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Results: 1-25 | 26-50 | 51-64
Results: 1-25/64
EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: YOW HK HOUSTON PA BUTTON CC DAVID JPR NG CMS
Citation: Hk. Yow et al., EFFECTS OF HIGH-TEMPERATURE ANNEALING ON THE DEVICE CHARACTERISTICS OF GA0.52IN0.48P GAAS AND AL0.52IN0.48P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(1), 1998, pp. 17-23
ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: LYE BC HOUSTON PA BUTTON CC DAVID JPR
Citation: Bc. Lye et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF HEAVILY-DOPED GAAS-C BASESOF HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 42(1), 1998, pp. 115-120
IMPACT IONIZATION IN ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/
Authors: CHIA CK DAVID JPR REES GJ PLIMMER SA GREY R ROBSON PN
Citation: Ck. Chia et al., IMPACT IONIZATION IN ALXGA1-XAS GAAS SINGLE HETEROSTRUCTURES/, Journal of applied physics, 84(8), 1998, pp. 4363-4369
A SIMPLE-MODEL TO DETERMINE MULTIPLICATION AND NOISE IN AVALANCHE PHOTODIODES
Authors: ONG DS LI KF REES GJ DAVID JPR ROBSON PN
Citation: Ds. Ong et al., A SIMPLE-MODEL TO DETERMINE MULTIPLICATION AND NOISE IN AVALANCHE PHOTODIODES, Journal of applied physics, 83(6), 1998, pp. 3426-3428
A MONTE-CARLO INVESTIGATION OF MULTIPLICATION NOISE IN THIN P(-I-N(+)GAAS AVALANCHE PHOTODIODES())
Authors: ONG DS LI KF REES GJ DUNN GM DAVID JPR ROBSON PN
Citation: Ds. Ong et al., A MONTE-CARLO INVESTIGATION OF MULTIPLICATION NOISE IN THIN P(-I-N(+)GAAS AVALANCHE PHOTODIODES()), I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1804-1810
AVALANCHE MULTIPLICATION IN GAINP GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: FLITCROFT RM DAVID JPR HOUSTON PA BUTTON CC
Citation: Rm. Flitcroft et al., AVALANCHE MULTIPLICATION IN GAINP GAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1207-1212
AVALANCHE MULTIPLICATION AND BREAKDOWN IN GA0.52IN0.48P DIODES
Authors: GHIN R DAVID JPR PLIMMER SA HOPKINSON M REES GJ HERBERT DC WIGHT DR
Citation: R. Ghin et al., AVALANCHE MULTIPLICATION AND BREAKDOWN IN GA0.52IN0.48P DIODES, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2096-2101
AVALANCHE MULTIPLICATION NOISE CHARACTERISTICS IN THIN GAAS P(-I-N(+)DIODES())
Authors: LI KF ONG DS DAVID JPR REES GJ TOZER RC ROBSON PN GREY R
Citation: Kf. Li et al., AVALANCHE MULTIPLICATION NOISE CHARACTERISTICS IN THIN GAAS P(-I-N(+)DIODES()), I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2102-2107
LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES
Authors: LI KF ONG DS DAVID JPR TOZER RC REES GJ ROBSON PN GREY R
Citation: Kf. Li et al., LOW EXCESS NOISE CHARACTERISTICS IN THIN AVALANCHE REGION GAAS DIODES, Electronics Letters, 34(1), 1998, pp. 125-126
MONTE-CARLO ESTIMATION OF AVALANCHE NOISE IN THIN P(-I-N(+) GAAS DIODES())
Authors: ONG DS LI KF REES GJ DAVID JPR ROBSON PN DUNN GM
Citation: Ds. Ong et al., MONTE-CARLO ESTIMATION OF AVALANCHE NOISE IN THIN P(-I-N(+) GAAS DIODES()), Applied physics letters, 72(2), 1998, pp. 232-234
INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS
Authors: CHEN YH WILKINSON CI WOODHEAD J DAVID JPR BUTTON CC ROBSON PN
Citation: Yh. Chen et al., INFLUENCE OF ORDERING ON THE POLARIZATION CHARACTERISTICS OF GAINP VERTICAL-CAVITY SURFACE-EMITTING LASERS, IEEE photonics technology letters, 9(2), 1997, pp. 143-145
INVESTIGATION OF BAND NON-PARABOLICITIES IN STRAIN-BALANCED GAINAS GAALINAS COUPLED QUANTUM-WELLS/
Authors: MARTIN RW MCGOW FJ HOPKINSON M DAVID JPR
Citation: Rw. Martin et al., INVESTIGATION OF BAND NON-PARABOLICITIES IN STRAIN-BALANCED GAINAS GAALINAS COUPLED QUANTUM-WELLS/, Superlattices and microstructures, 22(4), 1997, pp. 517-520
ELECTRICAL AND OPTICAL BISTABILITY IN [111]GAINAS-GAAS PIEZOELECTRIC QUANTUM-WELLS
Authors: WILSON LR MOWBRAY DJ SKOLNICK MS PEGGS DW REES GJ DAVID JPR GREY R HILL G PATE MA
Citation: Lr. Wilson et al., ELECTRICAL AND OPTICAL BISTABILITY IN [111]GAINAS-GAAS PIEZOELECTRIC QUANTUM-WELLS, Superlattices and microstructures, 21(1), 1997, pp. 113-118
SIMULATION OF IMPACT IONIZATION BREAKDOWN IN MESFETS USING MONTE-CARLO METHODS
Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., SIMULATION OF IMPACT IONIZATION BREAKDOWN IN MESFETS USING MONTE-CARLO METHODS, Semiconductor science and technology, 12(9), 1997, pp. 1147-1153
MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN PHOTODETECTORS
Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN PHOTODETECTORS, Semiconductor science and technology, 12(6), 1997, pp. 692-697
MONTE-CARLO SIMULATION OF IMPACT IONIZATION AND CURRENT MULTIPLICATION IN SHORT GAAS P(+)IN(+) DIODES
Authors: DUNN GM REES GJ DAVID JPR PLIMMER SA HERBERT DC
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION AND CURRENT MULTIPLICATION IN SHORT GAAS P(+)IN(+) DIODES, Semiconductor science and technology, 12(1), 1997, pp. 111-120
ELECTRICAL AND OPTICAL BISTABILITY IN INXGA1-XAS-GAAS PIEZOELECTRIC QUANTUM-WELLS
Authors: WILSON LR MOWBRAY DJ SKOLNICK MS ASTRATOV VN PEGGS DW REES GJ DAVID JPR GREY R HILL G PATE MA
Citation: Lr. Wilson et al., ELECTRICAL AND OPTICAL BISTABILITY IN INXGA1-XAS-GAAS PIEZOELECTRIC QUANTUM-WELLS, Physical review. B, Condensed matter, 55(24), 1997, pp. 16045-16048
MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/
Authors: VALTUENA JF IZPURA I SANCHEZROJAS JL MUNOZ E KHOO EA DAVID JPR WOODHEAD J GREY R REES GJ
Citation: Jf. Valtuena et al., MEMORY EFFECTS ON PIEZOELECTRIC INGAAS GAAS MQW PIN DIODES/, Microelectronics, 28(8-10), 1997, pp. 757-765
INCORPORATION OF AS-2 IN INASXP1-X AND ITS APPLICATION TO INASXP1-X INP QUANTUM-WELL STRUCTURES/
Authors: HOPKINSON M DAVID JPR
Citation: M. Hopkinson et Jpr. David, INCORPORATION OF AS-2 IN INASXP1-X AND ITS APPLICATION TO INASXP1-X INP QUANTUM-WELL STRUCTURES/, Journal of crystal growth, 175, 1997, pp. 1033-1038
POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS
Authors: CHEN YH WILKINSON CI WOODHEAD J DAVID JPR BUTTON CC ROBSON PN
Citation: Yh. Chen et al., POLARIZATION CHARACTERISTICS OF VISIBLE VCSELS, Journal of crystal growth, 170(1-4), 1997, pp. 394-398
VISIBLE (683 TO 713 NM) ROOM-TEMPERATURE ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL)
Authors: SALE TE ROBERTS JS WOODHEAD J DAVID JPR ROBSON PN
Citation: Te. Sale et al., VISIBLE (683 TO 713 NM) ROOM-TEMPERATURE ALGAAS VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL), Journal of crystal growth, 170(1-4), 1997, pp. 399-403
OPTICAL-PROPERTIES OF MOVPE GROWN ALXGA1-XAS QUANTUM-WELLS
Authors: ROBERTS JS DAVID JPR CHEN YH SALE TE
Citation: Js. Roberts et al., OPTICAL-PROPERTIES OF MOVPE GROWN ALXGA1-XAS QUANTUM-WELLS, Journal of crystal growth, 170(1-4), 1997, pp. 621-625
IMPACT IONIZATION IN THIN ALXGA1-XAS (X=0.15 AND 0.30) P-I-N-DIODES
Authors: PLIMMER SA DAVID JPR REES GJ GREY R HERBERT DC WIGHT DR HIGGS AW
Citation: Sa. Plimmer et al., IMPACT IONIZATION IN THIN ALXGA1-XAS (X=0.15 AND 0.30) P-I-N-DIODES, Journal of applied physics, 82(3), 1997, pp. 1231-1235
SPATIAL LIMITATIONS TO THE APPLICATION OF THE LUCKY-DRIFT THEORY OF IMPACT IONIZATION
Authors: PLIMMER SA DAVID JPR DUNN GM
Citation: Sa. Plimmer et al., SPATIAL LIMITATIONS TO THE APPLICATION OF THE LUCKY-DRIFT THEORY OF IMPACT IONIZATION, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 659-663
MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN MESFETS
Authors: DUNN GM REES GJ DAVID JPR
Citation: Gm. Dunn et al., MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN MESFETS, Electronics Letters, 33(7), 1997, pp. 639-640
Risultati: 1-25 | 26-50 | 51-64