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Results:
1-8
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Results: 8
Authors:
DEMURCIA M
Citation: M. Demurcia, DIELECTRICS ARTICLE, Solid state technology, 40(4), 1997, pp. 17-17
Authors:
DUTISSEUIL E
SIBILLE A
PALMIER JF
THIERRYMIEG V
DEMURCIA M
RICHARD E
Citation: E. Dutisseuil et al., NONEQUILIBRIUM THERMAL NOISE IN GAAS GAALAS SUPERLATTICE MINIBAND/, Journal of applied physics, 80(12), 1996, pp. 7160-7162
Authors:
DEMURCIA M
RICHARD E
LLINARES P
PASCAL F
VANBREMEERSCH J
Citation: M. Demurcia et al., CARRIER CONCENTRATION EFFECTS ON HOT-ELECTRONS NOISE IN N(+)NN(+) AL0.25GA0.75AS DEVICES, Electronics Letters, 32(2), 1996, pp. 137-138
Authors:
GASQUET D
BARBEROUSSE F
DEMURCIA M
DERAEDT W
CLAEYS C
Citation: D. Gasquet et al., DETERMINATION OF PHEMTS MICROWAVE NOISE PARAMETERS ONLY BY MEANS OF THE SMALL-SIGNAL EQUIVALENT-CIRCUIT AND EXPERIMENTAL COMPARISONS, Journal de physique. III, 5(5), 1995, pp. 495-507
Authors:
DEMURCIA M
RICHARD E
PERRAUDIN JM
BOYER A
BENVENUTI A
ZIMMERMANN J
Citation: M. Demurcia et al., DETECTION AND EVALUATION OF SELF-HEATING EFFECTS IN N(-XAS DEVICES BYNOISE TEMPERATURE-MEASUREMENTS()NN(+) ALXGA1), Semiconductor science and technology, 10(4), 1995, pp. 515-522
Authors:
DEMURCIA M
RICHARD E
GASQUET D
DUBUC JP
VANBREMEERSCH J
ZIMMERMANN J
Citation: M. Demurcia et al., HIGH-FREQUENCY NOISE AND DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN BULK AL0.25GA0.75AS, Solid-state electronics, 37(8), 1994, pp. 1477-1483
Authors:
PASCAL F
DEMURCIA M
LECOY G
VANDAMME LKJ
Citation: F. Pascal et al., 1 F AND G-R NOISE IN ALGAAS EPITAXIAL LAYERS, Solid-state electronics, 37(8), 1994, pp. 1503-1508
INFLUENCE OF AL CONTENT-X ON HOT-ELECTRON NOISE IN ALX GA1-XAS N- COMPARISON WITH GAAS(NN+ DEVICES )
Authors:
DEMURCIA M
RICHARD E
VANBREMEERSCH J
ZIMMERMANN J
Citation: M. Demurcia et al., INFLUENCE OF AL CONTENT-X ON HOT-ELECTRON NOISE IN ALX GA1-XAS N- COMPARISON WITH GAAS(NN+ DEVICES ), I.E.E.E. transactions on electron devices, 41(11), 1994, pp. 2082-2086
Risultati:
1-8
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