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Results: 1-25 | 26-29
Results: 1-25/29
ROLE OF TE ON THE MORPHOLOGY OF INAS SELF-ASSEMBLED ISLANDS
Authors: SAFAR GAM RODRIGUES WN MOREIRA MVB DEOLIVEIRA AG NEVES BRA VILELA JM ANDRADE MS ROCHET F
Citation: Gam. Safar et al., ROLE OF TE ON THE MORPHOLOGY OF INAS SELF-ASSEMBLED ISLANDS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2633-2638
TEMPERATURE TUNING OF EXCITON-PHOTON COUPLING IN A MICROCAVITY GROWN ON A (311)A GAAS SUBSTRATE
Authors: MATINAGA FM CURY LA VALADARES EC MOREIRA MVB RODRIGUES WN DEOLIVEIRA AG VILELA JMC ANDRADE MS SLUSS JA
Citation: Fm. Matinaga et al., TEMPERATURE TUNING OF EXCITON-PHOTON COUPLING IN A MICROCAVITY GROWN ON A (311)A GAAS SUBSTRATE, Superlattices and microstructures, 23(1), 1998, pp. 181-186
MEDIAN STERNOTOMY FOR THE RESECTION OF BILATERAL PULMONARY METASTASESIN CHILDREN
Authors: DEOLIVEIRA AG NETO LS EPELMAN S
Citation: Ag. Deoliveira et al., MEDIAN STERNOTOMY FOR THE RESECTION OF BILATERAL PULMONARY METASTASESIN CHILDREN, Pediatric surgery international, 13(8), 1998, pp. 560-563
OPTICAL-ABSORPTION AND BAND-GAP SHIFT OF N-DOPED ALXGA1-XAS ALLOYS GROWN BY MBE
Authors: DASILVA AF PERSSON C BERGGREN KF PEPE I ALVES AS DEOLIVEIRA AG
Citation: Af. Dasilva et al., OPTICAL-ABSORPTION AND BAND-GAP SHIFT OF N-DOPED ALXGA1-XAS ALLOYS GROWN BY MBE, Microelectronic engineering, 43-4, 1998, pp. 423-429
ELECTRON-CONCENTRATION DEPENDENCE OF THE COULOMB GAP IN ALGAAS-SI
Authors: MOREIRA HS SAMPAIO JF ALVES ES DEOLIVEIRA AG
Citation: Hs. Moreira et al., ELECTRON-CONCENTRATION DEPENDENCE OF THE COULOMB GAP IN ALGAAS-SI, Physical review letters, 80(8), 1998, pp. 1706-1709
THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES
Authors: RUBINGER RM BEZERRA JC CHAGAS EF GONZALEZ JC RODRIGUES WN RIBEIRO GM MOREIRA MVB DEOLIVEIRA AG
Citation: Rm. Rubinger et al., THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES, Journal of applied physics, 84(7), 1998, pp. 3764-3769
COHERENT-TO-INCOHERENT TRANSITION IN SURFACTANT-MEDIATED GROWTH OF INAS QUANTUM DOTS
Authors: NEVES BRA ANDRADE MS RODRIGUES WN SAFAR GAM MOREIRA MVB DEOLIVEIRA AG
Citation: Bra. Neves et al., COHERENT-TO-INCOHERENT TRANSITION IN SURFACTANT-MEDIATED GROWTH OF INAS QUANTUM DOTS, Applied physics letters, 72(14), 1998, pp. 1712-1714
ELECTRICAL-TRANSPORT PROPERTIES OF SILICON DELTA-DOPED AL0.30GA0.70ASSAMPLES SHOWING SUPPRESSION OF THE DX CENTER FEATURES
Authors: CORREA JA DEOLIVEIRA AG DASILVA MIN RIBEIRO GM SAMPAIO JF
Citation: Ja. Correa et al., ELECTRICAL-TRANSPORT PROPERTIES OF SILICON DELTA-DOPED AL0.30GA0.70ASSAMPLES SHOWING SUPPRESSION OF THE DX CENTER FEATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 870-875
WILMS-TUMOR IN A PRENATALLY DIAGNOSED MULTICYSTIC KIDNEY
Authors: DEOLIVEIRA AG CARVALHO MH SBRAGIANETO L MIRANDA ML BUSTORFFSILVA JM DEOLIVEIRA ER
Citation: Ag. Deoliveira et al., WILMS-TUMOR IN A PRENATALLY DIAGNOSED MULTICYSTIC KIDNEY, The Journal of urology, 158(5), 1997, pp. 1926-1927
EFFECT OF HEXADECYLTRIMETHYLAMMONIUM BROMIDE-BASED MICROEMULSIONS ON THE RATE OF DECOMPOSITION OF THE BETA-LACTAM ANTIBIOTIC CEPHACLOR
Authors: DEOLIVEIRA AG SCARPA MV CHAIMOVICH H
Citation: Ag. Deoliveira et al., EFFECT OF HEXADECYLTRIMETHYLAMMONIUM BROMIDE-BASED MICROEMULSIONS ON THE RATE OF DECOMPOSITION OF THE BETA-LACTAM ANTIBIOTIC CEPHACLOR, Journal of pharmaceutical sciences, 86(5), 1997, pp. 616-620
THE EL2-LIKE METASTABLE DEFECT AND THE N-TYPE TO P-TYPE TRANSITION INSILICON PLANAR-DOPED GAAS
Authors: DASILVA MIN DEOLIVEIRA AG RIBEIRO GM RUBINGER RM CORREA JA MOREIRA MVB
Citation: Min. Dasilva et al., THE EL2-LIKE METASTABLE DEFECT AND THE N-TYPE TO P-TYPE TRANSITION INSILICON PLANAR-DOPED GAAS, Journal of applied physics, 82(7), 1997, pp. 3346-3350
EFFECT OF TE AS A SURFACTANT ON THE OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS
Authors: SAFAR GAM RODRIGUES WN CURY LA CHACHAM H MOREIRA MVB FREIRE SLS DEOLIVEIRA AG
Citation: Gam. Safar et al., EFFECT OF TE AS A SURFACTANT ON THE OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS, Applied physics letters, 71(4), 1997, pp. 521-523
QUASI-PERIODIC MICROFACETS ON THE SURFACE OF ALGAAS GAAS QUANTUM-WELLSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON (311)A HIGH-INDEX SUBSTRATES/
Authors: FREIRE SLS CURY LA MATINAGA FM VALADARES EC MOREIRA MVB DEOLIVEIRA AG ALVES AR VILELA JMC ANDRADE MS LIMA TM SLUSS JA
Citation: Sls. Freire et al., QUASI-PERIODIC MICROFACETS ON THE SURFACE OF ALGAAS GAAS QUANTUM-WELLSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON (311)A HIGH-INDEX SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3555-3558
PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH SHORT-PERIOD SUPERLATTICE CHANNELS RATHER THAN ALLOY CHANNELS
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH SHORT-PERIOD SUPERLATTICE CHANNELS RATHER THAN ALLOY CHANNELS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3350-3356
EVIDENCE FOR THE COEXISTENCE OF 2-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON GASES IN THE EMITTER OF DOUBLE-BARRIER DEVICES
Authors: NEVES BRA SAMPAIO JF ALVES ES MOREIRA MVB DEOLIVEIRA AG
Citation: Bra. Neves et al., EVIDENCE FOR THE COEXISTENCE OF 2-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON GASES IN THE EMITTER OF DOUBLE-BARRIER DEVICES, Superlattices and microstructures, 20(2), 1996, pp. 181-186
TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES
Authors: CORREA JA DEOLIVEIRA AG DASILVA MIN MOREIRA MVB RIBEIRO GM CHACHAM H
Citation: Ja. Correa et al., TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES, Solid state communications, 98(12), 1996, pp. 1063-1068
REDUCTION OF THE EFFECTS OF INGAAS ALLOY DISORDER BY USING INAS GAAS SUPERLATTICES AS THE CONDUCTION CHANNEL IN MODULATION-DOPED HETEROSTRUCTURES/
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., REDUCTION OF THE EFFECTS OF INGAAS ALLOY DISORDER BY USING INAS GAAS SUPERLATTICES AS THE CONDUCTION CHANNEL IN MODULATION-DOPED HETEROSTRUCTURES/, Solid state communications, 97(1), 1996, pp. 11-15
SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES
Authors: NEVES BRA ALVES ES SAMPAIO JF DEOLIVEIRA AG MOREIRA MVB
Citation: Bra. Neves et al., SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES, Applied physics letters, 69(8), 1996, pp. 1125-1127
HIGHER MOBILITY OF CHARGE-CARRIERS IN INAS GAAS SUPERLATTICES THROUGHTHE ELIMINATION OF INGAAS ALLOY DISORDERS ON GAAS/
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., HIGHER MOBILITY OF CHARGE-CARRIERS IN INAS GAAS SUPERLATTICES THROUGHTHE ELIMINATION OF INGAAS ALLOY DISORDERS ON GAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2064-2068
MIGRATION OF SILICON ATOMS IN PLANAR-DOPED GAAS ALGAAS MODULATION-DOPED FLUID EFFECT TRANSISTOR HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: CARVALHO ATG DEOLIVEIRA AG ALVES ES MOREIRA MVB
Citation: Atg. Carvalho et al., MIGRATION OF SILICON ATOMS IN PLANAR-DOPED GAAS ALGAAS MODULATION-DOPED FLUID EFFECT TRANSISTOR HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 149-155
PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING (INAS)(M)(GAAS)(N) SUPERLATTICE CHANNELS
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING (INAS)(M)(GAAS)(N) SUPERLATTICE CHANNELS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 391-395
DX-CENTER ENERGY-LEVEL DEPENDENCE ON SILICON DOPING CONCENTRATION IN AL0.3GA0.7AS
Authors: MEDEIROSRIBEIRO G DEOLIVEIRA AG RIBEIRO GM SOARES DAW
Citation: G. Medeirosribeiro et al., DX-CENTER ENERGY-LEVEL DEPENDENCE ON SILICON DOPING CONCENTRATION IN AL0.3GA0.7AS, Journal of electronic materials, 24(7), 1995, pp. 907-912
PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER
Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CORREA JA DASILVA MIN CHACHAM H
Citation: Ag. Deoliveira et al., PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER, Journal of applied physics, 78(4), 1995, pp. 2659-2665
USE OF THE DX CENTER AS A PROBE TO STUDY THE PROFILE OF SI IMPURITIESIN PLANAR-DOPED GAAS
Authors: BEZERRA JC DEOLIVEIRA AG MAZZONI MSC CHACHAM H
Citation: Jc. Bezerra et al., USE OF THE DX CENTER AS A PROBE TO STUDY THE PROFILE OF SI IMPURITIESIN PLANAR-DOPED GAAS, Journal of applied physics, 77(7), 1995, pp. 3283-3287
OBSERVATION OF THE NEGATIVE AND POSITIVE PERSISTENT PHOTOCONDUCTIVITYPHENOMENA IN SILICON PLANAR-DOPED GAAS
Authors: DASILVA MIN CORREA JA BEZERRA JC DEOLIVEIRA AG
Citation: Min. Dasilva et al., OBSERVATION OF THE NEGATIVE AND POSITIVE PERSISTENT PHOTOCONDUCTIVITYPHENOMENA IN SILICON PLANAR-DOPED GAAS, Solid state communications, 92(9), 1994, pp. 745-749
Risultati: 1-25 | 26-29