AAAAAA
Results: 1-25/31
Authors:
Fortunato, G
Mariucci, L
Stanizzi, M
Privitera, V
Spinella, C
Coffa, S
Napolitani, E
Citation: G. Fortunato et al., Fabrication of ultra-shallow junctions with high electrical activation by excimer laser annealing, MAT SC S PR, 4(5), 2001, pp. 417-423
Authors:
Wang, S
Coffa, S
Carius, R
Buchal, C
Citation: S. Wang et al., Efficient electroluminescence from rare earth doped MOS diodes, MAT SCI E B, 81(1-3), 2001, pp. 102-104
Authors:
Libertino, S
Coffa, S
Spinella, C
La Magna, A
Privitera, V
Citation: S. Libertino et al., Point defect diffusion and clustering in ion implanted c-Si, NUCL INST B, 178, 2001, pp. 25-32
Authors:
La Magna, A
Coffa, S
Libertino, S
Brambilla, L
Alippi, P
Colombo, L
Citation: A. La Magna et al., A multi-scale atomistic study of the interstitials agglomeration in crystalline Si, NUCL INST B, 178, 2001, pp. 154-159
Authors:
Libertino, S
Coffa, S
Benton, JL
Citation: S. Libertino et al., Formation, evolution, and annihilation of interstitial clusters in ion-implanted Si - art. no. 195206, PHYS REV B, 6319(19), 2001, pp. 5206
Authors:
Giri, PK
Coffa, S
Raineri, V
Privitera, V
Galvagno, G
La Ferla, A
Rimini, E
Citation: Pk. Giri et al., Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon, J APPL PHYS, 89(8), 2001, pp. 4310-4317
Authors:
Giri, PK
Coffa, S
Rimini, E
Citation: Pk. Giri et al., Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon, APPL PHYS L, 78(3), 2001, pp. 291-293
Authors:
Libertino, S
Coffa, S
Saggio, M
Citation: S. Libertino et al., Design and fabrication of integrated Si-based optoelectronic devices, MAT SC S PR, 3(5-6), 2000, pp. 375-381
Authors:
Raineri, V
Coffa, S
Szilagyi, E
Gyulai, J
Rimini, E
Citation: V. Raineri et al., He-vacancy interactions in Si and their influence on bubble formation and evolution, PHYS REV B, 61(2), 2000, pp. 937-945
Authors:
La Magna, A
Coffa, S
Citation: A. La Magna et S. Coffa, Accelerated Monte Carlo algorithms for defect diffusion and clustering, COMP MAT SC, 17(1), 2000, pp. 21-33
Authors:
Libertino, S
Coffa, S
Spinella, C
Benton, JL
Arcifa, D
Citation: S. Libertino et al., Cluster formation and growth in Si ion implanted c-Si, MAT SCI E B, 71, 2000, pp. 137-142
Authors:
Giri, PK
Galvagno, G
La Ferla, A
Rimini, E
Coffa, S
Raineri, V
Citation: Pk. Giri et al., Formation and annealing of defects during high-temperature processing of ion-implanted epitaxial silicon: the role of dopant implants, MAT SCI E B, 71, 2000, pp. 186-191
Authors:
Lombardo, S
Coffa, S
Bongiorno, C
Spinella, C
Castagna, E
Sciuto, A
Gerardi, C
Ferrari, F
Fazio, B
Privitera, S
Citation: S. Lombardo et al., Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2, MAT SCI E B, 69, 2000, pp. 295-298
Authors:
Coffa, S
Libertino, S
Coppola, G
Cutolo, A
Citation: S. Coffa et al., Feasibility analysis of laser action in erbium-doped silicon waveguides, IEEE J Q EL, 36(10), 2000, pp. 1206-1213
Authors:
Coffa, S
Libertino, S
Spinella, C
Citation: S. Coffa et al., Transition from small interstitial clusters to extended {311} defects in ion-implanted Si, APPL PHYS L, 76(3), 2000, pp. 321-323
Authors:
Spinella, C
Coffa, S
Bongiorno, C
Pannitteri, S
Grimaldi, MG
Citation: C. Spinella et al., Origin and perspectives of the 1.54 mu m luminescence from ion-beam-synthesized beta-FeSi2 precipitates in Si, APPL PHYS L, 76(2), 2000, pp. 173-175
Authors:
Libertino, S
Coffa, S
Benton, JL
Halliburton, K
Eaglesham, DJ
Citation: S. Libertino et al., Formation, evolution and annihilation of interstitial clusters in ion implanted Si, NUCL INST B, 148(1-4), 1999, pp. 247-251
Authors:
La Magna, A
Coffa, S
Colombo, L
Citation: A. La Magna et al., A lattice kinetic Monte Carlo code for the description of vacancy diffusion and self-organization in Si, NUCL INST B, 148(1-4), 1999, pp. 262-267
Authors:
Suyver, JF
Kik, PG
Kimura, T
Polman, A
Franzo, G
Coffa, S
Citation: Jf. Suyver et al., Optical and electrical doping of silicon with holmium, NUCL INST B, 148(1-4), 1999, pp. 497-501
Authors:
Libertino, S
Coffa, S
Citation: S. Libertino et S. Coffa, Migration and interaction properties of ion beam generated point defects in c-Si, NUCL INST B, 147(1-4), 1999, pp. 23-28
Authors:
Raineri, V
Coffa, S
Saggio, M
Frisina, F
Rimini, E
Citation: V. Raineri et al., Radiation damage He interaction in He implanted Si during bubble formationand their evolution in voids, NUCL INST B, 147(1-4), 1999, pp. 292-297
Authors:
Carey, JD
Barklie, RC
Donegan, JF
Priolo, F
Franzo, G
Coffa, S
Citation: Jd. Carey et al., Electron paramagnetic resonance and photoluminescence study of Er-impuritycomplexes in Si, PHYS REV B, 59(4), 1999, pp. 2773-2782
Authors:
La Magna, A
Coffa, S
Colombo, L
Citation: A. La Magna et al., Role of extended vacancy-vacancy interaction on the ripening of voids in silicon, PHYS REV L, 82(8), 1999, pp. 1720-1723
Authors:
Libertino, S
Coffa, S
Mosca, R
Gombia, E
Citation: S. Libertino et al., The electrical properties of terbium ions in crystalline Si, J APPL PHYS, 85(4), 1999, pp. 2093-2099
Authors:
Libertino, S
Benton, JL
Coffa, S
Eaglesham, DJ
Citation: S. Libertino et al., Impurity and clustering effects on defect evolution in ion-implanted Si, NUOV CIM D, 20(10), 1998, pp. 1529-1548