Authors:
Vasanelli, A
De Giorgi, M
Ferreira, R
Cingolani, R
Sakaki, H
Bastard, G
Citation: A. Vasanelli et al., Electronic structure, Stark effect and optical properties of multistacked dots, JPN J A P 1, 40(3B), 2001, pp. 1955-1957
Authors:
Visconti, P
Reshchikov, MA
Jones, KM
Wang, DF
Cingolani, R
Morkoc, H
Molnar, RJ
Smith, DJ
Citation: P. Visconti et al., Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication, J VAC SCI B, 19(4), 2001, pp. 1328-1333
Authors:
Piscopiello, E
Catalano, M
Antisari, MV
Passaseo, A
Branca, E
Cingolani, R
Berti, M
Citation: E. Piscopiello et al., Influence of the N-2/H-2 ratio on the structural features of InxGa1-xN/GaNfilms grown by MOCVD, MAT SCI E B, 87(3), 2001, pp. 237-243
Authors:
Taurino, A
Catalano, M
De Giorgi, M
Passaseo, A
Cingolani, R
Citation: A. Taurino et al., Effects of coupling on the structural properties of InxGa1-xAs/GaAs 1-D and 0-D sell-organized quantum structures, MAT SCI E B, 87(3), 2001, pp. 256-261
Authors:
Barbarella, G
Favaretto, L
Sotgiu, G
Antolini, L
Gigli, G
Cingolani, R
Bongini, A
Citation: G. Barbarella et al., Rigid-core oligothiophene-S,S-dioxides with high photoluminescence efficiencies both in solution and in the solid state, CHEM MATER, 13(11), 2001, pp. 4112-4122
Authors:
De Giorgi, M
Taurino, A
Passaseo, A
Catalano, M
Cingolani, R
Citation: M. De Giorgi et al., Interpretation of phase and strain contrast of TEM images of InxGa1-xAs/GaAs quantum dots - art. no. 245302, PHYS REV B, 6324(24), 2001, pp. 5302
Authors:
Di Carlo, A
Reale, A
Lugli, P
Traetta, G
Lomascolo, M
Passaseo, A
Cingolani, R
Bonfiglio, A
Berti, M
Napolitani, E
Natali, M
Sinha, SK
Drigo, AV
Vinattieri, A
Colocci, M
Citation: A. Di Carlo et al., Mesoscopic-capacitor effect in GaN/AlxGa1-xN quantum wells: Effects on theelectronic states - art. no. 235305, PHYS REV B, 6323(23), 2001, pp. 5305
Authors:
Rinaldi, R
Cingolani, R
Jones, KM
Baski, AA
Morkoc, H
Di Carlo, A
Widany, J
Della Sala, E
Lugli, P
Citation: R. Rinaldi et al., Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction - art. no. 075311, PHYS REV B, 6307(7), 2001, pp. 5311
Authors:
Tedesco, E
Kariuki, BM
Harris, KDM
Johnston, RL
Pudova, O
Barbarella, G
Marseglia, EA
Gigli, G
Cingolani, R
Citation: E. Tedesco et al., Structural aspects of high-efficiency blue-emitting 2,5-bis(trimethylsilyl)thiophene-S,S-dioxide and related materials, J SOL ST CH, 161(1), 2001, pp. 121-128
Authors:
Traetta, G
Di Carlo, A
Reale, A
Lugli, P
Lomascolo, M
Passaseo, A
Cingolani, R
Bonfiglio, A
Berti, M
Napolitani, E
Natali, M
Sinha, SK
Drigo, AV
Citation: G. Traetta et al., Charge storage and screening of the internal field in GaN/AlGaN quantum wells, J CRYST GR, 230(3-4), 2001, pp. 492-496
Authors:
Passaseo, A
Rinaldi, R
Longo, M
Antonaci, S
Convertino, AL
Cingolani, R
Taurino, A
Catalano, M
Citation: A. Passaseo et al., Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 mu m, J APPL PHYS, 89(8), 2001, pp. 4341-4348
Authors:
Anni, M
Gigli, G
Cingolani, R
Patane, S
Arena, A
Allegrini, M
Citation: M. Anni et al., Organic mu cavities based on thermally evaporated TeOx-LiF distributed Bragg reflectors, APPL PHYS L, 79(9), 2001, pp. 1381-1383
Authors:
Thompson, J
Blyth, RIR
Mazzeo, M
Anni, M
Gigli, G
Cingolani, R
Citation: J. Thompson et al., White light emission from blends of blue-emitting organic molecules: A general route to the white organic light-emitting diode?, APPL PHYS L, 79(5), 2001, pp. 560-562
Authors:
De Giorgi, M
Lingk, C
von Plessen, G
Feldmann, J
De Rinaldis, S
Passaseo, A
De Vittorio, M
Cingolani, R
Lomascolo, M
Citation: M. De Giorgi et al., Capture and thermal re-emission of carriers in long-wavelength InGaAs/GaAsquantum dots, APPL PHYS L, 79(24), 2001, pp. 3968-3970
Authors:
Crozier, PA
Catalano, M
Cingolani, R
Passaseo, A
Citation: Pa. Crozier et al., Direct quantitative measurement of compositional enrichment and variationsin InyGa1-yAs quantum dots, APPL PHYS L, 79(19), 2001, pp. 3170-3172