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Results: 1-16 |
Results: 16
SURFACE PHONON OBSERVED IN GAAS WIRE CRYSTALS GROWN ON POROUS SI
Authors: DASILVA SW GALZERANI JC LUBYSHEV DI BASMAJI P
Citation: Sw. Dasilva et al., SURFACE PHONON OBSERVED IN GAAS WIRE CRYSTALS GROWN ON POROUS SI, Journal of physics. Condensed matter (Print), 10(43), 1998, pp. 9687-9690
FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES
Authors: PUSEP YA SILVA MTO GALZERANI JC DASILVA SW SCOLFARO LMR ENDERLEIN R QUIVY AA LIMA AP LEITE JR
Citation: Ya. Pusep et al., FANO-LIKE ELECTRON-PHONON INTERFERENCE IN DELTA-DOPING GAAS SUPERLATTICES, Superlattices and microstructures, 23(5), 1998, pp. 1033-1035
RAMAN-STUDY OF INTERFACE MODES SUBJECTED TO STRAIN IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/
Authors: PUSEP YA ZANELATTO G DASILVA SW GALZERANI JC GONZALEZBORRERO PP TOROPOV AI BASMAJI P
Citation: Ya. Pusep et al., RAMAN-STUDY OF INTERFACE MODES SUBJECTED TO STRAIN IN INAS GAAS SELF-ASSEMBLED QUANTUM DOTS/, Physical review. B, Condensed matter, 58(4), 1998, pp. 1770-1773
PHOTOLUMINESCENCE STUDY OF SPIN-ORBIT-SPLIT BOUND ELECTRON-STATES IN SELF-ASSEMBLED INAS AND IN0.5GA0.5AS QUANTUM DOTS
Authors: DASILVA SW PUSEP YA GALZERANI JC LUBYSHEV DI GONZALEZBORRERO PP BASMAJI P
Citation: Sw. Dasilva et al., PHOTOLUMINESCENCE STUDY OF SPIN-ORBIT-SPLIT BOUND ELECTRON-STATES IN SELF-ASSEMBLED INAS AND IN0.5GA0.5AS QUANTUM DOTS, Journal of physics. Condensed matter, 9(1), 1997, pp. 13-17
PHOTOLUMINESCENCE OF EXCITONS IN DIFFERENTLY ORIENTED SELF-ASSEMBLED INAS QUANTUM DOTS
Authors: PUSEP YA DASILVA SW GALZERANI JC LUBYSHEV DI GONZALEZBORRERO PP MAREGA E PETITPREZ E LASCALA N BASMAJI P
Citation: Ya. Pusep et al., PHOTOLUMINESCENCE OF EXCITONS IN DIFFERENTLY ORIENTED SELF-ASSEMBLED INAS QUANTUM DOTS, Physica status solidi. a, Applied research, 164(1), 1997, pp. 455-457
CHARACTERIZATION OF GAAS WIRE CRYSTALS GROWN ON POROUS SILICON BY RAMAN-SCATTERING
Authors: DASILVA SW LUBYSHEV DI BASMAJI P PUSEP YA PIZANI PS GALZERANI JC KATIYAR RS MORELL G
Citation: Sw. Dasilva et al., CHARACTERIZATION OF GAAS WIRE CRYSTALS GROWN ON POROUS SILICON BY RAMAN-SCATTERING, Journal of applied physics, 82(12), 1997, pp. 6247-6250
RAMAN-STUDY OF FANO-LIKE ELECTRON-PHONON COUPLING IN DELTA-DOPING GAAS SUPERLATTICES
Authors: PUSEP YA SILVA MTO GALZERANI JC DASILVA SW SCOLFARO LMR ENDERLEIN R QUIVY AA LIMA AP LEITE JR
Citation: Ya. Pusep et al., RAMAN-STUDY OF FANO-LIKE ELECTRON-PHONON COUPLING IN DELTA-DOPING GAAS SUPERLATTICES, Physical review. B, Condensed matter, 54(19), 1996, pp. 13927-13931
RAMAN-STUDY OF INTERFACE ROUGHNESS IN (GAAS)(N)(ALAS)(N) SUPERLATTICES GROWN ON TILTED SURFACES - EVIDENCE OF CORRUGATION OF THE (113) INTERFACE
Authors: DASILVA SW PUSEP YA GALZERANI JC PIMENTA MA LUBYSHEV DI BORRERO PPG BASMAJI P
Citation: Sw. Dasilva et al., RAMAN-STUDY OF INTERFACE ROUGHNESS IN (GAAS)(N)(ALAS)(N) SUPERLATTICES GROWN ON TILTED SURFACES - EVIDENCE OF CORRUGATION OF THE (113) INTERFACE, Physical review. B, Condensed matter, 53(4), 1996, pp. 1927-1932
OPTICAL PHONON-SPECTRA OF GASB ALSB SUPERLATTICES - INFLUENCE OF STRAIN AND INTERLACE ROUGHNESSES/
Authors: DASILVA SW PUSEP YA GALZERANI JC LUBYSHEV DI MILEKHIN AG PREOBRAZHENSKII VV PUTIATO MA SEMJAGIN BR
Citation: Sw. Dasilva et al., OPTICAL PHONON-SPECTRA OF GASB ALSB SUPERLATTICES - INFLUENCE OF STRAIN AND INTERLACE ROUGHNESSES/, Journal of applied physics, 80(1), 1996, pp. 597-599
COMPARATIVE RAMAN STUDIES OF CUBIC AND HEXAGONAL GAN EPITAXIAL LAYERS
Authors: TABATA A ENDERLEIN R LEITE JR DASILVA SW GALZERANI JC SCHIKORA D KLOIDT M LISCHKA K
Citation: A. Tabata et al., COMPARATIVE RAMAN STUDIES OF CUBIC AND HEXAGONAL GAN EPITAXIAL LAYERS, Journal of applied physics, 79(8), 1996, pp. 4137-4140
ATOMIC-SCALE CHARACTERIZATION OF INTERFACES IN THE GAAS ALGAAS SUPERLATTICES/
Authors: PUSEP YA DASILVA SW GALZERANI JC LUBYSHEV DI BASMAJI P MILEKHIN AG PREOBRAZHENSKII VV SEMYAGIN BR MARAHOVKA II
Citation: Ya. Pusep et al., ATOMIC-SCALE CHARACTERIZATION OF INTERFACES IN THE GAAS ALGAAS SUPERLATTICES/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 180-183
SPECTROSCOPY OF THE OPTICAL VIBRATIONAL-MODES IN GAAS ALXGA1-XAS HETEROSTRUCTURES WITH MONOLAYER-WIDE ALXGA1-XAS BARRIERS/
Authors: PUSEP YA DASILVA SW GALZERANI JC MILEKHIN AG PREOBRAZHENSKII VV SEMYAGIN BR MARAHOVKA II
Citation: Ya. Pusep et al., SPECTROSCOPY OF THE OPTICAL VIBRATIONAL-MODES IN GAAS ALXGA1-XAS HETEROSTRUCTURES WITH MONOLAYER-WIDE ALXGA1-XAS BARRIERS/, Physical review. B, Condensed matter, 52(4), 1995, pp. 2610-2618
RAMAN-SCATTERING OF THE OPTICAL VIBRATIONAL-MODES IN (GAAS)(N)(ALAS)(N) SUPERLATTICES GROWN ON (311)A AND (311)B SURFACES
Authors: PUSEP YA DASILVA SW GALZERANI JC LUBYSHEV DI PREOBRAZHENSKII V BASMAJI P
Citation: Ya. Pusep et al., RAMAN-SCATTERING OF THE OPTICAL VIBRATIONAL-MODES IN (GAAS)(N)(ALAS)(N) SUPERLATTICES GROWN ON (311)A AND (311)B SURFACES, Physical review. B, Condensed matter, 51(8), 1995, pp. 5473-5476
INFLUENCE OF ATOMIC-SCALE ROUGHNESS ON RAMAN SELECTION-RULES IN THE ULTRATHIN-LAYER (GAAS)(N1)(ALAS)(N2) SUPERLATTICES
Authors: PUSEP YA DASILVA SW GALZERANI JC LUBYSHEV DI BASMAJI P
Citation: Ya. Pusep et al., INFLUENCE OF ATOMIC-SCALE ROUGHNESS ON RAMAN SELECTION-RULES IN THE ULTRATHIN-LAYER (GAAS)(N1)(ALAS)(N2) SUPERLATTICES, Physical review. B, Condensed matter, 51(15), 1995, pp. 9891-9894
STRAIN RELATED SHALLOW LEVELS IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS QUANTUM-WELL STRUCTURES/
Authors: GUIMARAES FEG LUBYSHEV D DASILVA SW CHITTA VA GALZERANI JC BASMAJI P
Citation: Feg. Guimaraes et al., STRAIN RELATED SHALLOW LEVELS IN (100)-ORIENTED AND (311)-ORIENTED INGAAS GAAS QUANTUM-WELL STRUCTURES/, Solid state communications, 93(5), 1995, pp. 466-466
CRYSTALLIZATION PROCESS OF AMORPHOUS GASB FILMS STUDIED BY RAMAN-SPECTROSCOPY
Authors: DASILVA JHD DASILVA SW GALZERANI JC
Citation: Jhd. Dasilva et al., CRYSTALLIZATION PROCESS OF AMORPHOUS GASB FILMS STUDIED BY RAMAN-SPECTROSCOPY, Journal of applied physics, 77(8), 1995, pp. 4044-4048
Risultati: 1-16 |