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Results:
1-14
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Results: 14
Authors:
Gagaoudakis, E
Bender, M
Douloufakis, E
Katsarakis, N
Natsakou, E
Cimalla, V
Kiriakidis, G
Citation: E. Gagaoudakis et al., The influence of deposition parameters on room temperature ozone sensing properties of InOx films, SENS ACTU-B, 80(2), 2001, pp. 155-161
Authors:
Kiriakidis, G
Bender, M
Katsarakis, N
Gagaoudakis, E
Hourdakis, E
Douloufakis, E
Cimalla, V
Citation: G. Kiriakidis et al., Ozone sensing properties of polycrystalline indium oxide films at room temperature, PHYS ST S-A, 185(1), 2001, pp. 27-32
Authors:
Pezoldt, J
Schroter, B
Cimalla, V
Masri, P
Citation: J. Pezoldt et al., The influence of surface preparation on the properties of SiC on Si(111), PHYS ST S-A, 185(1), 2001, pp. 159-166
Authors:
Bender, M
Katsarakis, N
Gagaoudakis, E
Hourdakis, E
Douloufakis, E
Cimalla, V
Kiriakidis, G
Citation: M. Bender et al., Dependence of the photoreduction and oxidation behavior of indium oxide films on substrate temperature and film thickness, J APPL PHYS, 90(10), 2001, pp. 5382-5387
Authors:
Wohner, T
Cimalla, V
Stauden, T
Schaefer, JA
Pezoldt, J
Citation: T. Wohner et al., Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces, THIN SOL FI, 364(1-2), 2000, pp. 28-32
Authors:
Romanus, H
Cimalla, V
Schaefer, JA
Spiess, L
Ecke, G
Pezoldt, J
Citation: H. Romanus et al., Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers, THIN SOL FI, 359(2), 2000, pp. 146-149
Authors:
Kayambaki, M
Tsagaraki, K
Cimalla, V
Zekentes, K
Yakimova, R
Citation: M. Kayambaki et al., Crystal quality evaluation by electrochemical preferential etching of p-type SiC crystals, J ELCHEM SO, 147(7), 2000, pp. 2744-2748
Authors:
Cimalla, V
Zekentes, K
Citation: V. Cimalla et K. Zekentes, Temperature dependence of the transition from two-dimensional to three-dimensional growth of Ge on (001)Si studied by reflection high-energy electrondiffraction, APPL PHYS L, 77(10), 2000, pp. 1452-1454
Authors:
As, DJ
Frey, T
Schikora, D
Lischka, K
Cimalla, V
Pezoldt, J
Goldhahn, R
Kaiser, S
Gebhardt, W
Citation: Dj. As et al., Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates, APPL PHYS L, 76(13), 2000, pp. 1686-1688
Authors:
Scheiner, J
Goldhahn, R
Cimalla, V
Ecke, G
Attenberger, W
Lindner, JKM
Gobsch, G
Pezoldt, J
Citation: J. Scheiner et al., Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon, MAT SCI E B, 61-2, 1999, pp. 526-530
Authors:
Attenberger, W
Lindner, J
Cimalla, V
Pezoldt, J
Citation: W. Attenberger et al., Structural and morphological investigations of the initial stages in solidsource molecular beam epitaxy of SiC on (111)Si, MAT SCI E B, 61-2, 1999, pp. 544-548
Authors:
Cimalla, V
Stauden, T
Eichhorn, G
Pezoldt, J
Citation: V. Cimalla et al., Influence of the heating ramp on the heteroepitaxial growth of SiC on Si, MAT SCI E B, 61-2, 1999, pp. 553-558
Authors:
Rossow, U
Aspnes, DE
Ambacher, O
Cimalla, V
Edwards, NV
Bremser, M
Davis, RF
Schaefer, JA
Stutzmann, M
Citation: U. Rossow et al., Reflectance difference spectroscopy characterization of AlxGa1-xN-compoundlayers, PHYS ST S-B, 216(1), 1999, pp. 215-220
Authors:
Cimalla, V
Stauden, T
Ecke, G
Scharmann, F
Eichhorn, G
Pezoldt, J
Sloboshanin, S
Schaefer, JA
Citation: V. Cimalla et al., Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy, APPL PHYS L, 73(24), 1998, pp. 3542-3544
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1-14
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