasers, APPL PHYS L, 78(25), 2001, pp. 3950-3952
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
Authors: Hsu, JWP Manfra, MJ Chu, SNG Chen, CH Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy, APPL PHYS L, 78(25), 2001, pp. 3980-3982
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