Authors:
Czerwinski, A
Katcki, J
Poyai, A
Simoen, E
Claeys, C
Ratajczak, J
Gaubas, E
Citation: A. Czerwinski et al., Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities, MAT SC S PR, 4(1-3), 2001, pp. 105-107
Authors:
Frydrychewicz, A
Czerwinski, A
Jackowska, K
Citation: A. Frydrychewicz et al., Electrochemistry of multilayer electrodes RVC backslash Pani backslash Pd backslash Pani, SYNTH METAL, 121(1-3), 2001, pp. 1401-1402
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Gaubas, E
Citation: A. Poyai et al., Improved extraction of the activation energy of the leakage current in silicon p-n junction diodes, APPL PHYS L, 78(14), 2001, pp. 1997-1999
Citation: A. Czerwinski et al., The study of hydrogen sorption in palladium limited volume electrodes (Pd-LVE) - Part II. Basic solutions, J ELEC CHEM, 492(2), 2000, pp. 128-136
Authors:
Kulesza, PJ
Malik, MA
Schmidt, R
Smolinska, A
Miecznikowski, K
Zamponi, S
Czerwinski, A
Berrettoni, M
Marassi, R
Citation: Pj. Kulesza et al., Electrochemical preparation and characterization of electrodes modified with mixed hexacyanoferrates of nickel and palladium, J ELEC CHEM, 487(1), 2000, pp. 57-65
Citation: M. Grden et al., The study of electrochemical palladium behavior using the quartz crystal microbalance - II. Basic solutions, J SOL ST EL, 4(5), 2000, pp. 273-278
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Citation: A. Poyai et al., Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes, MAT SCI E B, 73(1-3), 2000, pp. 191-196
Authors:
Czerwinski, A
Kiersztyn, I
Grden, M
Czapla, J
Citation: A. Czerwinski et al., The study of hydrogen sorption in palladium limited volume electrodes (Pd-LVE) I. Acidic solutions, J ELEC CHEM, 471(2), 1999, pp. 190-195
Citation: M. Grden et al., Study of electrochemical palladium behavior by the quartz crystal microbalance. I. Acidic solutions, J SOL ST EL, 3(6), 1999, pp. 348-351
Authors:
Claeys, C
Simoen, E
Poyai, A
Czerwinski, A
Citation: C. Claeys et al., Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics, J ELCHEM SO, 146(9), 1999, pp. 3429-3434
Authors:
Claeys, C
Poyai, A
Simoen, E
Czerwinski, A
Katcki, J
Citation: C. Claeys et al., p-n junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates, J ELCHEM SO, 146(3), 1999, pp. 1151-1157