Authors: van Meer, H Henson, K Lyu, JH Rosmeulen, M Kubicek, S Collaert, N De Meyer, K

Citation: H. Van Meer et al., Limitations of shift-and-ratio based L-eff extraction techniques for MOS transistors with halo or pocket implants, IEEE ELEC D, 21(3), 2000, pp. 133-136

Authors: Collaert, N Verheyen, P De Meyer, K

Citation: N. Collaert et al., On the reverse short channel effect in deep submicron heterojunction MOSFET's and its impact on the current-voltage behavior, IEEE DEVICE, 47(6), 2000, pp. 1214-1220

Authors: Collaert, N De Meyer, K

Citation: N. Collaert et K. De Meyer, Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs, SOL ST ELEC, 43(12), 1999, pp. 2173-2180

Authors: Pokatilov, EP Fomin, VM Balaban, SN Gladilin, VN Klimin, SN Devreese, JT Magnus, W Schoenmaker, W Collaert, N Van Rossum, M De Meyer, K

Citation: Ep. Pokatilov et al., Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal-oxide-semiconductor structures, J APPL PHYS, 85(9), 1999, pp. 6625-6631

Authors: Collaert, N De Meyer, K

Citation: N. Collaert et K. De Meyer, Modeling the short-channel threshold voltage of a novel vertical heterojunction pMOSFET, IEEE DEVICE, 46(5), 1999, pp. 933-939

Authors: De Meyer, K Caymax, M Collaert, N Loo, R Verheyen, P

Citation: K. De Meyer et al., The vertical heterojunction MOSFET, THIN SOL FI, 336(1-2), 1998, pp. 299-305