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Results: 1-25/31
Authors:
DELALAMO JA
EUGSTER CC
HU Q
MELLOCH MR
ROOKS MJ
Citation: Ja. Delalamo et al., ELECTRON WAVE-GUIDE DEVICES, Superlattices and microstructures, 23(1), 1998, pp. 121-137
Authors:
SOMERVILLE MH
BLANCHARD R
DELALAMO JA
DUH G
CHAO PC
Citation: Mh. Somerville et al., A NEW GATE CURRENT EXTRACTION TECHNIQUE FOR MEASUREMENT OF ON-STATE BREAKDOWN VOLTAGE IN HEMTS, IEEE electron device letters, 19(11), 1998, pp. 405-407
Authors:
SOMERVILLE MH
DELALAMO JA
SAUNIER P
Citation: Mh. Somerville et al., OFF-STATE BREAKDOWN IN POWER PHEMTS - THE IMPACT OF THE SOURCE, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1883-1889
Authors:
ERNST AN
SOMERVILLE MH
DELALAMO JA
Citation: An. Ernst et al., A NEW Z(11) IMPEDANCE TECHNIQUE TO EXTRACT MOBILITY AND SHEET CARRIERCONCENTRATION IN HFETS AND MESFETS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 9-13
Authors:
ERNST AN
SOMERVILLE MH
DELALAMO JA
Citation: An. Ernst et al., DYNAMICS OF THE KINK EFFECT IN INALAS INGAAS HEMTS/, IEEE electron device letters, 18(12), 1997, pp. 613-615
Authors:
SOMERVILLE MH
DELALAMO JA
HOKE W
Citation: Mh. Somerville et al., DIRECT CORRELATION BETWEEN IMPACT IONIZATION AND THE KINK EFFECT IN INALAS INGAAS HEMTS/, IEEE electron device letters, 17(10), 1996, pp. 473-475
Authors:
SINN MT
DELALAMO JA
BENNETT BR
HABERMAN K
CELII FG
Citation: Mt. Sinn et al., CHARACTERIZATION OF SURFACE-ROUGHNESS ANISOTROPY ON MISMATCHED INALASINP HETEROSTRUCTURES/, Journal of electronic materials, 25(2), 1996, pp. 313-319
Authors:
GREENBERG DR
DELALAMO JA
Citation: Dr. Greenberg et Ja. Delalamo, NONLINEAR SOURCE AND DRAIN RESISTANCE IN RECESSED-GATE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1304-1306
Authors:
DELALAMO JA
EUGSTER CC
Citation: Ja. Delalamo et Cc. Eugster, DUAL ELECTRON WAVE-GUIDE DEVICES - THE QUEST FOR ELECTRON DIRECTIONALCOUPLING, JPN J A P 1, 34(8B), 1995, pp. 4439-4445
Authors:
BURSTEIN L
SHAPIRA Y
BENNETT BR
DELALAMO JA
Citation: L. Burstein et al., SURFACE PHOTOVOLTAGE SPECTROSCOPY OF INXAL1-XAS EPILAYERS, Journal of applied physics, 78(12), 1995, pp. 7163-7169
Authors:
GREENBERG DR
DELALAMO JA
BHAT R
Citation: Dr. Greenberg et al., IMPACT IONIZATION AND TRANSPORT IN THE INALAS N(+)-INP HFET/, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1574-1582
Authors:
BERTHOLD G
ZANONI E
CANALI C
PAVESI M
PECCHINI M
MANFREDI M
BAHL SR
DELALAMO JA
Citation: G. Berthold et al., IMPACT IONIZATION AND LIGHT-EMISSION IN INALAS INGAAS HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS/, I.E.E.E. transactions on electron devices, 42(4), 1995, pp. 752-759
Authors:
BAHL SR
DELALAMO JA
DICKMANN J
SCHILDBERG S
Citation: Sr. Bahl et al., OFF-STATE BREAKDOWN IN INALAS INGAAS MODFETS, I.E.E.E. transactions on electron devices, 42(1), 1995, pp. 15-22
Authors:
WYSS RA
EUGSTER CC
DELALAMO JA
HU Q
ROOKS MJ
MELLOCH MR
Citation: Ra. Wyss et al., FAR-INFRARED RADIATION-INDUCED THERMOPOWER IN A QUANTUM POINT-CONTACT, Applied physics letters, 66(9), 1995, pp. 1144-1146
Authors:
MOOLJI AA
BAHL SR
DELALAMO JA
Citation: Aa. Moolji et al., IMPACT IONIZATION IN INALAS INGAAS HFETS, IEEE electron device letters, 15(8), 1994, pp. 313-315
Authors:
BENNETT BR
DELALAMO JA
SINN MT
PEIRO F
CORNET A
ASPNES DE
Citation: Br. Bennett et al., ORIGIN OF OPTICAL ANISOTROPY IN STRAINED INXGA1-XAS INP AND INYAL1-YAS/INP HETEROSTRUCTURES/, Journal of electronic materials, 23(4), 1994, pp. 423-429
Authors:
GREENBERG DR
DELALAMO JA
Citation: Dr. Greenberg et Ja. Delalamo, VELOCITY SATURATION IN THE EXTRINSIC DEVICE - A FUNDAMENTAL LIMIT IN HFETS, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1334-1339
Authors:
BAHL SR
DELALAMO JA
Citation: Sr. Bahl et Ja. Delalamo, PHYSICS OF BREAKDOWN IN INALAS N(+)-INGAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS/, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2268-2275
Authors:
GAN CH
DELALAMO JA
BENNETT BR
MEYERSON BS
CRABBE EF
SODINI CG
REIF LR
Citation: Ch. Gan et al., SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2430-2439
Authors:
SOMERVILLE MH
GREENBERG DR
DELALAMO JA
Citation: Mh. Somerville et al., TEMPERATURE AND CARRIER DENSITY-DEPENDENCE OF MOBILITY IN A HEAVILY-DOPED QUANTUM-WELL, Applied physics letters, 64(24), 1994, pp. 3276-3278
Authors:
EUGSTER CC
DELALAMO JA
ROOKS MJ
MELLOCH MR
Citation: Cc. Eugster et al., ONE-DIMENSIONAL TO ONE-DIMENSIONAL TUNNELING BETWEEN ELECTRON WAVE-GUIDES, Applied physics letters, 64(23), 1994, pp. 3157-3159
Authors:
EUGSTER CC
DELALAMO JA
MELLOCH MR
ROOKS MJ
Citation: Cc. Eugster et al., 1D-TO-2D TUNNELING IN ELECTRON WAVE-GUIDES, Physical review. B, Condensed matter, 48(20), 1993, pp. 15057-15067
Authors:
BENNETT BR
DELALAMO JA
Citation: Br. Bennett et Ja. Delalamo, OPTIMAL EPILAYER THICKNESS FOR INXGA1-XAS AND INYAL1-YAS COMPOSITION MEASUREMENT BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of applied physics, 73(12), 1993, pp. 8304-8308
Authors:
BAHL SR
DELALAMO JA
Citation: Sr. Bahl et Ja. Delalamo, A NEW DRAIN-CURRENT INJECTION TECHNIQUE FOR THE MEASUREMENT OF OFF-STATE BREAKDOWN VOLTAGE IN FETS, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1558-1560
Authors:
EUGSTER CC
NUYTKENS PR
DELALAMO JA
Citation: Cc. Eugster et al., A NOVEL ANALOG-TO-DIGITAL CONVERSION ARCHITECTURE USING ELECTRON WAVE-GUIDES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1910-1916